Polarization control of vertical cavity surface emitting laser structure by using self-organized quantum wires grown on (775)B-oriented GaAs substrate by molecular beam epitaxy

2004 ◽  
Vol 22 (3) ◽  
pp. 1526 ◽  
Author(s):  
Yasuhide Ohno ◽  
Satoshi Shimomura ◽  
Satoshi Hiyamizu ◽  
Yasuyuki Takasuka ◽  
Mutsuo Ogura ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Quantum Wires ◽  
Cavity Surface ◽  
Polarization Control ◽  
Self Organized ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Fabrication of InGaAs Vertical-Cavity Surface-Emitting Laser by Molecular Beam Epitaxy and Its Room-Temperature Operation on (411)A GaAs Substrates

1996 ◽  
Vol 35 (Part 2, No. 2A) ◽  
pp. L150-L153 ◽  
Author(s):  
Yoshihiko Hanamaki ◽  
Yoshiyuki Watanuki ◽  
Hidefumi Akiyama ◽  
Tetsuya Takeuchi ◽  
Nagaatsu Ogasawara ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Cavity Surface ◽  
Gaas Substrates ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity ◽  
Room Temperature Operation

InGaAs(0.98 μm)/GaAs vertical cavity surface emitting laser grown by gas-source molecular beam epitaxy

1994 ◽  
Vol 136 (1-4) ◽  
pp. 216-220 ◽  
Author(s):  
Y.M. Houng ◽  
M.R.T. Tan ◽  
B.W. Liang ◽  
S.Y. Wang ◽  
L. Yang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cavity Surface ◽  
Gas Source ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity
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