Comparison of high-order silanes and island formation phenomena during SiGe epitaxy at 500 °C

IntroductionA simple and accurate technique to determine the Burgers vector of a dislocation has become feasible with the advent of HVEM. The conventional image vanishing technique(1) using Bragg conditions with the diffraction vector perpendicular to the Burgers vector suffers from various drawbacks; The dislocation image appears even when the g.b = 0 criterion is satisfied, if the edge component of the dislocation is large. On the other hand, the image disappears for certain high order diffractions even when g.b ≠ 0. Furthermore, the determination of the magnitude of the Burgers vector is not easy with the criterion. Recent image simulation technique is free from the ambiguities but require too many parameters for the computation. The weak-beam “fringe counting” technique investigated in the present study is immune from the problems. Even the magnitude of the Burgers vector is determined from the number of the terminating thickness fringes at the exit of the dislocation in wedge shaped foil surfaces.

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The usefulness of high index low symmetry zone axes for holz line analysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126718 ◽

1987 ◽

Vol 45 ◽

pp. 384-385

Author(s):

C. M. Sung ◽

D. B. Williams

Keyword(s):

Lattice Parameter ◽

High Order ◽

Zone Axis ◽

High Index ◽

High Symmetry ◽

Second Phases ◽

Line Patterns ◽

Low Symmetry ◽

Line Analysis

Researchers have tended to use high symmetry zone axes (e.g. <111> <114>) for High Order Laue Zone (HOLZ) line analysis since Jones et al reported the origin of HOLZ lines and described some of their applications. But it is not always easy to find HOLZ lines from a specific high symmetry zone axis during microscope operation, especially from second phases on a scale of tens of nanometers. Therefore it would be very convenient if we can use HOLZ lines from low symmetry zone axes and simulate these patterns in order to measure lattice parameter changes through HOLZ line shifts. HOLZ patterns of high index low symmetry zone axes are shown in Fig. 1, which were obtained from pure Al at -186°C using a double tilt cooling holder. Their corresponding simulated HOLZ line patterns are shown along with ten other low symmetry orientations in Fig. 2. The simulations were based upon kinematical diffraction conditions.

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Are HOLZ lines kinematic in off-zone-axis orientation?

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100149295 ◽

1993 ◽

Vol 51 ◽

pp. 692-693

Author(s):

J. M. Zuo ◽

A. L. Weickenmeier ◽

R. Holmestad ◽

J. C. H. Spence

Keyword(s):

Structure Determination ◽

Standard Procedure ◽

High Order ◽

Zone Axis ◽

Great Promise ◽

Line Position ◽

Measured Intensity ◽

Constant Intensity ◽

Axis Orientation ◽

Diffraction Condition

The application of high order reflections in a weak diffraction condition off the zone axis center, including those in high order laue zones (HOLZ), holds great promise for structure determination using convergent beam electron diffraction (CBED). It is believed that in this case the intensities of high order reflections are kinematic or two-beam like. Hence, the measured intensity can be related to the structure factor amplitude. Then the standard procedure of structure determination in crystallography may be used for solving unknown structures. The dynamic effect on HOLZ line position and intensity in a strongly diffracting zone axis is well known. In a weak diffraction condition, the HOLZ line position may be approximated by the kinematic position, however, it is not clear whether this is also true for HOLZ intensities. The HOLZ lines, as they appear in CBED patterns, do show strong intensity variations along the line especially near the crossing of two lines, rather than constant intensity along the Bragg condition as predicted by kinematic or two beam theory.

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Transmission Electron Microscopy characterization of epitaxial III-V semiconductor thin films grown on Si(100) by ion-assisted deposition

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176563 ◽

1990 ◽

Vol 48 (4) ◽

pp. 686-687

Author(s):

L. Hultman ◽

C.-H. Choi ◽

R. Kaspi ◽

R. Ai ◽

S.A. Barnett

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Ion Irradiation ◽

High Energy ◽

Nucleation Mechanism ◽

Layer By Layer ◽

Extended Defect ◽

Island Formation ◽

Si Substrates ◽

Transmission Electron

III-V semiconductor films nucleate by the Stranski-Krastanov (SK) mechanism on Si substrates. Many of the extended defects present in the films are believed to result from the island formation and coalescence stage of SK growth. We have recently shown that low (-30 eV) energy, high flux (4 ions per deposited atom), Ar ion irradiation during nucleation of III-V semiconductors on Si substrates prolongs the 1ayer-by-layer stage of SK nucleation, leading to a decrease in extended defect densities. Furthermore, the epitaxial temperature was reduced by >100°C due to ion irradiation. The effect of ion bombardment on the nucleation mechanism was explained as being due to ion-induced dissociation of three-dimensional islands and ion-enhanced surface diffusion.For the case of InAs grown at 380°C on Si(100) (11% lattice mismatch), where island formation is expected after ≤ 1 monolayer (ML) during molecular beam epitaxy (MBE), in-situ reflection high-energy electron diffraction (RHEED) showed that 28 eV Ar ion irradiation prolonged the layer-by-layer stage of SK nucleation up to 10 ML. Otherion energies maintained layer-by-layer growth to lesser thicknesses. The ion-induced change in nucleation mechanism resulted in smoother surfaces and improved the crystalline perfection of thicker films as shown by transmission electron microscopy and X-ray rocking curve studies.

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