P-Type Characteristic of Nitrogen-Doped ZnO Films

Nitrogen-doped ZnO thin films were grown on a-plane Al2O3 by plasma-assisted molecular beam epitaxy. Hall-effect measurements indicated that the nitrogen-doped ZnO films showed p-type behavior first, then n-type, with the growth conditions changing from oxygen-radical-rich to oxygen-radical-deficient ambience, accompanied with the increase of the N/O ratio in the plasmas. The increasing green emission in the low temperature photoluminescence spectra, related to single ionized oxygen vacancy in ZnO, was ascribed to the decrease of active oxygen atoms in the precursor plasmas. CN complex, a donor defect with low formation energy, was demonstrated to be easily introduced into ZnO under O-radical-deficient ambience, which compensated the nitrogen-related acceptor, along with the oxygen vacancy.

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P-type Nitrogen Doped ZnO Films Grown By Thermal Evaporation

MRS Proceedings ◽

10.1557/proc-1201-h02-08 ◽

2009 ◽

Vol 1201 ◽

Cited By ~ 1

Author(s):

Wei Mu ◽

Lei Guo ◽

Lei Kerr ◽

David C. Look

Keyword(s):

Growth Process ◽

Thermal Evaporation ◽

Critical Role ◽

Zno Films ◽

Electrical And Optical Properties ◽

Nitrogen Doped ◽

Chemical Reaction Mechanism ◽

Doped Zno ◽

Thermal Evaporation Deposition ◽

P Type

AbstractWe report the formation of p-type nitrogen doped ZnO (ZnO:N) grown by thermal-evaporation deposition. The effects of nitrogen precursors on the electrical and optical properties of ZnO:N were investigated. This study shows that growth process plays a critical role in the electrical properties of ZnO:N. The chemical reaction mechanism was analyzed.

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Room-temperature ferromagnetism in p-type nitrogen-doped ZnO films

Materials Letters ◽

10.1016/j.matlet.2015.08.143 ◽

2015 ◽

Vol 161 ◽

pp. 355-359 ◽

Cited By ~ 12

Author(s):

Xinran Nie ◽

Bin Zhang ◽

Jianzhong Wang ◽

Liqun Shi ◽

Zengfeng Di ◽

...

Keyword(s):

Room Temperature ◽

Room Temperature Ferromagnetism ◽

Zno Films ◽

Nitrogen Doped ◽

Doped Zno ◽

P Type

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Affection of Post-Nitrogen-Doping of ZnO Columnar Films Photo-Anode on Performance of Dye-Sensitized Solar Cells

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.875-877.1899 ◽

2014 ◽

Vol 875-877 ◽

pp. 1899-1903

Author(s):

Hong Quan Zhou ◽

Xiao Ping Zou ◽

Gang Qiang Yang ◽

Gong Qing Teng ◽

Zong Bo Huang ◽

...

Keyword(s):

Solar Cells ◽

Indium Tin Oxide ◽

Dye Sensitized Solar Cells ◽

Phase Method ◽

Zno Films ◽

Nitrogen Doped ◽

Dye Sensitized ◽

Doped Zno ◽

P Type ◽

Sensitized Solar Cells

ZnO was a promising n-type conductive semiconductor material for dye-sensitized solar cells. Stable and efficient preparation of high quality p-type ZnO films became the main difficulty in current research. In this paper, a nitrogen-doped ZnO columnar film on an indium tin oxide (ITO) substrate was successfully obtained by gas phase method. The absorption of visible light was improved by nitrogen-doped ZnO columnar films. This experiment provided a good strategy for the full utilization of solar energy.

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p-TYPE NITROGEN-DOPED ZnO MICRORODS PREPARATION BY SPRAY PYROLYSIS

Surface Review and Letters ◽

10.1142/s0218625x12500515 ◽

2012 ◽

Vol 19 (05) ◽

pp. 1250051 ◽

Cited By ~ 3

Author(s):

F. ZAHEDI ◽

R. S. DARIANI ◽

S. M. ROZATI

Keyword(s):

Spray Pyrolysis ◽

Photoelectron Spectroscopy ◽

Spray Pyrolysis Technique ◽

Atomic Ratio ◽

Zno Films ◽

Ultraviolet Emission ◽

Nitrogen Doped ◽

Conductivity Type ◽

Doped Zno ◽

P Type

Nitrogen doped ZnO films with different N/Zn atomic ratio have been prepared by spray pyrolysis technique on glass substrate at 500°C. N/Zn atomic ratio has been selected 0, 0.5, 1, 2 and 3. The effect of N/Zn ratio on structural, optical and electrical properties has been investigated. Hall effect measurement studies show that the conductivity type of the films is affected by N/Zn ratio. The conductivity type of films changes from n for N/Zn = 0 and 0.5 to p for N/Zn = 1 and 2. Further increasing in N/Zn to 3 again led to n-type conductivity. p-type ZnO:N microrods film prepared with N/Zn = 1 has highest carrier concentration (1.36 × 1016 cm-3) and lowest resistivity (628 Ω.cm). All films are polycrystalline with hexagonal wurtzite structure. (002) plane is preferential orientation for all films. Surface morphology changes from rods to grains by increasing in N/Zn ratio. Optical transmission of the films increases with increasing in N/Zn ratio. Photoluminescence spectra at room temperature show the ultraviolet emission and two visible emissions at 440 nm and 520 nm. X-ray photoelectron spectroscopy analysis confirms the incorporation of nitrogen in ZnO:N film with N/Zn = 1 .

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