Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience

Nitrogen-doped ZnO thin films were grown on a-plane Al2O3 by plasma-assisted molecular beam epitaxy. Hall-effect measurements indicated that the nitrogen-doped ZnO films showed p-type behavior first, then n-type, with the growth conditions changing from oxygen-radical-rich to oxygen-radical-deficient ambience, accompanied with the increase of the N/O ratio in the plasmas. The increasing green emission in the low temperature photoluminescence spectra, related to single ionized oxygen vacancy in ZnO, was ascribed to the decrease of active oxygen atoms in the precursor plasmas. CN complex, a donor defect with low formation energy, was demonstrated to be easily introduced into ZnO under O-radical-deficient ambience, which compensated the nitrogen-related acceptor, along with the oxygen vacancy.

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P-Type Characteristic of Nitrogen-Doped ZnO Films

Journal of Electronic Materials ◽

10.1007/s11664-018-6468-2 ◽

2018 ◽

Vol 47 (9) ◽

pp. 5607-5613 ◽

Cited By ~ 7

Author(s):

Zi-Neng Ng ◽

Kah-Yoong Chan ◽

Shahruddin Muslimin ◽

Dietmar Knipp

Keyword(s):

Zno Films ◽

Nitrogen Doped ◽

Doped Zno ◽

P Type

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P-type Nitrogen Doped ZnO Films Grown By Thermal Evaporation

MRS Proceedings ◽

10.1557/proc-1201-h02-08 ◽

2009 ◽

Vol 1201 ◽

Cited By ~ 1

Author(s):

Wei Mu ◽

Lei Guo ◽

Lei Kerr ◽

David C. Look

Keyword(s):

Growth Process ◽

Thermal Evaporation ◽

Critical Role ◽

Zno Films ◽

Electrical And Optical Properties ◽

Nitrogen Doped ◽

Chemical Reaction Mechanism ◽

Doped Zno ◽

Thermal Evaporation Deposition ◽

P Type

AbstractWe report the formation of p-type nitrogen doped ZnO (ZnO:N) grown by thermal-evaporation deposition. The effects of nitrogen precursors on the electrical and optical properties of ZnO:N were investigated. This study shows that growth process plays a critical role in the electrical properties of ZnO:N. The chemical reaction mechanism was analyzed.

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Room-temperature ferromagnetism in p-type nitrogen-doped ZnO films

Materials Letters ◽

10.1016/j.matlet.2015.08.143 ◽

2015 ◽

Vol 161 ◽

pp. 355-359 ◽

Cited By ~ 12

Author(s):

Xinran Nie ◽

Bin Zhang ◽

Jianzhong Wang ◽

Liqun Shi ◽

Zengfeng Di ◽

...

Keyword(s):

Room Temperature ◽

Room Temperature Ferromagnetism ◽

Zno Films ◽

Nitrogen Doped ◽

Doped Zno ◽

P Type

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Affection of Post-Nitrogen-Doping of ZnO Columnar Films Photo-Anode on Performance of Dye-Sensitized Solar Cells

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.875-877.1899 ◽

2014 ◽

Vol 875-877 ◽

pp. 1899-1903

Author(s):

Hong Quan Zhou ◽

Xiao Ping Zou ◽

Gang Qiang Yang ◽

Gong Qing Teng ◽

Zong Bo Huang ◽

...

Keyword(s):

Solar Cells ◽

Indium Tin Oxide ◽

Dye Sensitized Solar Cells ◽

Phase Method ◽

Zno Films ◽

Nitrogen Doped ◽

Dye Sensitized ◽

Doped Zno ◽

P Type ◽

Sensitized Solar Cells

ZnO was a promising n-type conductive semiconductor material for dye-sensitized solar cells. Stable and efficient preparation of high quality p-type ZnO films became the main difficulty in current research. In this paper, a nitrogen-doped ZnO columnar film on an indium tin oxide (ITO) substrate was successfully obtained by gas phase method. The absorption of visible light was improved by nitrogen-doped ZnO columnar films. This experiment provided a good strategy for the full utilization of solar energy.

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Preparation of Nitrogen Doped ZnO Dilute Ferromagnetic Semiconductor by Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.79-82.1827 ◽

2009 ◽

Vol 79-82 ◽

pp. 1827-1830 ◽

Cited By ~ 2

Author(s):

Wen Song Lin ◽

Wang Wei ◽

Wei Heng

Keyword(s):

Magnetron Sputtering ◽

Hall Effect ◽

Multilayer Films ◽

Ferromagnetic Semiconductor ◽

Zno Films ◽

Vibrating Sample Magnetometer ◽

X Ray ◽

Nitrogen Doped ◽

Hall Effect Measurements ◽

Doped Zno

ZnO/Zn3N2 multilayer films were synthesized on slide glass substrates by radio-frequency (RF) magnetron sputtering technology with RF powers of 100 W. After annealing in oxygen atmosphere for 3 hours at the temperature changed from 473 K to 873 K, the multilayer films were changed to be single-layer films of nitrogen doped ZnO dilute ferromagnetic semiconductor. The structural, elementary constituents, carrier concentration and magnetic properties of the films were investigated with X-ray diffraction (XRD), X-ray photoemission spectroscopy (XPS), hall-effect measurements and vibrating sample magnetometer (VSM) magnetization measurements, respectively. The XRD measurements revealed that the nitrogen doped ZnO films had a wurtzite structure with their crystal (002) directions oriented along the c-axis of the substrate. Hall-effect measurements indicated that nitrogen doped ZnO thin film, annealed at 673 K for 3 hour, had the best p-type properties. Carrier concentration and resistivity of the film was 3.12 × 1017 cm-3 and 93 Ωcm, respectively. A Lakeshore 7407 vibrating sample magnetometer was employed for magnetization (M) versus applied field strength (H) investigations of these thin films. A typical hysteresis loop was found in the observed M–H curve of the samples, demonstrated that the films annealed at 673 K for 3 hour were ferromagnetic at 300 K. The XPS analysis revealed the presence of Zn-N chemical bonding in the films. It suggested that nitrogen atoms are substituted at the oxygen sites of the ZnO films and mediate the ferromagnetic properties of the films.

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p-TYPE NITROGEN-DOPED ZnO MICRORODS PREPARATION BY SPRAY PYROLYSIS

Surface Review and Letters ◽

10.1142/s0218625x12500515 ◽

2012 ◽

Vol 19 (05) ◽

pp. 1250051 ◽

Cited By ~ 3

Author(s):

F. ZAHEDI ◽

R. S. DARIANI ◽

S. M. ROZATI

Keyword(s):

Spray Pyrolysis ◽

Photoelectron Spectroscopy ◽

Spray Pyrolysis Technique ◽

Atomic Ratio ◽

Zno Films ◽

Ultraviolet Emission ◽

Nitrogen Doped ◽

Conductivity Type ◽

Doped Zno ◽

P Type

Nitrogen doped ZnO films with different N/Zn atomic ratio have been prepared by spray pyrolysis technique on glass substrate at 500°C. N/Zn atomic ratio has been selected 0, 0.5, 1, 2 and 3. The effect of N/Zn ratio on structural, optical and electrical properties has been investigated. Hall effect measurement studies show that the conductivity type of the films is affected by N/Zn ratio. The conductivity type of films changes from n for N/Zn = 0 and 0.5 to p for N/Zn = 1 and 2. Further increasing in N/Zn to 3 again led to n-type conductivity. p-type ZnO:N microrods film prepared with N/Zn = 1 has highest carrier concentration (1.36 × 1016 cm-3) and lowest resistivity (628 Ω.cm). All films are polycrystalline with hexagonal wurtzite structure. (002) plane is preferential orientation for all films. Surface morphology changes from rods to grains by increasing in N/Zn ratio. Optical transmission of the films increases with increasing in N/Zn ratio. Photoluminescence spectra at room temperature show the ultraviolet emission and two visible emissions at 440 nm and 520 nm. X-ray photoelectron spectroscopy analysis confirms the incorporation of nitrogen in ZnO:N film with N/Zn = 1 .

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P-Type Nitrogen-Doped ZnO Films Prepared by In-Situ Thermal Oxidation of Zn 3 N 2 Films

Chinese Physics Letters ◽

10.1088/0256-307x/33/5/058101 ◽

2016 ◽

Vol 33 (5) ◽

pp. 058101 ◽

Cited By ~ 7

Author(s):

Yu-Ping Jin ◽

Bin Zhang ◽

Jian-Zhong Wang ◽

Li-Qun Shi

Keyword(s):

Thermal Oxidation ◽

Zno Films ◽

Nitrogen Doped ◽

Doped Zno ◽

P Type

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Formation of V Zn -N O acceptors with the assistance of tellurium in nitrogen-doped ZnO films

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2016.12.395 ◽

2017 ◽

Vol 699 ◽

pp. 484-488 ◽

Cited By ~ 9

Author(s):

Kun Tang ◽

Shunming Zhu ◽

Zhonghua Xu ◽

Yang Shen ◽

Jiandong Ye ◽

...

Keyword(s):

Zno Films ◽

Nitrogen Doped ◽

Doped Zno

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Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

MRS Proceedings ◽

10.1557/opl.2013.4 ◽

2013 ◽

Vol 1494 ◽

pp. 77-82

Author(s):

T. N. Oder ◽

A. Smith ◽

M. Freeman ◽

M. McMaster ◽

B. Cai ◽

...

Keyword(s):

Rf Magnetron Sputtering ◽

Zno Films ◽

X Ray Diffraction ◽

X Ray ◽

Sapphire Substrates ◽

Hall Effect Measurements ◽

Sputter Deposited ◽

P Type ◽

Post Deposition ◽

Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

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