Enhancing the thermoelectric performance of Sn0.5Ge0.5Te via doping with Sb/Bi and alloying with Cu2Te: Optimization of transport properties and thermal conductivities

2020 ◽  
Vol 49 (18) ◽  
pp. 6135-6144
Author(s):  
Shaochang Song ◽  
Chun-Wan Timothy Lo ◽  
Masoud Aminzare ◽  
Yu-Chih Tseng ◽  
Suneesh Meledath Valiyaveettil ◽  
...  
Keyword(s):  
Transport Properties ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Thermoelectric Performance ◽  
Thermal Conductivities

SnTe-based thermoelectric materials are studied as potential substitutes for PbTe. Ge and Bi substitutions combined with the Cu2Te alloying can significantly improve thermoelectric properties of SnTe as shown for (Sn0.5Ge0.5)0.91Bi0.06Te(Cu2Te)0.05.

Effect of Electron-Phonon Coupling on Transport Properties of Monolayers of ZrS2, BiI3 and PbI2: A thermoelectric Perspective

2021 ◽  
Author(s):  
Gautam Sharma ◽  
Vineet Kumar Pandey ◽  
Shouvik Datta ◽  
Prasenjit Ghosh
Keyword(s):  
Relaxation Time ◽  
Band Structure ◽  
Transport Properties ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Waste Heat ◽  
Transport Coefficients ◽  
Electrical Energy ◽  
Phonon Coupling ◽  
Electron Phonon Coupling

Thermoelectric materials are used for conversion of waste heat to electrical energy. The transport coefficients that determine their thermoelectric properties depend on the band structure and the relaxation time of...

Effects of Nb doping on thermoelectric properties of Zn4Sb3 at high temperatures

2009 ◽  
Vol 24 (2) ◽  
pp. 430-435 ◽  
Author(s):  
D. Li ◽  
H.H. Hng ◽  
J. Ma ◽  
X.Y. Qin
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperatures ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Temperature Range ◽  
A Value ◽  
Nb Doping ◽  
Thermal Conductivities

The thermoelectric properties of Nb-doped Zn4Sb3 compounds, (Zn1–xNbx)4Sb3 (x = 0, 0.005, and 0.01), were investigated at temperatures ranging from 300 to 685 K. The results showed that by substituting Zn with Nb, the thermal conductivities of all the Nb-doped compounds were lower than that of the pristine β-Zn4Sb3. Among the compounds studied, the lightly substituted (Zn0.995Nb0.005)4Sb3 compound exhibited the best thermoelectric performance due to the improvement in both its electrical resistivity and thermal conductivity. Its figure of merit, ZT, was greater than the undoped Zn4Sb3 compound for the temperature range investigated. In particular, the ZT of (Zn0.995Nb0.005)4Sb3 reached a value of 1.1 at 680 K, which was 69% greater than that of the undoped Zn4Sb3 obtained in this study.

Thermoelectric Properties of K2Bi8−xSbxSe13Solid Solutions and Se Doping

2001 ◽  
Vol 691 ◽  
Author(s):  
Theodora Kyratsi ◽  
Jeffrey S. Dyck ◽  
Wei Chen ◽  
Duck-Young Chung ◽  
Ctirad Uher ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Charge Transport ◽  
Transport Properties ◽  
Thermoelectric Properties ◽  
Solid Solutions ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Se Doping ◽  
Mass Fluctuation ◽  
Thermal Conductivities

ABSTRACTOur efforts to improve the thermoelectric properties of β-K2Bi8Se13, led to systematic studies of solid solutions of the type β-K2Bi8−xSbxSe13. The charge transport properties and thermal conductivities were studied for selected members of the series. Lattice thermal conductivity decreases due to the mass fluctuation generated in the lattice by the mixed occupation of Sb and Bi atoms. Se excess as a dopant was found to increase the figure-of merit of the solid solutions.

scholarly journals Metal phosphides as potential thermoelectric materials

2017 ◽  
Vol 5 (47) ◽  
pp. 12441-12456 ◽  
Author(s):  
Jan-Hendrik Pöhls ◽  
Alireza Faghaninia ◽  
Guido Petretto ◽  
Umut Aydemir ◽  
Francesco Ricci ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
Thermoelectric Performance ◽  
Band Structures ◽  
Electronic Band ◽  
Metal Phosphides ◽  
Electronic Band Structures ◽  
Thermal Conductivities

Metal phosphides are predicted to have high thermoelectric performance due to enhanced electronic band structures and low thermal conductivities.

Theoretical Considerations for Finding New Thermoelectric Materials

2001 ◽  
Vol 691 ◽  
Author(s):  
David J. Singh
Keyword(s):  
Transport Properties ◽  
Thermoelectric Materials ◽  
First Principles ◽  
Thermoelectric Performance ◽  
First Principles Calculations ◽  
Theoretical Considerations

ABSTRACTThis paper reviews the connections between the transport properties underlying the thermoelectric performance of a material and microscopic quantities, particularly as they may be obtained from first principles calculations. These are illustrated using examples from work on skutterudites. The results are used to suggest yet to be explored avenues for achieving higher thermoelectric performance within this class of materials.

Enhanced thermoelectric performance of higher manganese silicides by shock-induced high-density dislocations

2019 ◽  
Vol 7 (7) ◽  
pp. 3384-3390 ◽  
Author(s):  
Zhipeng Gao ◽  
Zhengwei Xiong ◽  
Jun Li ◽  
Chengjia Lu ◽  
Ganghua Zhang ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Shock Compression ◽  
Thermoelectric Materials ◽  
High Density ◽  
Thermoelectric Performance ◽  
Higher Manganese Silicides ◽  
Novel Method

The shock-compression is a novel method to generate high-density dislocations in the thermoelectric materials and to enhance their thermoelectric properties.

Electrical and thermal transport properties of Pb1−xSnxSe solid solution thermoelectric materials

2015 ◽  
Vol 17 (19) ◽  
pp. 13006-13012 ◽  
Author(s):  
Chao-Feng Wu ◽  
Tian-Ran Wei ◽  
Jing-Feng Li
Keyword(s):  
Solid Solution ◽  
Transport Properties ◽  
Solid Solutions ◽  
Thermoelectric Materials ◽  
Thermal Transport ◽  
Thermoelectric Performance ◽  
Substitution Effects ◽  
Thermal Transport Properties ◽  
Sn Substitution

Semiconducting characteristics of Pb1−xSnxSe solid solutions were investigated to reveal the Sn substitution effects on thermoelectric performance.

scholarly journals Enhancement of Thermoelectric Properties of Layered Chalcogenide Materials

2020 ◽  
Vol 59 (1) ◽  
pp. 371-378
Author(s):  
Manal M. Alsalama ◽  
Hicham Hamoudi ◽  
Ahmed Abdala ◽  
Zafar K. Ghouri ◽  
Khaled M. Youssef
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Basic Knowledge ◽  
Physical Parameters ◽  
Maximum Improvement ◽  
Chalcogenide Materials ◽  
Layered Chalcogenide

AbstractThermoelectric materials have long been proven to be effective in converting heat energy into electricity and vice versa. Since semiconductors have been used in the thermoelectric field, much work has been done to improve their efficiency. The interrelation between their thermoelectric physical parameters (Seebeck coefficient, electrical conductivity, and thermal conductivity) required special tailoring in order to get the maximum improvement in their performance. Various approaches have been reported in the research for developing thermoelectric performance, including doping and alloying, nanostructuring, and nanocompositing. Among different types of thermoelectric materials, layered chalcogenide materials are unique materials with distinctive properties. They have low self-thermal conductivity, and their layered structure allows them to be modified easily to improve their thermoelectric performance. In this review, basic knowledge of thermoelectric concepts and challenges for enhancing the figure of merit is provided. It discusses briefly different groups of layered chalcogenide thermoelectric materials with their structure and thermoelectric properties. It also reports different approaches in the literature for improving their performance and the recent progress done in this field. It highlights graphene as a promising nano additive to layered chalcogenide materials’ matrix and shows its effect on enhancing their figure of merit.

Synthesis and thermoelectric properties of antifluorite materials

2007 ◽  
Vol 1044 ◽  
Author(s):  
Xiunu Sophie Lin ◽  
Dongli Wang ◽  
Matthew Beekman ◽  
George Nolas
Keyword(s):  
Low Temperature ◽  
Transport Properties ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Group Iv ◽  
Optimal Performance ◽  
Structure Property ◽  
Structure Property Relationships ◽  
Elemental Semiconductors

AbstractThe compounds Mg2X (where X=Si, Ge, Sn) crystallize in the antifluorite structure. They possess properties that are similar to that of the group IV elemental semiconductors thus they have long been recognized as good candidates for thermoelectric applications. In addition, their properties can be readily tuned by doping or alloying. However, optimal performance of these materials requires continued investigation. We present low-temperature transport properties measurements of Sb doped Mg2X. Structure-property relationships are reported while their thermoelectric properties are investigated systematically in order to elucidate their potential as thermoelectric materials.

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