Hall effect measurements of hole mobility in an inversion layer of a mos structure at low temperatures

AbstractWe have grown a number of InAs and GaSb bulk layers on GaAs substrates and studied the properties of the semiconductor films as a function of the various growth parameters. Preliminary results from GaSb growth are presented in addition to an extensive study of InAs growth. The films were characterized during growth by RHEED. RHEED-oscillations were observed during both InAs and GaSb growths. Hall effect measurements yielded peak electron mobilities for InAs of 18,900 cm2/Vs at 300 K and 35,000 cm2/Vs at 77 K. For GaSb the as grown layers were found to be p-type with a carrier concentration of 9x1015cm-3 and a hole mobility of 910 cm2 /Vs at 300 K.

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Conductivity and Hall-effect measurements on MBE GaAs grown at low temperatures

Proceedings of the 7th Conference on Semi-insulating III-V Materials, ◽

10.1109/sim.1992.752690 ◽

2005 ◽

Cited By ~ 1

Author(s):

D.C. Look ◽

G.D. Robinson ◽

J.R. Sizelove ◽

C.E. Stutz

Keyword(s):

Hall Effect ◽

Low Temperatures ◽

Hall Effect Measurements

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Residual Donors in P-SiC Films

MRS Proceedings ◽

10.1557/proc-97-253 ◽

1987 ◽

Vol 97 ◽

Cited By ~ 13

Author(s):

W. E. Carlos ◽

W. J. Moorea ◽

P. G. Siebenmann ◽

J. A. Freitas ◽

R. Kaplan ◽

...

Keyword(s):

Hall Effect ◽

Low Temperatures ◽

Temperature Dependent ◽

Acceptor Pair ◽

Spin Resonance ◽

Nitrogen Donor ◽

Donor Acceptor ◽

Hall Effect Measurements ◽

Donor Acceptor Pair ◽

Sic Films

ABSTRACTElectron Spin Resonance (ESR), temperature dependent Hall effect measurements and photoluminesence (PL) are used to examine the assumption that the residual donor in β-SiC films is nitrogen. At low temperatures the ESR has a three line isotropic spectrum which is characteristic of a central hyperfine interaction with nitrogen. The temperature dependence of the intensity of the nitrogen ESR signal correlates with the concentration of un-ionized donors measured by the Hall effect. Donor-Acceptor pair PL spectra are used to establish that the binding energy of the dominant donor in the films is the same as the nitrogen donor observed in Lely-grown samples. Neither PL nor ESR provide any evidence for the presence of a shallower donor.

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Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

Ibn AL- Haitham Journal For Pure and Applied Science ◽

10.30526/31.3.2023 ◽

2018 ◽

Vol 31 (3) ◽

pp. 20

Author(s):

Sarmad M. M. Ali ◽

Alia A.A. Shehab ◽

Samir A. Maki

Keyword(s):

Activation Energy ◽

Electrical Conductivity ◽

Hall Effect ◽

Carrier Concentration ◽

Hall Mobility ◽

Cu Doping ◽

Before And After ◽

Hall Effect Measurements ◽

Evaporation Technique ◽

P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but decreases by increasing Cu concentration.

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