On-resistance, thermal resistance and reverse recovery time of power MOSFETs at 77 K

Cryogenics ◽  
1989 ◽  
Vol 29 (10) ◽  
pp. 1006-1014 ◽  
Author(s):  
O. Mueller
Keyword(s):  
Thermal Resistance ◽  
Recovery Time ◽  
Power Mosfets ◽  
Reverse Recovery Time

High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode

2014 ◽  
Vol 778-780 ◽  
pp. 841-844 ◽  
Author(s):  
Koji Nakayama ◽  
Shuji Ogata ◽  
Toshihiko Hayashi ◽  
Tetsuro Hemmi ◽  
Atsushi Tanaka ◽  
...  
Keyword(s):  
High Voltage ◽  
Recovery Time ◽  
Carrier Lifetime ◽  
Low Voltage ◽  
Reduction Rate ◽  
Drift Region ◽  
Pin Diode ◽  
Fully Depleted ◽  
Fast Switching ◽  
Reverse Recovery Time

The reverse recovery characteristics of a 4H-SiC PiN diode under higher voltage and faster switching are investigated. In a high-voltage 4H-SiC PiN diode, owing to an increased thickness, the drift region does not become fully depleted at a relatively low voltage Furthermore, an electron–hole recombination must be taken into account when the carrier lifetime is equal to or shorter than the reverse recovery time. High voltage and fast switching are therefore needed for accurate analysis of the reverse recovery characteristics. The current reduction rate increases up to 2 kA/μs because of low stray inductance. The maximum reverse voltage during the reverse recovery time reaches 8 kV, at which point the drift layer is fully depleted. The carrier lifetime at the high level injection is 0.086 μs at room temperature and reaches 0.53 μs at 250 °C.

scholarly journals Effects of Electrostatic Discharge Stress on Current-Voltage and Reverse Recovery Time of Fast Power Diode

2014 ◽  
Vol 14 (4) ◽  
pp. 495-502 ◽  
Author(s):  
Daoheung Bouangeune ◽  
Sang-Sik Choi ◽  
Deok-Ho Cho ◽  
Kyu-Hwan Shim ◽  
Sung-Yong Chang ◽  
...  
Keyword(s):  
Recovery Time ◽  
Electrostatic Discharge ◽  
Current Voltage ◽  
Fast Power ◽  
Power Diode ◽  
Reverse Recovery Time

Application of Silicon Carbide Diode in Ultrasound High Voltage Pulse Protection Circuit

2013 ◽  
Vol 290 ◽  
pp. 115-119
Author(s):  
Shi Yuan Zhou ◽  
Kai Zhang ◽  
Dinguo Xiao ◽  
Chun Guang Xu ◽  
Bo Yang
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
High Voltage ◽  
Voltage Pulse ◽  
Recovery Time ◽  
High Performance ◽  
High Voltage Pulse ◽  
Protection Level ◽  
Protection Circuit ◽  
Reverse Recovery Time

SiC diode (Silicon Carbide Diode) is a newly commercial available Schottky barrier diode with zero reverse-recovery-time, which is a perfect candidate for fabricating high voltage pulse protection circuit in ultrasonic transceiver system. With SiC diode’s high performance, the circuit can deliver 400 volts or higher voltage protection level, which is not an easy job for other kind of diodes. In this article, the theory of diode-bridge protection circuit is briefly discussed, and a SiC diode-bridge protection circuit was fabricated, and some experiments has been done to verify the feasibility of using SiC diodes in diode-bridge protection circuit.

Reverse Recovery Time of Junction Diodes with High Capture Rate of Minority Carriers in the Low Injection Level

1992 ◽  
Vol 31 (Part 1, No. 6A) ◽  
pp. 1836-1837
Author(s):  
Hajime Tomokage ◽  
Tetsuya Yamakawa ◽  
Tokuo Miyamoto ◽  
Masami Morooka
Keyword(s):  
Recovery Time ◽  
Capture Rate ◽  
Injection Level ◽  
Minority Carriers ◽  
Reverse Recovery Time

On-wafer measurement of the reverse-recovery time of integrated diodes by Transmission-Line-Pulsing (TLP)

2011 ◽  
Vol 51 (8) ◽  
pp. 1309-1314 ◽  
Author(s):  
Martin Sauter ◽  
Werner Simbürger ◽  
David Johnsson ◽  
Matthias Stecher
Keyword(s):  
Transmission Line ◽  
Recovery Time ◽  
Reverse Recovery Time

Extraction of Trench Capacitance and Reverse Recovery Time of InGaAs Self-Switching Diode

2019 ◽  
Vol 18 ◽  
pp. 925-931 ◽  
Author(s):  
Sahil Garg ◽  
Bipan Kaushal ◽  
Sanjeev Kumar ◽  
Shahrir Rizal Kasjoo ◽  
Santanu Mahapatra ◽  
...  
Keyword(s):  
Recovery Time ◽  
Reverse Recovery Time

High-Voltage Stacked Diode Package

2015 ◽  
Vol 2015 (1) ◽  
pp. 000225-000230 ◽  
Author(s):  
Lauren Boteler ◽  
Alexandra Rodriguez ◽  
Miguel Hinojosa ◽  
Damian Urciuoli
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
Recovery Time ◽  
Load Test ◽  
Avalanche Breakdown ◽  
Electric Force ◽  
Inductive Load ◽  
Turn On ◽  
Series Configuration ◽  
Reverse Recovery Time

The Army is moving to a more electric force with a number of high-voltage applications. To support this transition, there have been efforts to develop high voltage (15–30 kV) single-die 4H-silicon carbide (SiC) bipolar switches and diodes. However, packaging these high-voltage devices has proven to be challenging since standard packaging methods cannot withstand the high voltages in a compact form. Therefore, this work aims to develop a compact prototype package with improved size, weight, and power density by stacking diodes. The stacked diode approach allows elimination of almost half of the wirebonds, reduces the board size by 45%, and reduces the package inductance. A module has been designed, fabricated, and tested which is the first 30 kV module reported in the literature to stack two high-voltage diodes in a series configuration. The package has a number of features specific to high-voltage packaging including (1) two fins that extend the perimeter of the package to mitigate shorting, and (2) all the leads were designed with rounded corners to minimize voltage crowding. Hi-pot tests were performed on the unpopulated package and showed the package can withstand 30 kV without breaking down. The completed package with the stacked diodes showed avalanche breakdown occurring at 29 kV. The complete package was then compared to an equivalent discrete diode module and showed a 10X reduction in size. During a clamped-inductive load test the stacked diodes showed lower parasitic capacitance, faster reverse recovery time, and lower turn on energy as compared to the discrete diode packages.

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