An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

1962 ◽  
Vol 5 (5) ◽  
pp. 285-299 ◽  
Author(s):  
L.M. Terman
2003 ◽  
Vol 800 ◽  
Author(s):  
Brady J. Clapsaddle ◽  
Lihua Zhao ◽  
Alex E. Gash ◽  
Joe H. Satcher ◽  
Kenneth J. Shea ◽  
...  

ABSTRACTIn the field of composite energetic materials, properties such as ingredient distribution, particle size, and morphology, affect both sensitivity and performance. Since the reaction kinetics of composite energetic materials are typically controlled by the mass transport rates between reactants, one would anticipate new and potentially exceptional performance from energetic nanocomposites. We have developed a new method of making nanostructured energetic materials, specifically explosives, propellants, and pyrotechnics, using sol-gel chemistry. A novel sol-gel approach has proven successful in preparing metal oxide/silicon oxide nanocomposites in which the metal oxide is the major component. Two of the metal oxides are tungsten trioxide and iron(III) oxide, both of which are of interest in the field of energetic materials. Furthermore, due to the large availability of organically functionalized silanes, the silicon oxide phase can be used as a unique way of introducing organic additives into the bulk metal oxide materials. As a result, the desired organic functionality is well dispersed throughout the composite material on the nanoscale. By introducing a fuel metal into the metal oxide/silicon oxide matrix, energetic materials based on thermite reactions can be fabricated. The resulting nanoscale distribution of all the ingredients displays energetic properties not seen in its microscale counterparts due to the expected increase of mass transport rates between the reactants. The synthesis and characterization of these metal oxide/silicon oxide nanocomposites and their performance as energetic materials will be discussed.


1999 ◽  
Vol 568 ◽  
Author(s):  
Lahir Shaik Adam ◽  
Mark E. Law ◽  
Omer Dokumaci ◽  
Yaser Haddara ◽  
Cheruvu Murthy ◽  
...  

ABSTRACTNitrogen implantation can be used to control gate oxide thicknesses [1,2]. This study aims at studying the fundamental behavior of nitrogen diffusion in silicon. Nitrogen at sub-amorphizing doses has been implanted as N2+ at 40 keV and 200 keV into Czochralski silicon wafers. Furnace anneals have been performed at a range of temperatures from 650°C through 1050°C. The resulting annealed profiles show anomalous diffusion behavior. For the 40 keV implants, nitrogen diffuses very rapidly and segregates at the silicon/ silicon-oxide interface. Modeling of this behavior is based on the theory that the diffusion is limited by the time to create a mobile nitrogen interstitial.


2018 ◽  
Vol 36 (1) ◽  
pp. 01A116 ◽  
Author(s):  
Evan Oudot ◽  
Mickael Gros-Jean ◽  
Kristell Courouble ◽  
Francois Bertin ◽  
Romain Duru ◽  
...  

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1622-1626 ◽  
Author(s):  
K. Z. Zhang ◽  
Leah M. Meeuwenberg ◽  
Mark M. Banaszak Holl ◽  
F. R. McFeely

1996 ◽  
Vol 352-354 ◽  
pp. 1033-1037 ◽  
Author(s):  
O.A. Aktsipetrov ◽  
A.A. Fedyanin ◽  
E.D. Mishina ◽  
A.N. Rubtsov ◽  
C.W. van Hasselt ◽  
...  

1993 ◽  
Vol 36 (3) ◽  
pp. 33-36
Author(s):  
C. Werkhoven ◽  
E. Granneman ◽  
E. Lindow ◽  
R. de Blank ◽  
S. Verhavcrbeke ◽  
...  

This paper demonstrates that defect control is greatly improved when using the protected environment of a vertical reactor cluster tool comprising a preclean station. The cluster tool investigated combines the established process stability of vertical reactors with new capabilities as native oxide removal, ultraclean wafer transport, and reactors shielded from enviromental contamination. An adequate combination of clean gas usage and leak tightness makes it possible to apply HF vapor etching effectively in order to control the properties of the silicon-silicon oxide interface. For different precleaning conditions, interface and bulk contamination was measured, the sources identified, and the effect of improvements monitored. To this end, several electrical parameters were determined, including the analysis of Qhd and Ehd. Quantitative TXRF and SIMS techniques were used to correlate the results with metallic and organic contamination.


2003 ◽  
Vol 36 (6) ◽  
pp. 1352-1355 ◽  
Author(s):  
Benoît Bataillou ◽  
Hubert Moriceau ◽  
François Rieutord

It is shown here that the interfacial profile between two bonded wafers can be directly determined using X-ray reflectivity without resorting to standard model-fitting of the data. The phase problem inherent to any structure determination by scattering technique is solved in this case using a known silicon/silicon oxide interface, which acts as a phase reference for the reflected signals.


Sign in / Sign up

Export Citation Format

Share Document