FABRICATION OF GaN HOMO-JUNCTION ON Si (111) SUBSTRATE FOR SENSOR APPLICATIONS

2013 ◽  
Vol 01 (01) ◽  
pp. 1250006 ◽  
Author(s):  
M. Z. MOHD YUSOFF ◽  
Z. HASSAN ◽  
C. W. CHIN ◽  
H. ABU HASSAN ◽  
M. J. ABDULLAH ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
High Energy ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Raman Analysis ◽  
Sensor Applications ◽  
Current Voltage ◽  
Good Optical Quality

In this paper, we investigated growth of GaN pn-homo junction layers on silicon (111) by plasma-assisted molecular beam epitaxy (PA-MBE) system and its application for photo-sensors. Silicon (Si) and magnesium (Mg) were used in this study as n- and p-dopants, respectively. Structural and optical analysis of the GaN homo-junction samples were performed by using reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), Raman spectroscopy and photoluminescence (PL) to analyze the crystalline quality of the samples. Surprisingly, the Raman analysis has revealed that there is no quenching of the A1 (LO) peak, with the presence of Si - and Mg -dopants in sample. The pn-junctions sample has good optical quality as measured by the PL system. Electrical characterization of the photo-sensors was carried out by using current–voltage (I–V) measurements.

GROWTH AND CHARACTERIZATION OF NONLINEAR OPTICAL PARA-NITROANILINE (pNA) SINGLE CRYSTALS

2007 ◽  
Vol 21 (29) ◽  
pp. 2025-2032 ◽  
Author(s):  
T. BARANIRAJ ◽  
P. PHILOMINATHAN ◽  
N. VIJAYAN
Keyword(s):  
Single Crystals ◽  
Nonlinear Optical ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
X Ray ◽  
Evaporation Technique ◽  
Optical Behavior ◽  
Good Optical Quality ◽  
Thermal Stability Of

Single crystals of para Nitroaniline ( pNA ), an organic nonlinear optical (NLO) material, have been grown by slow solvent evaporation technique at room temperature. Good optical quality single crystals with dimensions of up to 10 × 11 × 3 mm 3 have been grown by adopting the above technique, and good quality single crystals were obtained. The grown single crystals were subjected to different characterization analyses. The lattice dimensions have been determined from the powder X-ray diffraction analysis. Its functional groups and optical behavior have been identified from the FTIR and UV-Vis. analyses respectively. The thermal stability of the crystal has been analyzed by thermogravimetric (TG) and differential thermal (DT) analyses respectively.

Structural and Electrical Characterization of TiB2/TiSi2 Bilayer Barrier Structure

1996 ◽  
Vol 441 ◽  
Author(s):  
G. Sade ◽  
J. Pelleg ◽  
A. Grisaru
Keyword(s):  
Diffusion Barrier ◽  
Vacuum Annealing ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Current Voltage ◽  
Thermal Stability Of

AbstractThe TiB2/TiSi2 bilayer is considered as a diffusion barrier in metallization system with Cu. The TiSi2 sublayer serves as a contact and also as an additional diffusion barrier against boron, which outdiffuses from TiB2 at high temperature annealing. The attempts to form TiSi2 by vacuum annealing of TiB2/Ti film, which was obtained by co-sputtering from elemental targets are described. The composition and the structure of the films were analyzed by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and high-resolution cross-sectional TEM (HRXTEM). The Cu/TiB2/(Ti-Si)/n-Si contacts were investigated using current-voltage (I–V) on Schottky diode structures, which were prepared on n-type Si (100). The thermal stability of the TiB2/(Ti-Si) barrier was studied by structural and electrical analysis.It was observed that the lowest sheet resistance of 5.1 Ω/‪ was obtained after 850 °C annealing for 30 min, however the resulting Ti-Si layer is practically still amorphous and contains only a very small fraction of C54 TiSis in the form of microcrystallites. This layer also contained Ti5Si3 as indicated by XRD. The barrier height of Cu/TiB2/(Ti-Si)/n-Si Schottky diodes is ˜0.6 V and it does not show significant changes in the range 400–700 °C. Electrical monitoring is a very effective tool to detect deterioration of the barrier. No penetration is observed by AES at 700 °C, while the I–V curve shows changes in properties.

Material and Electrical Characterization of Nickel Silicide-Carbon as Contact Metal to Silicon-Carbon Source and Drain Stressors

2007 ◽  
Vol 995 ◽  
Author(s):  
Rinus Tek Po Lee ◽  
Li-Tao Yang ◽  
Kah-Wee Ang ◽  
Tsung-Yang Liow ◽  
Kian-Ming Tan ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Nickel Silicide ◽  
Cumulative Distribution ◽  
X Ray Diffraction ◽  
Silicon Carbon ◽  
Current Voltage ◽  
First Time ◽  
Nickel Silicon ◽  
Contact Metal

AbstractIn this paper, the material and electrical characteristics of Nickel-Silicon-Carbon (NiSi:C) films were investigated for the first time to ascertain the compatibility of NiSi:C contacts to silicon-carbon (Si:C) source/drain stressors. The incorporation of 1 atomic percent of carbon was found to increase both the Ni2Si-to-NiSi and NiSi-to-NiSi2 transformation temperatures. Our results show that the incorporation of carbon stabilizes the interfacial and surface morphology of NiSi:C films. We speculate that the incorporated carbon segregates into the NiSi:C grain boundaries and suppresses film agglomeration and NiSi-to-NiSi2 phase transformation. X-ray diffraction analysis further revealed that the formed NiSi:C films possessed a preferred orientation. Current-voltage measurements for NiSi and NiSi:C n+/p junctions exhibit similar cumulative distribution for junction leakage indicating that carbon incorporation does not have a detrimental impact on the n+/p junction integrity. Our results suggest that NiSi:C is a suitable self-aligned contact metal silicide to n-channel MOSFETs with SiC S/D stressors in a similar manner to the way in which NiSiGe is used for p-channel MOSFETs with SiGe S/D stressors.

Chemical and Electrical Characterization of the CoGa/GaAs Interface as A Function of Temperature: A Thermally Stable Schottky Barrier up to 500°C

1992 ◽  
Vol 260 ◽  
Author(s):  
A. Alec Talin ◽  
Tue Ngo ◽  
R. Stanley Williams
Keyword(s):  
Schottky Barrier ◽  
Electrical Characterization ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage ◽  
Lattice Matched ◽  
Better Than ◽  
Oriented Single Crystal

ABSTRACTX-ray diffraction studies and current-voltage measurements have been performed on a (100) oriented single crystal thin film of CoxGa1-x (x = 0.42) grown epitaxially on n-GaAs, from 300°C to 900°C. At this composition, CoxGa1-x, which has a broad range of homogeneity and a variable lattice parameter, is lattice matched to GaAs better than 0.5%. A Schottky barrier height of 0.68eV and an ideality factor of 1.07 have been measured up to 500°C, with significant barrier degradation at 600°C. At 700°C formation of the CoGa3 phase and a shift in CoxGa1-x stoichiometry to its bulk thermodynamically most stable composition of Co.45Ga.55 was observed with x-ray diffraction. At 800°C Co2AS formed, and at 900°C only CoGa3 and Co2As phases remained in contact with GaAs.

Simulations of Ge+ and C+ Implantations to form SiGe/Si HBT and Characterization of SiGe and SiGeC Diodes

1991 ◽  
Vol 220 ◽  
Author(s):  
Ashawant Gupta ◽  
Jeffrey W. Waters ◽  
Carmen Cook ◽  
Cary Y. Yang ◽  
Akira Fukamia ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Wide Bandgap ◽  
Carbon Doping ◽  
Current Voltage ◽  
Narrow Bandgap ◽  
Measurement Results ◽  
Capacitance Voltage ◽  
Emitter Junction

ABSTRACTSimulations of Ge+ and C+ implantations in Si were performed to study bandgap grading in the SiGeC/Si heterojunction bipolar transistor (HBT). Although no bandgap discontinuity was observed at the base-emitter junction, it was found that a wide-bandgap emitter and a narrow-bandgap base with proper bandgap grading were obtainable with implantation. Electrical characterization of SiGe and SiGeC diodes formed by Ge+ and C+ implantations in Si was carried out. Current-voltage (I-V) measurement results confirm that carbon doping improves the crystalline quality of the germanium-implanted layer. On the other hand, capacitance-voltage (C-V) measurements indicate that both germanium and carbon implantations result in considerable dopant deactivation.

Electrical Characteristics of GaAs Implanted with High Energy (100 MeV) 28Si and 120Sn Ions

2014 ◽  
Vol 661 ◽  
pp. 3-7
Author(s):  
Yousuf Pyar Ali ◽  
Arun M. Narsale ◽  
Brij Mohan Arora
Keyword(s):  
Electrical Conduction ◽  
Conduction Mechanism ◽  
Electrical Characterization ◽  
High Energy ◽  
The Other ◽  
Electrical Characteristics ◽  
Defect States ◽  
Temperature Range ◽  
Current Voltage

In this work we carried out electrical characterization of n-GaAs implanted at 300 K with high energy (100 MeV)28Si and120Sn ions to a fluence of 1x1018ions/m2using current–voltage (I-V) measurements. The as implanted samples and samples annealed in the temperature range 373-1123 K have been investigated. Resistance of the samples obtained from I-V curves recorded over the temperature range 110K-270K indicate that the samples implanted with28Si and annealed up to 623 K and the samples implanted with120Sn and annealed up to 723K shows tunnel assisted hoping conduction mechanism. In the other hand,28Si implanted samples annealed to 723K and 823K and120Sn implanted samples annealed to 823K and 923K the electrical conduction mechanism is dominated by thermal hoping between closed defect states.

Synthesis and Electrical Characterization of Tin Oxide Nanostructures

2009 ◽  
Vol 1178 ◽  
Author(s):  
Olivia Maria Berengue ◽  
Cleocir J. Dalmaschio ◽  
Tiago G. Conti ◽  
Adenilson J. Chiquito ◽  
Edson R. Leite
Keyword(s):  
Electron Microscopy ◽  
Electrical Characterization ◽  
Morphological Characterization ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Current Voltage ◽  
Different Temperatures ◽  
Light Excitation ◽  
Resistance Curves

AbstractSn3O4 nanobelts were grown by a carbothermal evaporation process of SnO2 powders in association with the well known vapour-solid mechanism (VS). The nanobelts crystal structure was investigated by x-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), raman spectroscopy and field emission gun scanning electron microscopy (FEG-SEM). The structural and morphological characterization has confirmed the growth of single crystal nanobelts. The electrical characterization (current-voltage, temperature-dependent resistance curves) of individual Sn3O4 nanobelts was performed at different temperatures and light excitation. The experiments revealed a semiconductor – like character as evidenced by the resistance decreasing at high temperatures. The transport mechanism was identified as the variable range hopping.

Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC

2019 ◽  
Vol 963 ◽  
pp. 460-464
Author(s):  
Rabia Y. Khosa ◽  
J.T. Chen ◽  
K. Pálsson ◽  
Robin Karhu ◽  
Jawad Hassan ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Single Crystalline ◽  
Current Voltage ◽  
Metal Organic ◽  
Mis Capacitors ◽  
Organic Chemical Vapor Deposition

We report on a very low density of interface traps at the AlN/4H-SiC interface estimated from capacitance-voltage (CV) analysis of metal-insulator-semiconductor (MIS) capacitors. Single crystalline aluminum nitride (AlN) films are grown by metal organic chemical vapor deposition (MOCVD). Current-voltage (IV) analysis shows that the breakdown electric field across the AlN dielectric is 3 MV/cm. By depositing an additional SiO2 layer on top of the AlN layer it is possible to increase the breakdown voltage of the MIS capacitors significantly without having pronounced impact on the quality of the AlN/SiC interface.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

3-Dimensional Characterization of Polycrystalline Bulk Materials Using High-Energy Synchrotron Radiation

2007 ◽  
Vol 539-543 ◽  
pp. 2353-2358 ◽  
Author(s):  
Ulrich Lienert ◽  
Jonathan Almer ◽  
Bo Jakobsen ◽  
Wolfgang Pantleon ◽  
Henning Friis Poulsen ◽  
...  
Keyword(s):  
High Resolution ◽  
Synchrotron Radiation ◽  
High Energy ◽  
Mapping Technique ◽  
X Ray Diffraction ◽  
Bulk Materials ◽  
Reciprocal Space Mapping ◽  
3 Dimensional ◽  
Individual Grains

The implementation of 3-Dimensional X-Ray Diffraction (3DXRD) Microscopy at the Advanced Photon Source is described. The technique enables the non-destructive structural characterization of polycrystalline bulk materials and is therefore suitable for in situ studies during thermo-mechanical processing. High energy synchrotron radiation and area detectors are employed. First, a forward modeling approach for the reconstruction of grain boundaries from high resolution diffraction images is described. Second, a high resolution reciprocal space mapping technique of individual grains is presented.

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