Passivation of recombination centers on WSe2; a SEM/EBIC investigation

Defects, inevitably produced in the solution-processed halide perovskite films, can act as charge carrier recombination centers to induce severe energy loss in perovskite solar cells (PSCs). Suppressing these trap states...

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n-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centers

Applied Physics Letters ◽

10.1063/5.0035343 ◽

2021 ◽

Vol 118 (2) ◽

pp. 021102

Author(s):

Dong-Pyo Han ◽

Ryoto Fujiki ◽

Ryo Takahashi ◽

Yusuke Ueshima ◽

Shintaro Ueda ◽

...

Keyword(s):

Radiative Recombination ◽

Light Emitting Diode ◽

Green Light ◽

Light Emitting ◽

Recombination Centers

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Effect of Interface States on the Open-Circuit Volatage in a-Si:H/c-Si Heterojunction Solar Cells

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.485.454 ◽

2012 ◽

Vol 485 ◽

pp. 454-456

Author(s):

Lan E Luo ◽

Chun Liang Zhong

Keyword(s):

Open Circuit Voltage ◽

Minority Carrier ◽

Interface States ◽

Open Circuit ◽

Band Offset ◽

Heterojunction Solar Cells ◽

Conduction Band Offset ◽

Photovoltaic Application ◽

Critical Issues ◽

Recombination Centers

The properties of the a-Si:H/c-Si interface are one of the critical issues for the photovoltaic application. The effects of the interface states on the open-circuit voltage VOC were performed by a set of simulations. VOC decreases with Dit increasing, especially at high values of Dit, since the interface states act as recombination centers to decrease the excess minority carrier density in c-Si. Since the conduction band offset ∆EC can saturate part of interface states, VOC increasing with ∆EC increasing.

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Radiation induced recombination centers in organic solar cells

Physical Review B ◽

10.1103/physrevb.85.205211 ◽

2012 ◽

Vol 85 (20) ◽

Cited By ~ 55

Author(s):

R. A. Street ◽

J. E. Northrup ◽

B. S. Krusor

Keyword(s):

Solar Cells ◽

Organic Solar Cells ◽

Radiation Induced ◽

Recombination Centers

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Recombination centers inGaAs/Al0.4Ga0.6Asheterostructures investigated by optically and electrically detected magnetic resonance

Physical Review B ◽

10.1103/physrevb.58.4892 ◽

1998 ◽

Vol 58 (8) ◽

pp. 4892-4902 ◽

Cited By ~ 7

Author(s):

T. Wimbauer ◽

M. S. Brandt ◽

M. W. Bayerl ◽

N. M. Reinacher ◽

M. Stutzmann ◽

...

Keyword(s):

Magnetic Resonance ◽

Electrically Detected Magnetic Resonance ◽

Recombination Centers

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High-Spatial-Resolution Cathodoluminescence Measurement of InGaN

MRS Proceedings ◽

10.1557/proc-743-l3.52 ◽

2002 ◽

Vol 743 ◽

Author(s):

Hisashi Kanie ◽

Hiroaki Okado ◽

Takaya Yoshimura

Keyword(s):

Electron Microscope ◽

Energy Level ◽

Spatial Resolution ◽

Diffusion Length ◽

High Spatial Resolution ◽

Lower State ◽

Measuring Apparatus ◽

Bulk Crystals ◽

Recombination Centers ◽

Scanning Electron

ABSTRACTThis paper described observation of cathodoluminescence (CL) of microcrystalline InGaN bulk crystals under a scanning electron microscope (SEM) with a high-spatial-resolution (HR) CL measuring apparatus. HR-CL spectra from facets of InGaN crystals vary from facet to facet and are single peaked. Histogram analysis of the CL peak positions of HR spectra from the facets of the crystals in the area scanned during a low-resolution CL measurement shows a two-peaked form with comparable peak wavelengths. The diffusion length of a generated electron- ho le pair or an exciton from the recombination centers with a higher-energy-level state to that with a lower state is estimated to be 500 nm at the longest by the comparison of two monochromatic HR-CL images of adjoining facets.

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Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

MRS Proceedings ◽

10.1557/proc-4-689 ◽

1981 ◽

Vol 4 ◽

Cited By ~ 2

Author(s):

Douglas H. Lowndes ◽

Bernard J. Feldman

Keyword(s):

Radiative Recombination ◽

Laser Annealing ◽

Laser Energy ◽

Pulsed Laser ◽

High Dose ◽

Pulsed Laser Annealing ◽

Recombination Centers ◽

Pl Intensity ◽

P Type ◽

Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

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Recombination centers in as-grown and electron-irradiated ZnO substrates

Journal of Applied Physics ◽

10.1063/1.2802186 ◽

2007 ◽

Vol 102 (9) ◽

pp. 093504 ◽

Cited By ~ 16

Author(s):

N. T. Son ◽

I. G. Ivanov ◽

A. Kuznetsov ◽

B. G. Svensson ◽

Q. X. Zhao ◽

...

Keyword(s):

Recombination Centers

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LBIC investigation of the dynamic behavior of trapping-recombination centers

10.1117/12.238144 ◽

1996 ◽

Cited By ~ 2

Author(s):

Bogdan Paszkiewicz ◽

A. Romanowski ◽

Regina Paszkiewicz ◽

Marek Panek ◽

Marek J. Tlaczala ◽

...

Keyword(s):

Dynamic Behavior ◽

Recombination Centers

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Two Carrier Sensitization as a Spectroscopic Tool for a-Si:H

MRS Proceedings ◽

10.1557/proc-557-439 ◽

1999 ◽

Vol 557 ◽

Cited By ~ 4

Author(s):

L.F. Fonseca ◽

S.Z. Weisz ◽

R. Rapaport ◽

I. Balberg

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Thermal Quenching ◽

Minority Carrier Lifetime ◽

Dangling Bond ◽

Recent Letter ◽

Recombination Centers ◽

Spectroscopic Tool ◽

Hydrogenated Amorphous ◽

Effect Of Light

AbstractIn a recent letter we have reported the first observation of the phenomenon of minority carrier-lifetime sensitization in hydrogenated amorphous silicon (a-Si:H). We find now that combining the study of this phenomenon with the study of the well-known phenomenon of majority carrier lifetime sensitization, in this material, can provide direct information on its density of states (DOS) distribution. This finding is important in view of the limitations associated with other methods designed for the same purpose. We have carried out then an experimental study of the effect of light soaking on the phototransport in a-Si:H. We found that the increase of the dangling bond concentration with light soaking affects the sensitization and thermal quenching of the majority carriers lifetime. Using computer simulations, we further show that the details of the observations associated with the sensitization effect yield semiquantitative information on the concentration and character of the recombination centers in a-Si:H.

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