In Situ Studies of Intercritically Austempered Ductile Iron Using Neutron Diffraction

2011 ◽  
Vol 43 (5) ◽  
pp. 1468-1476 ◽  
Author(s):  
Alan P. Druschitz ◽  
Ricardo E. Aristizabal ◽  
Edward Druschitz ◽  
C. R. Hubbard ◽  
Thomas R. Watkins ◽  
...  
Materials ◽  
2020 ◽  
Vol 13 (22) ◽  
pp. 5266
Author(s):  
Martin Landesberger ◽  
Robert Koos ◽  
Michael Hofmann ◽  
Xiaohu Li ◽  
Torben Boll ◽  
...  

The phase transformation to ausferrite during austempered ductile iron (ADI) heat treatment can be significantly influenced by the alloying element Mo. Utilizing neutron diffraction, the phase transformation from austenite to ausferrite was monitored in-situ during the heat treatment. In addition to the phase volume fractions, the carbon enrichment of retained austenite was investigated. The results from neutron diffraction were compared to the macroscopic length change from dilatometer measurements. They show that the dilatometer data are only of limited use for the investigation of ausferrite formation. However, they allow deriving the time of maximum carbon accumulation in the retained austenite. In addition, the transformation of austenite during ausferritization was investigated using metallographic methods. Finally, the distribution of the alloying elements in the vicinity of the austenite/ferrite interface zone was shown by atom probe tomography (APT) measurements. C and Mn were enriched within the interface, while Si concentration was reduced. The Mo concentration in ferrite, interface and austentite stayed at the same level. The delay of austenite decay during Stage II reaction caused by Mo was studied in detail at 400 °C for the initial material as well as for 0.25 mass % and 0.50 mass % Mo additions.


2020 ◽  
Vol 56 (8) ◽  
pp. 5296-5306
Author(s):  
Xiaohu Li ◽  
Sergio Soria ◽  
Weimin Gan ◽  
Michael Hofmann ◽  
Michael Schulz ◽  
...  

AbstractThe content of strain-induced martensite in austempered ductile iron has been quantitatively determined using three different kinds of neutron methods: (1) high-resolution powder diffraction with subsequent standard Rietveld refinement, (2) phase quantification using pole figure measurements and (3) Bragg edge neutron transmission. The accuracy and scope of applications of these neutron diffraction and imaging techniques for phase quantification have been compared and discussed in detail. Combination of these methods has been confirmed as effective for dealing with problems like peak overlap in multi-phase materials and texture formation after plastic deformation. Further, the results highlight the potential of using single peak pole figure data for quantitative phase analysis with high accuracy.


2015 ◽  
Vol 47 (2) ◽  
pp. 661-671 ◽  
Author(s):  
Patrick Saal ◽  
Leopold Meier ◽  
Xiaohu Li ◽  
Michael Hofmann ◽  
Markus Hoelzel ◽  
...  

2006 ◽  
Vol 128 (40) ◽  
pp. 13161-13174 ◽  
Author(s):  
Ronan Le Toquin ◽  
Werner Paulus ◽  
Alain Cousson ◽  
Carmelo Prestipino ◽  
Carlo Lamberti

2013 ◽  
Vol 85 ◽  
pp. 124-133 ◽  
Author(s):  
Leopold Meier ◽  
Michael Hofmann ◽  
Patrick Saal ◽  
Wolfram Volk ◽  
Hartmut Hoffmann

2001 ◽  
Vol 319-321 ◽  
pp. 531-534 ◽  
Author(s):  
P.Q. Dai ◽  
Z.R. He ◽  
C.M. Zheng ◽  
Z.Y. Mao

1996 ◽  
Vol 27 (4) ◽  
pp. 923-928 ◽  
Author(s):  
C. S. Choi ◽  
W. Sharpe ◽  
J. Barker ◽  
R. J. Fields

2021 ◽  
Vol 185 ◽  
pp. 109437
Author(s):  
H. Krawiec ◽  
V. Vignal ◽  
J. Lelito ◽  
A. Krystianiak ◽  
P. Ozga

Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.


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