Effective distribution coefficients of some group VI elements in indium phosphide grown by liquid phase epitaxy

ABSTRACTFe-doped semi-insul ati ng layers of InP, In0.48A10.52As,and In0.49Ga0.51P have been grown by liquid phase epitaxy for the first time. Behaviors of Fe doping in these materials have been well explained by the solubility of Fe in the growth solution and the temperature dependent distribution coefficients of Fe. It has been found that the distribution coefficients of Fe in the ternary alloys are much greater than those in InP.

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Investigation of Melt Carry‐Over during Liquid Phase Epitaxy: I . Growth of Indium Phosphide

Journal of The Electrochemical Society ◽

10.1149/1.2113755 ◽

1985 ◽

Vol 132 (1) ◽

pp. 172-176 ◽

Cited By ~ 7

Author(s):

R. B. Wilson ◽

P. Besomi ◽

R. J. Nelson

Keyword(s):

Liquid Phase ◽

Indium Phosphide ◽

Liquid Phase Epitaxy ◽

Carry Over

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Technological features of the method of liquid-phase epitaxy when growing InP/GaInAsP heterostructures

Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases ◽

10.17308/kcmf.2021.23/3528 ◽

2021 ◽

Vol 23 (3) ◽

pp. 374-379

Author(s):

Mikhail G. Vasil’ev ◽

Anton M. Vasil’ev ◽

Alexander D. Izotov ◽

Yuriy O. Kostin ◽

Alexey A. Shelyakin

Keyword(s):

Liquid Phase ◽

Indium Phosphide ◽

Liquid Phase Epitaxy ◽

Growth Surface ◽

Surface Compound ◽

Original Design ◽

Growth Processes ◽

Growth Defects ◽

Defective Surface ◽

Technological Study

Semiconductor devices of quantum electronics based on InP/GaInAsP heterostructures require the creation of non-defective chips for emitting devices and photodetectors. The production of such chips is impossible without a thorough technological study of the growth processes of epitaxial structures. One of the important problems in relation to the growth of such structures is the growth defects associated with the process of dissociation of indium phosphide on the surface during their growth. The aim of the work was the investigation of the process and mechanism of destruction (dissociation) of the surface of indium phosphide substrates in the range of growth temperatures of structures, as well as the study of methods andtechniques that allow minimize the process of dissociation of surface of indium phosphide.The work provides studies of the growth processes of InP/GaInAsP heterostructures, from the liquid phase, taking into account the degradation processes of the growth surface and the mechanisms for the formation of dissociation defects.The schemes of the dissociation process of the InP on the surface of the substrate and the formation of the defective surface of the substrate were analysed. At the same time, technological methods allowing to minimize the dissociation of the surface compound during the process of liquid-phase epitaxy were shown. The original design of a graphite cassette allowing to minimize the dissociation of the indium phosphide substrate in the process of liquid-phase epitaxy was proposed

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Growing epitaxial layers of InP/InGaAsP heterostructures on the profiled InP surfaces by liquid-phase epitaxy

Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases ◽

10.17308/kcmf.2021.23/3430 ◽

2021 ◽

Vol 23 (2) ◽

pp. 204-211

Author(s):

Mikhail G. Vasil’ev ◽

Anton M. Vasil’ev ◽

Alexander D. Izotov ◽

Yuriy O. Kostin ◽

Alexey A. Shelyakin

Keyword(s):

Liquid Phase ◽

Indium Phosphide ◽

Dissolution Rate ◽

Liquid Phase Epitaxy ◽

Chemical Etching ◽

Laser Diodes ◽

Epitaxial Layers ◽

The Difference ◽

Inp Substrates ◽

Selection Of

The effect of various planes was studied when growing epitaxial layers by liquid-phase epitaxy (LPE) on the profiled InP substrates. The studies allowed obtaining buried heterostructures in the InP/InGaAsP system and creating highly efficient laser diodes and image sensors.It was found that protruding mesa strips or in-depth mesa strips in the form of channels formed by the {111}А, {111}B, {110}, {112}A, or {221}A family of planes can be obtained with the corresponding selection of an etching agent, strip orientation, and a method of obtaining a masking coating. It was noted that in the case of the polarity of axes being in the direction of <111>, the cut of mesa strips was conducted along the most densely packaged planes. This cut led to the difference in rates of both chemical etching and epitaxial burying of profiled surfaces.The cut was made along the planes at a low dissolution rate {111}A for a sphalerite lattice, to which the studied material, indium phosphide, belongs. Analysis of planes {110} and {Ī10} showed that the location of the most densely packaged planes {111}A and {111}B relative to them is different.

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