Epitaxial growth of CuGaSe2 and CuInSe2 single crystals by halogen transport method using Se(CH3)2

1994 ◽  
Vol 143 (3-4) ◽  
pp. 213-220 ◽  
Author(s):  
Osamu Igarashi
Keyword(s):  
Epitaxial Growth ◽  
Single Crystals ◽  
Transport Method

Crystallization of Intrinsic Amorphous Layers Produced by Stoichiometric Implantation of Al and O Ions in A-Axis Oriented Al2O3 Single Crystals

1989 ◽  
Vol 157 ◽  
Author(s):  
W. Zhou ◽  
D.X. Cao ◽  
D.K. Sood
Keyword(s):  
Free Surface ◽  
Epitaxial Growth ◽  
Single Crystals ◽  
Isothermal Annealing ◽  
Interface Velocity ◽  
Planar Interface ◽  
Rapid Crystallization ◽  
Substrate Orientation ◽  
Prolonged Annealing ◽  
Tentative Model

ABSTRACTIsothermal annealing behaviour of intrinsic amorphous layers produced by stoichiometric implantation in a—axis oriented α—Al2O3 single crystals has been studied. The amorphous phase transforms directly to α—Al2O3 at a well defined planar interface which moves towards the free surface. The epitaxial growth slows down after initial rapid crystallization, indicating two separate regimes. The interface velocity shows Arrhenius behaviour in both regimes with activation energies of 0.6 and 0.08 eV respectively. There is an evidence for additional surface or random crystallization into κ or γ-Al2O3 phases within the first few nm on the surface, after prolonged annealing. These results are remarkably different from those reported previously for c–axis oriented Al2O3 crystals, showing the importance of substrate orientation during crystallization. A tentative model to explain the crystallization behaviour is discussed.

Vapor Phase Epitaxial Growth of AlAs by Chloride Transport Method

1987 ◽  
Vol 134 (6) ◽  
pp. 1548-1553 ◽  
Author(s):  
Fumio Hasegawa ◽  
Tadashi Yamamoto ◽  
Koji Katayama ◽  
Yasuo Nannichi
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Chloride Transport ◽  
Transport Method

AlN Substrates and Epitaxy Results

2010 ◽  
Vol 645-648 ◽  
pp. 1183-1186
Author(s):  
Yuri N. Makarov ◽  
T.Yu. Chemekova ◽  
O.V. Avdeev ◽  
N. Mokhov ◽  
S.S. Nagalyuk ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Single Crystals ◽  
Uv Light ◽  
Laser Diodes ◽  
Ultra Violet ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Light Emitting ◽  
Saw Devices ◽  
Bulk Single Crystals

AlN substrates are produced by Physical Vapor Transport (PVT) growth of AlN bulk single crystals followed by post growth processing of the crystals (calibration, slicing, lapping, and polishing). The AlN substrates are suitable for epitaxial growth. The substrates may be used for development of devices such as ultra violet (UV) light emitting diodes (LEDs) and laser diodes (LDs), Piezo-Electric Transducers, SAW devices, RF Transistors, etc.

Direct observation of the epitaxial growth of molecular layers on molecular single crystals

2006 ◽  
Vol 89 (26) ◽  
pp. 261905 ◽  
Author(s):  
A. Sassella ◽  
A. Borghesi ◽  
M. Campione ◽  
S. Tavazzi ◽  
C. Goletti ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Single Crystals ◽  
Direct Observation ◽  
Molecular Layers

Role of Cadmium on Epitaxial Growth of PbSe on InP Single Crystals

2003 ◽  
Vol 150 (2) ◽  
pp. C89 ◽  
Author(s):  
M. Froment ◽  
L. Beaunier ◽  
H. Cachet ◽  
A. Etcheberry
Keyword(s):  
Epitaxial Growth ◽  
Single Crystals

Growth of 6H-SiC Single Crystals under Quasi-Equilibrium Conditions

2008 ◽  
Vol 600-603 ◽  
pp. 15-18
Author(s):  
Emil Tymicki ◽  
Krzysztof Grasza ◽  
Władysław Hofman ◽  
Ryszard Diduszko ◽  
Rafał Bożek
Keyword(s):  
Single Crystals ◽  
Quasi Equilibrium ◽  
Vapour Transport ◽  
X Ray Diffraction ◽  
Equilibrium Conditions ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Koh Etching ◽  
Transport Method

Silicon carbide single crystals grown by the seeded physical vapour transport method have been investigated. These crystals were grown on the Si-face (0001) of 6H-SiC seeds. The growth proceeded under quasi-equilibrium conditions with the growth rate in the range 0.05-0.2 mm/h, that was extremely low as compared to used in standard growth processes. The shape and morphology of the crystallization fronts have been studied. Moreover, defects in crystals and wafers cut from these crystals were examined by optical and atomic force microscopy combined with KOH etching and X-Ray diffraction.

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