Studies of current-voltage characteristics of antimony oxide films

Vacuum ◽  
1985 ◽  
Vol 35 (8) ◽  
pp. 343
Keyword(s):  
Oxide Films ◽  
Antimony Oxide ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals Солнечно-слепые детекторы УФ-излучения на основе пленок beta-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-

2020 ◽  
Vol 54 (6) ◽  
pp. 575
Author(s):  
В.М. Калыгина ◽  
А.В. Алмаев ◽  
В.А. Новиков ◽  
Ю.С. Петрова
Keyword(s):  
Phase Composition ◽  
Wavelength Range ◽  
Gallium Oxide ◽  
Oxide Films ◽  
Platinum Electrodes ◽  
Sapphire Substrates ◽  
Visible Wavelength Range ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Resistive Type

Resistive-type structures based on gallium oxide films were studied. Ga2O3 films were obtained by radio-frequency magnetron-assisted sputtering of a β-Ga2O3 (99.9999%) target onto unheated sapphire substrates with pre-deposited platinum electrodes. The structure and phase composition of the gallium-oxide films were determined. The current–voltage characteristics of the samples without and with exposure to radiation at the wavelengths λ = 254 nm were measured. It was shown that after annealing, the photocurrent increases by an order. The absence of sensitivity of the studied structures to radiation in the visible wavelength range was experimentally confirmed.

STRUCTURAL AND ELECTRICAL PROPERTIES OF RF MAGNETRON SPUTTERED TANTALUM OXIDE FILMS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 749-753
Author(s):  
S. V. JAGADEESH CHANDRA ◽  
D. S. PARK ◽  
S. UTHANNA ◽  
CHEL-JONG CHOI ◽  
A. GURUVA REDDY
Keyword(s):  
Tantalum Oxide ◽  
Oxide Films ◽  
Rf Magnetron Sputtering ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage ◽  
Structural And Electrical Properties ◽  
Current Voltage Characteristics ◽  
P Type

RF magnetron sputtering technique was employed for deposition of tantalum oxide films on p-type silicon substrates by sputtering of pure tantalum oxide target in the presence of oxygen and argon gases at a temperature of 303 K. X-ray photoelectron spectroscopic and X-ray diffraction studies indicated that the films annealed at 773 K were stoichiometric and polycrystalline respectively. The accumulation capacitance for the devices in a structure of Al/Ta2O5/p-Si has been decreased noticeably lower values for the devices annealed at high temperatures. Improved current–voltage characteristics were observed for all annealed devices with Poole–Frenkel conduction mechanism.

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