Concentration profiles and electrical characterization of high energy phosphorus implants in 〈100〉 silicon

1991 ◽  
Vol 10 (1) ◽  
pp. 67-73 ◽  
Author(s):  
G. Galvagno ◽  
A. Cacciato ◽  
F. Benyaïch ◽  
V. Raineri ◽  
F. Priolo ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
High Energy ◽  
Concentration Profiles

Electrical Characterization Of Defects Introduced During Plasma-Based Processing Of GaAs

1996 ◽  
Vol 442 ◽  
Author(s):  
F. D. Auret ◽  
G. Myburg ◽  
W. E. Meyer ◽  
P. N. K. Deenapanray ◽  
H. Nordhoff ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Electrical Characterization ◽  
Ion Bombardment ◽  
High Energy ◽  
Wet Etching ◽  
Low Energy ◽  
Characteristic Set ◽  
Si Doped ◽  
Metastable Defect

AbstractDLTS revealed that each plasma type (He and SiCl4) introduced its own characteristic set of defects. Some of the defects created during He processing and one defect introduced by SiCl4 etching had identical electronic properties to those introduced during high energy (MeV) He ion bombardment. SiC14etching introduced only two prominent defects, one of which is metastable with electronic properties similar to a metastable defect previously reported in high and low energy He-ion bombardment of Si-doped GaAs. IV measurements demonstrated that the characteristics of SBDs fabricated on He-ion processed surfaces were very poor compared to those of control diodes (diodes fabricated on surfaces cleaned by conventional wet etching). In contrast, the properties of SBDs fabricated on SiCl4 etched surfaces were as good as, and in some cases superior to, those of control diodes. SBDs fabricated on annealed (at 450°C for 30 minutes) He-processed samples exhibited improved but still poor rectification. In contrast, SBDs fabricated on annealed SiCl4 etched surfaces had virtually the same characteristics as those fabricated on unannealed SiCl4 etched samples.

Electrical Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior

2003 ◽  
Vol 764 ◽  
Author(s):  
M. Ahoujja ◽  
H. C. Crocket ◽  
M. B. Scott ◽  
Y.K. Yeo ◽  
R. L. Hengehold
Keyword(s):  
Proton Irradiation ◽  
Deep Level ◽  
Electrical Characterization ◽  
Complete Recovery ◽  
High Energy ◽  
Curve Fit ◽  
Higher Temperature ◽  
Transient Spectroscopy ◽  
Anneal Temperature

AbstractWe report on the electrical properties of defects introduced in epitaxial 4H-SiC by 2 MeV protons using deep level transient spectroscopy (DLTS). After proton irradiation with a dose of about 1.5×1014 cm-2, the DLTS measurements were made, and the rate window shows a single broad peak between 280 and 310 K. The intensity of this peak remains unchanged after a thermal anneal at 900°C for 20 min. However, after annealing at or above 1100°C, the peak intensity gradually decreases with anneal temperature up to 1500°C, indicating a decrease in the defect concentration. Because a complete damage recovery of the SiC is not observed even after annealing at 1500°C, we believe a higher temperature annealing is necessary for a complete recovery. Using a curve fit analysis, a set of deep levels of defect centers were found with energy ranging between 567 and 732 meV. These traps do not exhibit a significant change in the trap energy or capture cross-section parameters as a function of anneal temperature, but the decrease in the trap density with increasing anneal temperature demonstrates a damage recovery.

FABRICATION OF GaN HOMO-JUNCTION ON Si (111) SUBSTRATE FOR SENSOR APPLICATIONS

2013 ◽  
Vol 01 (01) ◽  
pp. 1250006 ◽  
Author(s):  
M. Z. MOHD YUSOFF ◽  
Z. HASSAN ◽  
C. W. CHIN ◽  
H. ABU HASSAN ◽  
M. J. ABDULLAH ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
High Energy ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Raman Analysis ◽  
Sensor Applications ◽  
Current Voltage ◽  
Good Optical Quality

In this paper, we investigated growth of GaN pn-homo junction layers on silicon (111) by plasma-assisted molecular beam epitaxy (PA-MBE) system and its application for photo-sensors. Silicon (Si) and magnesium (Mg) were used in this study as n- and p-dopants, respectively. Structural and optical analysis of the GaN homo-junction samples were performed by using reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), Raman spectroscopy and photoluminescence (PL) to analyze the crystalline quality of the samples. Surprisingly, the Raman analysis has revealed that there is no quenching of the A1 (LO) peak, with the presence of Si - and Mg -dopants in sample. The pn-junctions sample has good optical quality as measured by the PL system. Electrical characterization of the photo-sensors was carried out by using current–voltage (I–V) measurements.

Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation

1998 ◽  
Vol 537 ◽  
Author(s):  
S. A. Goodman ◽  
F. D. Auret ◽  
F. K. Koschnick ◽  
J.-M. Spaeth ◽  
B. Beaumont ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
Emission Rate ◽  
Ion Irradiation ◽  
Deep Level ◽  
Electrical Characterization ◽  
Ion Bombardment ◽  
High Energy ◽  
Electron Traps ◽  
Transient Spectroscopy

AbstractWe report on the electrical properties of defects as determined by deep level transient spectroscopy (DLTS) introduced in epitaxially grown n-GaN by 2.0 MeV protons and 5.4 MeV He-ions. After He-ion bombardment three electron traps ER3 (Ec - 0.196 eV), ER4 (Ec - 0.78 eV), and ER5 (Ec - 0.95 eV) were introduced uniformly in the region profiled by DLTS with introduction rates of 3270 ± 200, 1510 ± 300, and 3030 ± 500 cm-1 respectively. Capture cross section measurements revealed that the electron capture kinetics of ER5 is similar to that of a line defect. A defect with similar electronic properties as ER3 is observed after 2.0 MeV proton irradiation. The emission rate of ER3 depends on the electric field strength in the space-charge region. This emission rate is modelled according to the Poole-Frenkel distortion of a square well with a radius of 20 ± 2 Å or alternatively, a Gaussian well with a characteristic width of 6.0 ± 1 Å. Hence, we conclude that ER1 is a point defect which appears to have an acceptor like character. Two additional electron traps, ER1 (Ec -0.13 eV) and ER2 (Ec - 0.16eV) with introduction rates of 30 ± 10 and 600 ± 100 cm-1 not thusfar observed after electron or He-ion bombardment were observed after proton irradiation.

Electrical Characteristics of GaAs Implanted with High Energy (100 MeV) 28Si and 120Sn Ions

2014 ◽  
Vol 661 ◽  
pp. 3-7
Author(s):  
Yousuf Pyar Ali ◽  
Arun M. Narsale ◽  
Brij Mohan Arora
Keyword(s):  
Electrical Conduction ◽  
Conduction Mechanism ◽  
Electrical Characterization ◽  
High Energy ◽  
The Other ◽  
Electrical Characteristics ◽  
Defect States ◽  
Temperature Range ◽  
Current Voltage

In this work we carried out electrical characterization of n-GaAs implanted at 300 K with high energy (100 MeV)28Si and120Sn ions to a fluence of 1x1018ions/m2using current–voltage (I-V) measurements. The as implanted samples and samples annealed in the temperature range 373-1123 K have been investigated. Resistance of the samples obtained from I-V curves recorded over the temperature range 110K-270K indicate that the samples implanted with28Si and annealed up to 623 K and the samples implanted with120Sn and annealed up to 723K shows tunnel assisted hoping conduction mechanism. In the other hand,28Si implanted samples annealed to 723K and 823K and120Sn implanted samples annealed to 823K and 923K the electrical conduction mechanism is dominated by thermal hoping between closed defect states.

scholarly journals Electrical Characterization of High Energy Electron Irradiated Ni/4H-SiC Schottky Barrier Diodes

2016 ◽  
Vol 45 (8) ◽  
pp. 4177-4182 ◽  
Author(s):  
A. T. Paradzah ◽  
E. Omotoso ◽  
M. J. Legodi ◽  
F. D. Auret ◽  
W. E. Meyer ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Electrical Characterization ◽  
High Energy ◽  
Energy Electron ◽  
Schottky Barrier Diodes ◽  
High Energy Electron

scholarly journals Electrical Characterization of Defects Introduced In n-GaN During High Energy Proton and He-Ion Irradiation

1999 ◽  
Vol 4 (S1) ◽  
pp. 606-611 ◽  
Author(s):  
S. A. Goodman ◽  
F. D. Auret ◽  
F. K. Koschnick ◽  
J.-M. Spaeth ◽  
B. Beaumont ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
Emission Rate ◽  
Ion Irradiation ◽  
Deep Level ◽  
Electrical Characterization ◽  
Ion Bombardment ◽  
High Energy ◽  
Electron Traps ◽  
Transient Spectroscopy

We report on the electrical properties of defects as determined by deep level transient spectroscopy (DLTS) introduced in epitaxially grown n-GaN by 2.0 MeV protons and 5.4 MeV He-ions. After He-ion bombardment three electron traps ER3 (Ec − 0.196 eV), ER4 (Ec − 0.78 eV), and ER5 (Ec − 0.95 eV) were introduced uniformly in the region profiled by DLTS with introduction rates of 3270 ± 200, 1510 ± 300, and 3030 ± 500 cm−1 respectively. Capture cross section measurements revealed that the electron capture kinetics of ER5 is similar to that of a line defect. A defect with similar electronic properties as ER3 is observed after 2.0 MeV proton irradiation. The emission rate of ER3 depends on the electric field strength in the space-charge region. This emission rate is modelled according to the Poole-Frenkel distortion of a square well with a radius of 20 ± 2 Å or alternatively, a Gaussian well with a characteristic width of 6.0 ± 1 Å. Hence, we conclude that ER1 is a point defect which appears to have an acceptor like character. Two additional electron traps, ER1 (Ec −0.13 eV) and ER2 (Ec − 0.16eV) with introduction rates of 30 ± 10 and 600 ± 100 cm−1 not thusfar observed after electron or He-ion bombardment were observed after proton irradiation.

Microsrtuctures and Electrical Characterization of CVD-W and Mo Films as Contacts in Photocells

1994 ◽  
Vol 363 ◽  
Author(s):  
Kostadinka A. Gesheva ◽  
G. I. Stoyanov ◽  
R. Stefanov ◽  
E. S. Vlakhov
Keyword(s):  
Thin Films ◽  
Chemical Vapour ◽  
Electrical Characterization ◽  
Deposition Process ◽  
High Energy ◽  
Cdte Layer ◽  
Sublimation Method ◽  
Observed Behaviour ◽  
Microstructural Studies

AbstractTungsten and molybdenum hexacarbonyls were used as precursors in chemical vapour deposition process for preparation of W and Mo thin films. Pyrolitical decomposition of these precursors proceeds at temperatures of 250–400°C. Thin films with thicknesses in the range of 0,02–1 μm were deposited on different substrates - bare or covered with CdTe glass, and monocrystalline Si. Microstructural studies performed by Reflection High Energy Electron Diffraction (RHEED) method showed that films deposited tend to grow textured. This is discussed as probably due to differences in the growth rate for various crystal planes. The sheet resistances of the as-deposited W and Mo films are in the range of 20–30 Ω/□ for thicknesses of 0.15 μm. After thermal annealing the resistance of W films drops to about 2 Ω/□ and for Mo films to about 9Ω/□. Decreasing in the resistivity of the films is tightly connected with the decreasing in the impurities concentration. These impurities are considered to be in the base of the observed behaviour of the temperature dependence of the electrical resistance of the films. The CVD-W and Mo films are studied as back contacts on CdTe layer in CdS/CdTe photocells. In the paper some preliminary results are presented for the sheet and contact resistances when CVD W and Mo films are deposited at lower temperatures on the surface of CdTe layers, deposited by closespaced sublimation method. The thin film materials, produced by CVD technology look promising with respect to the required high deposition rates and extremely wide deposition areas in the mass production of solar cells.

n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature

2005 ◽  
Vol 483-485 ◽  
pp. 649-652 ◽  
Author(s):  
Mariaconcetta Canino ◽  
Antonio Castaldini ◽  
Anna Cavallini ◽  
Francesco Moscatelli ◽  
Roberta Nipoti ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Electrical Characterization ◽  
Surface States ◽  
High Energy ◽  
Subsequent Annealing ◽  
Energy Trap ◽  
Implantation Process

n+/p diodes have been realized by 300°C phosphorus ion implantation and subsequent annealing at 1300°C. An electrical characterization of the devices as well as a study of the defects introduced by the implantation process has been made. I-V measurements pointed out that the diodes maintain a good rectifying behavior up to 737K. DLTS analyses detected the presence of three traps, T2, T3 and T4, which are not due to the implantation process, and a high energy trap, T5, that could be related to the surface states at the Ni/SiC interface.

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