scholarly journals In situ study of cascade defects in silver by simultaneous transmission electron microscopy and electrical resistivity measurements at low temperatures

1986 ◽  
Vol 16 (2-3) ◽  
pp. 134-142 ◽  
Author(s):  
K. Haga ◽  
Wayne E. King ◽  
K.L. Merkle ◽  
M. Meshii
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electrical Resistivity ◽  
Low Temperatures ◽  
Resistivity Measurements ◽  
In Situ Study ◽  
Transmission Electron ◽  
Simultaneous Transmission

In Situ Study of Spinel Ferrite Nanocrystal Growth Using Liquid Cell Transmission Electron Microscopy

2015 ◽  
Vol 27 (23) ◽  
pp. 8146-8152 ◽  
Author(s):  
Wen-I Liang ◽  
Xiaowei Zhang ◽  
Karen Bustillo ◽  
Chung-Hua Chiu ◽  
Wen-Wei Wu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Spinel Ferrite ◽  
In Situ Study ◽  
Nanocrystal Growth ◽  
Transmission Electron ◽  
Cell Transmission ◽  
Liquid Cell

In Situ Study of Lithiation and Delithiation of MoS2 Nanosheets Using Electrochemical Liquid Cell Transmission Electron Microscopy

Nano Letters ◽  
2015 ◽  
Vol 15 (8) ◽  
pp. 5214-5220 ◽  
Author(s):  
Zhiyuan Zeng ◽  
Xiaowei Zhang ◽  
Karen Bustillo ◽  
Kaiyang Niu ◽  
Christoph Gammer ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Mos2 Nanosheets ◽  
In Situ Study ◽  
Transmission Electron ◽  
Cell Transmission ◽  
Liquid Cell

Transmission Electron Microscopy and Resistivity Measurements on Pd1−x Six Alloys Prepared by Ion Implantation.

1981 ◽  
Vol 7 ◽  
Author(s):  
A. Traverse ◽  
M.O. Ruault ◽  
L. Mendoza-Zelis ◽  
M. Schack ◽  
H. Bernas ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Temperature Dependence ◽  
Amorphous State ◽  
Dose Dependence ◽  
Preliminary Evidence ◽  
Resistivity Measurements ◽  
Transmission Electron

ABSTRACTAfter 6K implantation of Si in Pd films, resistivity measurements (previously reported (1)) had provided preliminary evidence that an amorphous state had been reached for a composition Pd.80 SiO 20· This result has been recently confirmed by transmission electron microscopy (TEM) observations : diffuse diffraction rings appear in the implanted part of the Pd film. New experiments are reported : - resistivity dose dependence (and temperature dependence) of a 300K Si implanted Pd film ; - in situ TEM experiments to follow the amorphization process during implantation.

Ion Beam Induced Crystallization of Amorphous Si from NiSi2 Precipitates: An In Situ Study

1992 ◽  
Vol 279 ◽  
Author(s):  
F. Fortuna ◽  
M. -O. Ruault ◽  
H. Bernas ◽  
H. Gu ◽  
C. Colliex
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Beam ◽  
In Situ Study ◽  
Transmission Electron ◽  
Interface Roughening ◽  
Amorphous Si ◽  
Induced Crystallization ◽  
Growth Shape

ABSTRACTBy first growing NiSi2 precipitates in a-Si and then irradiating with a 150 keV Si beam, we have studied ion beam induced epitaxial crystallization (IBIEC) of Si initiated at a-Si/NiSi2 precipitate interfaces. The growth shape and its temperature dependence are studied in-beam via in situ transmission electron microscopy. Interface roughening is evidenced. Preliminary results for the Co-Si system are also reported.

The Influence of Iron on the Physical and Mechanical Properties of β-Nial

1994 ◽  
Vol 364 ◽  
Author(s):  
Y. J. Lim ◽  
K. T. Hong ◽  
V. Levit ◽  
M. J. Kaufmann
Keyword(s):  
Electron Microscopy ◽  
Mechanical Properties ◽  
Transmission Electron Microscopy ◽  
Electrical Resistivity ◽  
Magnetic Susceptibility ◽  
Low Temperatures ◽  
Physical And Mechanical Properties ◽  
The Other ◽  
Resistivity Data ◽  
Transmission Electron

AbstractThe influence of iron on the the microstructure and properties of B2 NiAl has been investigated using electrical resistivity, magnetic susceptibility, microhardness and transmission electron microscopy. The resistivity data suggest that quenched-in vacancies (1) enhance iron rearrangement at low temperatures (600–800 K) and (2) annihilate above 800 K. These effects depend strongly on Ni/Al ratio and are greatest for Ni/Al=1. It is also shown that these data correlate directly with the results obtained using the other experimental techniques.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

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