Reduction in Self-Heating Effect of SOI MOSFETs by Three Vertical 4H-SiC Layers in the BOX
2020 ◽
Vol 1699
◽
pp. 012006
Keyword(s):
Keyword(s):
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2019 ◽
Vol 7
◽
pp. 1264-1269
◽
2019 ◽
Vol 66
(10)
◽
pp. 4258-4263
◽