Role of Cadmium on Epitaxial Growth of PbSe on InP Single Crystals

AbstractWe report the magneto-conductivity analysis of Bi2Se3 single crystal at different temperatures in a magnetic field range of ± 14 T. The single crystals are grown by the self-flux method and characterized through X-ray diffraction, Scanning Electron Microscopy, and Raman Spectroscopy. The single crystals show magnetoresistance (MR%) of around 380% at a magnetic field of 14 T and a temperature of 5 K. The Hikami–Larkin–Nagaoka (HLN) equation has been used to fit the magneto-conductivity (MC) data. However, the HLN fitted curve deviates at higher magnetic fields above 1 T, suggesting that the role of surface-driven conductivity suppresses with an increasing magnetic field. This article proposes a speculative model comprising of surface-driven HLN and added quantum diffusive and bulk carriers-driven classical terms. The model successfully explains the MC of the Bi2Se3 single crystal at various temperatures (5–200 K) and applied magnetic fields (up to 14 T).

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Internal melt figures in ice by rapid adiabatic compression

Journal of Glaciology ◽

10.3189/s0022143000003890 ◽

1994 ◽

Vol 40 (134) ◽

pp. 132-134

Author(s):

R.E. Gagnon ◽

C. Tulk ◽

H. Kiefte

Keyword(s):

Phase Transformations ◽

Grain Boundaries ◽

Single Crystals ◽

Adiabatic Compression ◽

Air Bubbles ◽

Water Ice ◽

Deep Focus ◽

And Behavior ◽

First Time

AbstractSingle crystals and bicrystals of water ice have been adiabatically pressurized to produce, and clearly illustrate, two types of internal melt figures: (1) dendritic figures that grow from nucleation imperfections on the specimen’s surface, or from air bubbles at grain boundaries, into the ice as pressure is elevated; and (2) compression melt fractures, flat liquid-filled disks, that nucleate at imperfections in the crystal and grow with the application of pressure eventually to sprout dendritic fingers at the periphery. The transparency of the ice permitted visualization of the growth and behavior of the figures, and this could be an important tool in understanding the role of phase transformations in deep-focus earthquakes. Correlation between figure size and pressure is noted for the first time.

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Spin-Lattice Coupling and Peculiarities of Magnetic Behavior of Ferrimagnetic Ludwigites Mn0.52+M1.52+Mn3+BO5(M=Cu, Ni)

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.233-234.133 ◽

2015 ◽

Vol 233-234 ◽

pp. 133-136 ◽

Cited By ~ 10

Author(s):

Leonard Bezmaternykh ◽

Evgeniya Moshkina ◽

Evgeniy Eremin ◽

Maxim Molokeev ◽

Nikita Volkov ◽

...

Keyword(s):

Temperature Field ◽

Low Temperature ◽

Magnetic Anisotropy ◽

Single Crystals ◽

Magnetic Behavior ◽

Temperature Hysteresis ◽

Spin Lattice ◽

Field Magnetization ◽

Lattice Coupling

Temperature-field and orientational magnetization dependences of single crystals were measured. Both samples demonstrate significant field-depending temperature hysteresis and low-temperature counter field magnetization. The correlation of orientational dependences of these effects and magnetic anisotropy is analyzed; the role of spin-lattice interactions is discussed.

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Oxide Mediated Epitaxial Growth of CoSi2 in a Single Deposition Step

MRS Proceedings ◽

10.1557/proc-564-117 ◽

1999 ◽

Vol 564 ◽

Cited By ~ 3

Author(s):

S. Ohmi ◽

R. T. Tung

Keyword(s):

Single Crystal ◽

Epitaxial Growth ◽

Diffusion Barrier ◽

Blocking Layer ◽

Deposition Step

AbstractA number of modifications of the oxide-mediated epitaxy (OME) technique are presented which have enabled the growth of thick (∼25–40nm) epitaxial CoSi2 layers in a single deposition sequence. The uses of (a) a thin Ti cap, (b) a thin Ti blocking layer, (c) the codeposition of Co-rich CoSix, and (d) the co-deposition of Col−xTix. have all been shown to lead to improved epitaxial quality over the pure Co OME process, for Co thickness greater than 6nm. Essentially uniform, single crystal silicide layers of over 25nm have been grown in a single deposition step. These results are supportive of the proposed role of a diffusion barrier/kinetics retarder on the part of the interlayer in the OME and the Ti-interlayer mediated epitaxy processes.

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Role of complexing agents on the etching characteristics of Bi-Sb alloy single crystals

Journal of Crystal Growth ◽

10.1016/0022-0248(80)90048-2 ◽

1980 ◽

Vol 48 (3) ◽

pp. 483-485

Author(s):

V.P. Bhatt ◽

A.R. Vyas ◽

G.R. Pandya

Keyword(s):

Single Crystals ◽

Complexing Agents

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A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy

Materials Science Forum ◽

10.4028/www.scientific.net/msf.645-648.271 ◽

2010 ◽

Vol 645-648 ◽

pp. 271-276 ◽

Cited By ~ 6

Author(s):

Robert E. Stahlbush ◽

Rachael L. Myers-Ward ◽

Brenda L. VanMil ◽

D. Kurt Gaskill ◽

Charles R. Eddy

Keyword(s):

Epitaxial Growth ◽

Basal Plane ◽

Reduction Process ◽

Epitaxial Layers ◽

In Situ Growth ◽

Half Loop ◽

Insight Into

The recently developed technique of UVPL imaging has been used to track the path of basal plane dislocations (BPDs) in SiC epitaxial layers. The glide of BPDs during epitaxial growth has been observed and the role of this glide in forming half-loop arrays has been examined. The ability to track the path of BPDs through the epitaxy has made it possible to develop a BPD reduction process for epitaxy grown on 8° offcut wafers, which uses an in situ growth interrupt and has achieved a BPD reduction of > 98%. The images also provide insight into the strong BPD reduction that typically occurs in epitaxy grown on 4° offcut wafers.

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