On the flat-band voltage of MOS structures on nonuniformly doped substrates

1984 ◽  
Vol 27 (8-9) ◽  
pp. 824-826 ◽  
Author(s):  
F. Van de Wiele
Keyword(s):  
Flat Band ◽  
Flat Band Voltage ◽  
Mos Structures

Electrical Characterization of High-k Dielectrics by Means of Flat-Band Voltage Transient Recording

2007 ◽  
Vol 996 ◽  
Author(s):  
Salvador Duenas ◽  
Helena Castán ◽  
Héctor García ◽  
Luis Bailón ◽  
Kaupo Kukli ◽  
...  
Keyword(s):  
Electric Fields ◽  
Electrical Characterization ◽  
Charge Trapping ◽  
Atomic Layer ◽  
Localized States ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Flat Band Voltage ◽  
High K ◽  
Mos Structures

AbstractWe have carried out a comparison between flat-band transients displayed in metal-oxide-semiconductor (MOS) structures fabricated on several atomic layer deposited (ALD) high-k dielectric films: HfO2, ZrO2, Al2O3, Ta2O5, TiO2, and Gd2O3. The gate voltage as a function of time is recorded while keeping constant the capacitance at the initial flat band condition (CFB). Since samples are in darkness, under no electric fields and no charge-injection conditions, transients must be due to charge trapping of localized states produced by electrons (holes) coming from the semiconductor by tunnelling. The process is assisted by phonons and it is therefore thermally activated. The temperature-transient amplitude relation follows an Arrhenius plot which provides the thermal activation energy of soft-optical phonons. Finally, we describe the dependencies of the flat-band voltage on the setup bias history (accumulation or inversion) and the hysteresis sign (clockwise or counter-clockwise) of the capacitance-voltage (C-V) characteristics of MOS structures.

Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures

2011 ◽  
Vol 470 ◽  
pp. 135-139 ◽  
Author(s):  
Naoya Morisawa ◽  
Mitsuhisa Ikeda ◽  
Katsunori Makihara ◽  
Seiichi Miyazaki
Keyword(s):  
Quantum Dots ◽  
Electron Tunneling ◽  
Floating Gate ◽  
Light Irradiation ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Si Substrate ◽  
Mos Capacitors ◽  
Mos Structures ◽  
Si Quantum Dots

We have studied the effect of 1310 nm light irradiation on the charge distribution of a hybrid floating gate consisting of silicon quantum dots (Si-QDs) and NiSi Nanodots (NiSi-NDs) in MOS capacitors. The light irradiation resulted in reduced flat-band voltage shifts of the MOS capacitors in comparison to the shift in the dark. This result can be interpreted in terms of the shift of the charge centroid toward the gate side in the hybrid floating gate caused by the photoexcitation of electrons in NiSi-NDs and the subsequent electron tunneling to Si-QDs. The capacitance of the MOS capacitors at constant gate biases was modulated with pulsed light irradiation. When the light irradiation was turned off, capacitance recovered to its level in the dark, indicating that the photoexited charges were transferred between the Si-QDs and the NiSi-NDs without being emitted to the Si substrate and gate electrode.

Transient behavior of flat-band voltage during hydrogen and deuterium adsorption on Pd-gate MOS structures

1985 ◽  
Vol 28 (9) ◽  
pp. 867-873 ◽  
Author(s):  
A. Nannini ◽  
P.E. Bagnoli ◽  
A. Diligenti ◽  
V. Ciuti
Keyword(s):  
Transient Behavior ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Mos Structures

Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature

2020 ◽  
Vol 13 (11) ◽  
pp. 111006
Author(s):  
Li-Chuan Sun ◽  
Chih-Yang Lin ◽  
Po-Hsun Chen ◽  
Tsung-Ming Tsai ◽  
Kuan-Ju Zhou ◽  
...  
Keyword(s):  
Low Temperature ◽  
Trap Density ◽  
Flat Band ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Flat Band Voltage ◽  
Voltage Shift

Radiation Hardness for Silicon Oxide and Aluminum Oxide on 4H-SiC

2018 ◽  
Vol 924 ◽  
pp. 229-232 ◽  
Author(s):  
Anders Hallén ◽  
Sethu Saveda Suvanam
Keyword(s):  
Proton Irradiation ◽  
Silicon Oxide ◽  
Positive Charge ◽  
Gate Dielectric ◽  
Radiation Hardness ◽  
Flat Band ◽  
Capacitance Voltage ◽  
Cv Measurements ◽  
Radiation Hard ◽  
Mos Structures

The radiation hardness of two dielectrics, SiO2and Al2O3, deposited on low doped, n-type 4H-SiC epitaxial layers has been investigated by exposing MOS structures involving these materials to MeV proton irradiation. The samples are examined by capacitance voltage (CV) measurements and, from the flat band voltage shift, it is concluded that positive charge is induced in the exposed structures detectable for fluence above 1×1011cm-2. The positive charge increases with proton fluence, but the SiO2/4H-SiC structures are slightly more sensitive, showing that Al2O3can provide a more radiation hard passivation, or gate dielectric for 4H-SiC devices.

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