Estimation of Phonon and Carrier Thermal Conductivities for Bulk Thermoelectric Materials Using Transport Properties

2016 ◽  
Vol 46 (5) ◽  
pp. 2752-2764 ◽  
Author(s):  
Mioko Otsuka ◽  
Ryoei Homma ◽  
Yasuhiro Hasegawa
Keyword(s):  
Transport Properties ◽  
Thermoelectric Materials ◽  
Thermal Conductivities

Enhancing the thermoelectric performance of Sn0.5Ge0.5Te via doping with Sb/Bi and alloying with Cu2Te: Optimization of transport properties and thermal conductivities

2020 ◽  
Vol 49 (18) ◽  
pp. 6135-6144
Author(s):  
Shaochang Song ◽  
Chun-Wan Timothy Lo ◽  
Masoud Aminzare ◽  
Yu-Chih Tseng ◽  
Suneesh Meledath Valiyaveettil ◽  
...  
Keyword(s):  
Transport Properties ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Thermoelectric Performance ◽  
Thermal Conductivities

SnTe-based thermoelectric materials are studied as potential substitutes for PbTe. Ge and Bi substitutions combined with the Cu2Te alloying can significantly improve thermoelectric properties of SnTe as shown for (Sn0.5Ge0.5)0.91Bi0.06Te(Cu2Te)0.05.

Effect of Electron-Phonon Coupling on Transport Properties of Monolayers of ZrS2, BiI3 and PbI2: A thermoelectric Perspective

2021 ◽  
Author(s):  
Gautam Sharma ◽  
Vineet Kumar Pandey ◽  
Shouvik Datta ◽  
Prasenjit Ghosh
Keyword(s):  
Relaxation Time ◽  
Band Structure ◽  
Transport Properties ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Waste Heat ◽  
Transport Coefficients ◽  
Electrical Energy ◽  
Phonon Coupling ◽  
Electron Phonon Coupling

Thermoelectric materials are used for conversion of waste heat to electrical energy. The transport coefficients that determine their thermoelectric properties depend on the band structure and the relaxation time of...

Thermoelectric Properties of K2Bi8−xSbxSe13Solid Solutions and Se Doping

2001 ◽  
Vol 691 ◽  
Author(s):  
Theodora Kyratsi ◽  
Jeffrey S. Dyck ◽  
Wei Chen ◽  
Duck-Young Chung ◽  
Ctirad Uher ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Charge Transport ◽  
Transport Properties ◽  
Thermoelectric Properties ◽  
Solid Solutions ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Se Doping ◽  
Mass Fluctuation ◽  
Thermal Conductivities

ABSTRACTOur efforts to improve the thermoelectric properties of β-K2Bi8Se13, led to systematic studies of solid solutions of the type β-K2Bi8−xSbxSe13. The charge transport properties and thermal conductivities were studied for selected members of the series. Lattice thermal conductivity decreases due to the mass fluctuation generated in the lattice by the mixed occupation of Sb and Bi atoms. Se excess as a dopant was found to increase the figure-of merit of the solid solutions.

scholarly journals Spin-Orbit Coupling Effects on Transport Properties of Electronic Lieb Lattice in the Presence of Magnetic Field

2021 ◽  
Author(s):  
Elham Sadeghi ◽  
Hamed Rezania
Keyword(s):  
Magnetic Field ◽  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Lieb Lattice ◽  
Thermal Conductivities

Abstract In this paper, the transport properties of a two-dimensional Lieb lattice that is a line-centered square lattice are investigated in the presence of magnetic field and spin-orbit coupling. Specially, we address the temperature dependence of electrical and thermal conductivities as well as Seebeck coefficient due to spin-orbit interaction. We have exploited Green’s function approach in order to study thermoelectric and transport properties of Lieb lattice in the context of Kane-Mele model Hamiltonian. The results for Seebeck coefficient show the sign of thermopower is positive in the presence of spin-orbit coupling. Also the temperature dependence of transport properties indicates that the increase of spin-orbit coupling leads to decrease thermal conductivity however the decrease of gap 1 parameter causes the reduction of thermal conductivity. There is a peak in temperature dependence of thermal conductivity for all values of magnetic fields and spin-orbit coupling strengths. Both electrical and thermal conductivities increase with increasing the temperature at low amounts of temperature due to the increasing of transition rate of charge carriers and excitation of them to the conduction bands. Also we have studied the temperature dependence of spin susceptibility of Lieb monolayer due to both spin orbit coupling and magnetic field factors in details.

scholarly journals Metal phosphides as potential thermoelectric materials

2017 ◽  
Vol 5 (47) ◽  
pp. 12441-12456 ◽  
Author(s):  
Jan-Hendrik Pöhls ◽  
Alireza Faghaninia ◽  
Guido Petretto ◽  
Umut Aydemir ◽  
Francesco Ricci ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
Thermoelectric Performance ◽  
Band Structures ◽  
Electronic Band ◽  
Metal Phosphides ◽  
Electronic Band Structures ◽  
Thermal Conductivities

Metal phosphides are predicted to have high thermoelectric performance due to enhanced electronic band structures and low thermal conductivities.

scholarly journals Substitution Versus Full-Heusler Segregation in TiCoSb

Metals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 935 ◽  
Author(s):  
Maryana Asaad ◽  
Jim Buckman ◽  
Jan-Willem Bos
Keyword(s):  
Powder Metallurgy ◽  
Power Factor ◽  
Thermoelectric Materials ◽  
Room Temperature ◽  
The Difference ◽  
P Type ◽  
Full Heusler ◽  
Thermal Conductivities

Half-Heuslers (HHs) are promising thermoelectric materials with great compositional flexibility. Here, we extend work on the p-type doping of TiCoSb using abundant elements. Ti0.7V0.3Co0.85Fe0.15Sb0.7Sn0.3 samples with nominal 17.85 p-type electron count were investigated. Samples prepared using powder metallurgy have negative Seebeck values, S ≤ −120 µV K−1, while arc-melted compositions are compensated semiconductors with S = −45 to +30 µV K−1. The difference in thermoelectric response is caused by variations in the degree of segregation of V(Co0.6Fe0.4)2Sn full-Heusler and Sn phases, which selectively absorb V, Fe, and Sn. The segregated microstructure leads to reduced lattice thermal conductivities, κlat = 4.5−7 W m−1 K−1 near room temperature. The largest power factor, S2/ρ = 0.4 mW m−1 K−2 and ZT = 0.06, is observed for the n-type samples at 800 K. This works extends knowledge regarding suitable p-type dopants for TiCoSb.

Transport properties of thermoelectric materials for coolers

1983 ◽  
Vol 12 (2) ◽  
pp. 247-265 ◽  
Author(s):  
A. Sher ◽  
M. Shiloh ◽  
D. Ilzycer ◽  
D. Eger
Keyword(s):  
Transport Properties ◽  
Thermoelectric Materials

scholarly journals Low-temperature transport properties of n-type layered homologous compounds Bi8−xSbxSe7

2020 ◽  
Vol 8 (40) ◽  
pp. 14037-14048
Author(s):  
Pavan Kumar-Ventrapati ◽  
Shantanu Misra ◽  
Gaëlle Delaizir ◽  
Anne Dauscher ◽  
Bertrand Lenoir ◽  
...  
Keyword(s):  
Low Temperature ◽  
Transport Properties ◽  
Thermoelectric Materials ◽  
Room Temperature ◽  
Parent Compound ◽  
New Class ◽  
Highly Efficient ◽  
Homologous Compounds

The n-type chalcogenide Bi8Se7 is the parent compound of a new class of highly-efficient thermoelectric materials for near-room-temperature thermoelectric applications.

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