Monte Carlo simulation of the neutral gas density and temperature distribution due to the recycling processes at a poloidal, toroidal or mushroom limiter and at the divertor plate of a poloidal divertor

1982 ◽  
Vol 111-112 ◽  
pp. 434-439 ◽  
Author(s):  
D. Reiter ◽  
A. Nicolai
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Temperature Distribution ◽  
Gas Density ◽  
Divertor Plate ◽  
Neutral Gas

Monte Carlo Simulation of Helium Transport in the Vicinity of Divertor Plate

1993 ◽  
Vol 33 (1) ◽  
pp. 35-41 ◽  
Author(s):  
B. Q. Deng ◽  
Zh. Y. Xie ◽  
H. W. Shi ◽  
H. H. Abou-gabal ◽  
G. A. Emmert
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Divertor Plate

A Parametric Study of the Impact of Energy Relaxation Time on Thermal Behavior of Power Si MOSFET in Electro-Thermal Analysis

2015 ◽  
Author(s):  
Risako Kibushi ◽  
Tomoyuki Hatakeyama ◽  
Shinji Nakagawa ◽  
Masaru Ishizuka
Keyword(s):  
Thermal Analysis ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Relaxation Time ◽  
Thermal Properties ◽  
Temperature Distribution ◽  
Energy Relaxation ◽  
Electrical Field ◽  
Energy Relaxation Time ◽  
Distribution Of Power

This paper describes the effect of variation of energy relaxation time on temperature distribution of power Si MOSFET in electro-thermal analysis. In previous our studies, thermal properties of power Si MOSFET are evaluated using electro-thermal analysis. However, in our previous calculation, energy relaxation time has been assumed to be constant at 0.3 ps, which is widely used value in electro-thermal analysis. This is because energy relaxation time cannot be calculated by classical physics, and it is difficult to detect exact energy relaxation time. However, energy relaxation time is important for evaluating heat generation in electro-thermal analysis. One method to obtain energy relaxation time is Monte Carlo simulation. In this research, we performed Monte-Carlo simulation, and electrical field and lattice temperature dependencies of energy relaxation time were evaluated. Then, we performed electro-thermal analysis of power Si MOSFET with various energy relaxation times, and the effect of change of energy relaxation time on temperature distribution of power Si MOSFET in electro-thermal analysis was discussed. Energy relaxation time in the range of 0.1–1000 kV/cm of electrical field was evaluated in Monte Carlo simulation. The results of Monte-Carlo simulation showed that maximum energy relaxation time becomes about 0.6 ps, and minimum energy relaxation time is about 0.30 ps. Following the results, to investigate the effect of variation of energy relaxation time on temperature distribution of power Si MOSFET, we changed energy relaxation time in electro-thermal analysis, and thermal properties of power Si MOSFET was calculated. The results of electro-thermal analysis showed that energy relaxation time has an effect on temperature distribution of power Si MOSFET. Therefore, accurate energy relaxation time should be considered in electro-thermal analysis for appropriate temperature distribution of power Si MOSFET.

Monte Carlo Simulation of Light Distribution in Liver Tumors for 808nm Wavelength Laser

2011 ◽  
Vol 464 ◽  
pp. 663-667
Author(s):  
Guo Ran Hua ◽  
Hua Zhang ◽  
Ai Ping Qian ◽  
Cao Jun Lv
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Temperature Distribution ◽  
Laser Beam ◽  
Laser Power ◽  
Liver Tumors ◽  
Normal Liver ◽  
Action Time ◽  
The Difference ◽  
Interstitial Thermotherapy

Propagation of 808nm wavelength laser beam in liver tumors was simulated with Monte Carlo method. Based on the distribution of light in normal liver and liver tumors, the temperature distribution inside tissue under laser irradiation has been retrieved. Furthermore, the influences of laser power and action time on the temperature field were studied. The results show that the normal liver and liver tumors have different light absorption with laser beam. The difference of temperature distribution in tissues with the same laser power is useful to be applied in control the treatment of laser-induced interstitial thermotherapy for liver tumors.

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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