Transient behavior of flat-band voltage during hydrogen and deuterium adsorption on Pd-gate MOS structures

AbstractWe have carried out a comparison between flat-band transients displayed in metal-oxide-semiconductor (MOS) structures fabricated on several atomic layer deposited (ALD) high-k dielectric films: HfO2, ZrO2, Al2O3, Ta2O5, TiO2, and Gd2O3. The gate voltage as a function of time is recorded while keeping constant the capacitance at the initial flat band condition (CFB). Since samples are in darkness, under no electric fields and no charge-injection conditions, transients must be due to charge trapping of localized states produced by electrons (holes) coming from the semiconductor by tunnelling. The process is assisted by phonons and it is therefore thermally activated. The temperature-transient amplitude relation follows an Arrhenius plot which provides the thermal activation energy of soft-optical phonons. Finally, we describe the dependencies of the flat-band voltage on the setup bias history (accumulation or inversion) and the hysteresis sign (clockwise or counter-clockwise) of the capacitance-voltage (C-V) characteristics of MOS structures.

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Process-Dependent Charges and Traps in Dielectrics on SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.995 ◽

2006 ◽

Vol 527-529 ◽

pp. 995-998

Author(s):

Bharat Krishnan ◽

Hrishikesh Das ◽

Yaroslav Koshka ◽

Igor Sankin ◽

P.A. Martin ◽

...

Keyword(s):

Charge Injection ◽

Charge Trapping ◽

Transient Behavior ◽

Flat Band ◽

Interface Traps ◽

Flat Band Voltage ◽

Applied Bias ◽

Voltage Drift ◽

Charge Stability ◽

Processing Techniques

Dielectric charges and charge stability were compared in different dielectrics formed on SiC by different processing techniques. The concentration and transient behavior of the interface and trapped charges were investigated. Strong hysteresis and flat-band voltage drift under applied bias were observed in some of the samples. They are attributed to the trapping of the charge injected in the dielectrics. Differences in charge injection, charge trapping, and capture/emission of carriers by interface traps were pronounced for the investigated SiO2 and Si3N4 dielectrics.

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Single electrode potentials related to flat‐band voltage measurements on EOS and MOS structures

The Journal of Chemical Physics ◽

10.1063/1.442812 ◽

1982 ◽

Vol 76 (10) ◽

pp. 5128-5133 ◽

Cited By ~ 39

Author(s):

Luc Bousse

Keyword(s):

Flat Band ◽

Flat Band Voltage ◽

Electrode Potentials ◽

Mos Structures

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Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.470.135 ◽

2011 ◽

Vol 470 ◽

pp. 135-139 ◽

Cited By ~ 2

Author(s):

Naoya Morisawa ◽

Mitsuhisa Ikeda ◽

Katsunori Makihara ◽

Seiichi Miyazaki

Keyword(s):

Quantum Dots ◽

Electron Tunneling ◽

Floating Gate ◽

Light Irradiation ◽

Flat Band ◽

Flat Band Voltage ◽

Si Substrate ◽

Mos Capacitors ◽

Mos Structures ◽

Si Quantum Dots

We have studied the effect of 1310 nm light irradiation on the charge distribution of a hybrid floating gate consisting of silicon quantum dots (Si-QDs) and NiSi Nanodots (NiSi-NDs) in MOS capacitors. The light irradiation resulted in reduced flat-band voltage shifts of the MOS capacitors in comparison to the shift in the dark. This result can be interpreted in terms of the shift of the charge centroid toward the gate side in the hybrid floating gate caused by the photoexcitation of electrons in NiSi-NDs and the subsequent electron tunneling to Si-QDs. The capacitance of the MOS capacitors at constant gate biases was modulated with pulsed light irradiation. When the light irradiation was turned off, capacitance recovered to its level in the dark, indicating that the photoexited charges were transferred between the Si-QDs and the NiSi-NDs without being emitted to the Si substrate and gate electrode.

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