scholarly journals Hysteresis effect during reactive sputtering

2021 ◽  
Vol 2059 (1) ◽  
pp. 012021
Author(s):  
V I Shapovalov

Abstract In this work, we studied the effect of constant parameters of the sputtering system on the width of the hysteresis loop during reactive sputtering. The sticking coefficient of the reactive gas to the surface, the chamber pumping speed, the target area, etc. are taken as parameters. The comparative study was carried out by numerical solution of systems of algebraic equations describing the chemisorption and physicochemical models of metal target reactive sputtering in a single reactive gas. The calculations were performed for sputtering a tantalum target in an Ar + O2 mixture. The studied dependences were non-linear in all cases.

Nanoscale ◽  
2018 ◽  
Vol 10 (8) ◽  
pp. 3823-3837 ◽  
Author(s):  
F. Ehré ◽  
C. Labbé ◽  
C. Dufour ◽  
W. M. Jadwisienczak ◽  
J. Weimmerskirch-Aubatin ◽  
...  

Ce-Doped SiOxNy films are deposited by magnetron reactive sputtering from a CeO2 target under a nitrogen reactive gas atmosphere.


1993 ◽  
Vol 230 (2) ◽  
pp. 121-127 ◽  
Author(s):  
E.J.-Bienk ◽  
H. Jensen ◽  
G.N. Pedersen ◽  
G. Sørensen

2002 ◽  
Vol 749 ◽  
Author(s):  
Pushkar Jain ◽  
Jasbir S. Juneja ◽  
Tansel Karabacak ◽  
Eugene J. Rymaszewski ◽  
Toh –Ming Lu

ABSTRACTThe growth front roughness of Ta2O5 amorphous films grown by pulsed plasma d.c. reactive sputtering has been investigated using atomic force microscopy. Film deposition during reactive sputter deposition is explained based on dynamic scaling hypothesis in which both time and space scaling are considered simultaneously. The interface width w increases as a power law with deposition time t, w ∼ tβ, with β = 0.45 ± 0.03. The lateral correlation length ξ grows as ξ ∼ t1/z, with 1/z = 0.61 ± 0.07. The roughness exponent extracted from the slope of height-height correlation analysis is α = 0.79 ± 0.04. The results are similar to that obtained by sputtering of elemental materials, and do not fit to any of the presently known growth models. Monte Carlo simulations were carried out based on a recently developed re-emission model, where incident flux distribution, shadowing, sticking coefficient, and surface diffusion mechanisms were accounted for in the deposition process. An important finding is that sticking coefficient must be less than unity to obtain the observed β value (∼0.45).


2007 ◽  
Vol 201 (18) ◽  
pp. 7727-7732 ◽  
Author(s):  
N. Martin ◽  
J. Lintymer ◽  
J. Gavoille ◽  
J.M. Chappé ◽  
F. Sthal ◽  
...  

2016 ◽  
Vol 44 (12) ◽  
pp. 3028-3031
Author(s):  
A. I. Kuzmichev ◽  
V. I. Ivashchenko ◽  
V. V. Perevertailo ◽  
P. L. Skrynskyi

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