InGaAs(0.98 μm)/GaAs vertical cavity surface emitting laser grown by gas-source molecular beam epitaxy
1994 ◽
Vol 136
(1-4)
◽
pp. 216-220
◽
Keyword(s):
2004 ◽
Vol 22
(3)
◽
pp. 1526
◽
1996 ◽
Vol 35
(Part 2, No. 2A)
◽
pp. L150-L153
◽
2020 ◽
Vol 1697
◽
pp. 012178
1991 ◽
Vol 30
(Part 1, No. 12B)
◽
pp. 3883-3886
◽
1990 ◽
Vol 8
(2)
◽
pp. 336
◽
1991 ◽