The inversion effect of the strong electric field in the semiconductor with an impurity quantum well in the presence of the strong magnetic field

1994 ◽  
Vol 89 (2) ◽  
pp. 167-170 ◽  
Author(s):  
B.S. Monozon ◽  
A.N. Shalaginov
2015 ◽  
Vol 654 ◽  
pp. 268-273
Author(s):  
Chen Ning Zhang ◽  
Tetsuo Uchikoshi ◽  
Li Hong Liu ◽  
Benjamin Dierre ◽  
Yu Jin Cho ◽  
...  

Beta-sialon:Eu2+ phosphor deposits were fabricated by electrophoretic deposition (EPD) process within a strong magnetic field (12 T). The direction of the magnetic field was adjusted to be parallel or perpendicular to that of the electric field, that is, vertical-or horizontal setup. The oriented deposits were fabricated by aligning the β-sialon:Eu2+ particles along the higher magnetic-susceptibility c-crystal axis (a, b-crystal plane). For the case of vertically-setup magnetic field, the oriented deposit aligned along the c-axis possessed higher relative deposit density than the randomly fabricated deposit, as a result, varying the intensity ratio of emission and transmitted excitation, and therefore, presenting different chromaticity coordinates; for the case of horizontally-setup magnetic field, photoluminescence (PL) intensities of the deposits oriented along c-axis were significantly improved by comparing with those of the randomly-oriented ones.


1987 ◽  
Vol 38 (3) ◽  
pp. 351-371 ◽  
Author(s):  
Alf H. Øien

From the BBGKY equations for a pure electron plasma a derivation is made of a collision integral that includes the combined effects of particle gyration in a strong magnetic field and non-uniformities of both the distribution function and the self-consistent electric field on the collisional scale. A series expansion of the collision integral through the distribution function and the electric field on the collisional scale is carried out to third order in derivatives of the distribution function and to second order in derivatives of the electric field. For the strong-magnetic-field case when collision-term contributions to only first order in 1/B are included, a particle flux transverse to the magnetic field proportional to l/B2 is derived. The importance of long-range collective collisions in this process is shown. The result is in contrast with the classical l/B4 proportionality, and is in accordance with earlier studies.


2015 ◽  
Vol 48 (4) ◽  
pp. 421-423 ◽  
Author(s):  
A. David Buckingham

AbstractNuclear magnetic resonance is the most important form of molecular spectroscopy in chemistry and biochemistry but it is normally blind to chirality. It was predicted in 2004 that precessing nuclear spins in chiral molecules in a liquid in a strong magnetic field induce a rotating electric polarization that is of opposite sign for enantiomers. This polarization arises from the distortion of the electronic structure by the nuclear magnetic moment in the presence of the strong magnetic field and is equivalent to the linear effect of an electric field on the nuclear shielding tensor. The polarization is strongly enhanced in dipolar molecules through the partial orientation of the permanent dipole through the antisymmetric part of the nuclear magnetic shielding tensor. Alternatively, an applied electric field will induce a chirally sensitive magnetization perpendicular to the field and to the nuclear spin. Progress towards the experimental realization of chiral discrimination by NMR is assessed.


2020 ◽  
Vol 494 (2) ◽  
pp. 2385-2395 ◽  
Author(s):  
Pawan Kumar ◽  
Željka Bošnjak

ABSTRACT We present a model for fast radio bursts (FRBs) where a large-amplitude Alfvén wave packet is launched by a disturbance near the surface of a magnetar, and a substantial fraction of the wave energy is converted to coherent radio waves at a distance of a few tens of neutron star radii. The wave amplitude at the magnetar surface should be about 1011 G in order to produce an FRB of isotropic luminosity 1044 erg s−1. An electric current along the static magnetic field is required by Alfvén waves with non-zero component of transverse wave vector. The current is supplied by counter-streaming electron–positron pairs, which have to move at nearly the speed of light at larger radii as the plasma density decreases with distance from the magnetar surface. The counter-streaming pairs are subject to two-stream instability, which leads to formation of particle bunches of size of the order of c/ωp, where ωp is the plasma frequency. A strong electric field develops along the static magnetic field when the wave packet arrives at a radius where electron–positron density is insufficient to supply the current required by the wave. The electric field accelerates particle bunches along the curved magnetic field lines, and that produces the coherent FRB radiation. We provide a number of predictions of this model.


JETP Letters ◽  
2006 ◽  
Vol 84 (4) ◽  
pp. 222-225 ◽  
Author(s):  
V. V. Solov’ev ◽  
I. V. Kukushkin ◽  
J. H. Smet ◽  
K. von Klitzing ◽  
W. Dietsche

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2689-2692
Author(s):  
SERGEY VITKALOV ◽  
JING QIAO ZHANG ◽  
A. A. BYKOV ◽  
A. I. TOROPOV

Electric field induced, spectacular reduction of longitudinal resistivity of two dimensional electrons placed in strong magnetic field is studied in broad range of temperatures. The data are in good agreement with theory, considering the strong nonlinearity of the resistivity as result of non-uniform spectral diffusion of 2D electrons induced by the electric field. Comparison with the theory gives inelastic scattering time τin of the 2D electrons. In temperature range T = 2 - 20 K for overlapping Landau levels, the inelastic scattering rate 1/τin is found to be proportional to T2, indicating dominant contribution of the electron-electron interaction to the inelastic electron relaxation. At strong magnetic field, at which Landau levels are well separated, the inelastic scattering rate is proportional to T3 at high temperatures. We suggest the electron-phonon scattering as the dominant mechanism of the inelastic electron relaxation in this regime. At low temperature and separated Landau levels an additional regime of the inelastic electron relaxation is observed: τin ~ T-1.26.


2002 ◽  
Vol 744 ◽  
Author(s):  
Vladimir D. Kalganov ◽  
Nina V. Mileshkina ◽  
Elena V. Ostroumova ◽  
Ekaterina A. Rogacheva

ABSTRACTThe photo-field emission properties of semiconductors at a very strong electric field together with tunnel electron emission in metal-insulator-semiconductor heterostructures with a tunneltransparent layer of an insulator was studied. It was found that a self-consistent quantum well near the surface of semiconductor emitter tips can change the spectral region of photosensitivity of the radiation semiconductor field emitter detectors, and leads to the significant increase in their photosensitivity [1]. Also the appearance of a self-consistent quantum well near the semiconductor surface is the key factor which allows to use the metal-insulator heterojunction in the development of an Auger transistor based on the Al-SiO2-n-Si structure - the fastest operation semiconductor bipolar transistor [2–4]. Conditions for appearance of a self-consistent quantum well under strong electric field in both the near-surface region of a vacuum semiconductor field-emitter and metal-insulator-semiconductor heterostructures (Auger transistor) were studied also.


Sign in / Sign up

Export Citation Format

Share Document