Characterization of silicon carbide coatings grown on graphite by chemical vapor deposition

The article provides an overview of the scientific and technical literature in the field of the formation of silicon carbide coatings by chemical vapor deposition (CVD). CVD is a complex process, approaches to which vary depending on the tasks being solved. Depending on the technological parameters, the initial reagents, the substrate for deposition, the type and design of the CVD reactors, it is possible to achieve both the deposition of pure silicon carbide and the co-deposition of silicon and/or carbon. In the first part of the article, attention is paid to the study of CVD from the point of view of the mechanisms of chemical reactions, the design of the deposition apparatus, the substrates for deposition.

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Characterization of Microstructural Damage in Silicon Carbide Processed via Modified Chemical Vapor Deposition

Advances in Ceramic Armor V - Ceramic Engineering and Science Proceedings ◽

10.1002/9780470584330.ch6 ◽

2010 ◽

pp. 57-65 ◽

Cited By ~ 1

Author(s):

H.T. Miller ◽

J.C. LaSalvia ◽

R.B. Leavy ◽

D.E. MacKenzie

Keyword(s):

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Microstructural Damage

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Omcvd Elaboration and Characterization of Silicon Carbide and Carbon-Silicon Carbide Films from Organosilicon Compounds

MRS Proceedings ◽

10.1557/proc-271-939 ◽

1992 ◽

Vol 271 ◽

Author(s):

R. Morancho ◽

A. Reynes ◽

M'b. Amjoud ◽

R. Carles

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Raman Spectroscopy ◽

Chemical Vapor Deposition ◽

Thermal Behavior ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organosilicon Compounds ◽

Carrier Gas

ABSTRACTTwo organosilicon molecules tetraethysilane (TESi) and tetravinylsilane (TVSi) were used to prepare thin films of silicon carbide by chemical vapor deposition (C. V. D.). In each of the molecule, the ratio C/Si = 8, the only difference between TESi and TVSi is the structure of the radicals ethyl (.CH2-CH3) and vinyl (.CH=CH2). This feature induces different thermal behavior and leads to the formation of different materials depending on the nature of the carrier gas He or H2· The decomposition gases are correlated with the material deposited which is investigated by I.R. and Raman spectroscopy. The structure of the starting molecule influences the mechanisms of decomposition and consequently the structure of the material obtained.

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Control of stoichiometry, microstructure, and mechanical properties in SiC coatings produced by fluidized bed chemical vapor deposition

Journal of Materials Research ◽

10.1557/jmr.2008.0220 ◽

2008 ◽

Vol 23 (6) ◽

pp. 1785-1796 ◽

Cited By ~ 44

Author(s):

E. López-Honorato ◽

P.J. Meadows ◽

J. Tan ◽

P. Xiao

Keyword(s):

Mechanical Properties ◽

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Young’S Modulus ◽

Fluidized Bed ◽

Vapor Deposition ◽

Young's Modulus ◽

Chemical Vapor ◽

Carbide Coatings ◽

Fuel Particles

Stoichiometric silicon carbide coatings the same as those used in the formation of TRISO (TRistructural ISOtropic) fuel particles were produced by the decomposition of methyltrichlorosilane in hydrogen. Fluidized bed chemical vapor deposition at around 1500 °C, produced SiC with a Young’s modulus of 362 to 399 GPa. In this paper we demonstrate the deposition of stoichiometric silicon carbide coatings with refined microstructure (grain size between 0.4 and 0.8 μm) and enhanced mechanical properties (Young’s modulus of 448 GPa and hardness of 42 GPa) at 1300 °C by the addition of propene. The addition of ethyne, however, had little effect on the deposition of silicon carbide. The effect of deposition temperature and precursor concentration were correlated to changes in the type of molecules participating in the deposition mechanism.

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Characterization of Silicon Carbide Films Prepared by Chemical Vapor Deposition

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.177.78 ◽

2010 ◽

Vol 177 ◽

pp. 78-81

Author(s):

Fan Tao Meng ◽

Shan Yi Du ◽

Yu Min Zhang

Keyword(s):

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Crystalline Phase ◽

Chemical Vapor ◽

The Mean ◽

Sic Coatings ◽

Deposited Film ◽

Deposited Films

Silicon carbide prepared by chemical vapor deposition (CVD) is one of the important candidate materials for space mirror and high-power mirror such as laser mirror, because of its superior performances such as low density, high melting point and homogeneity. In this paper, the SiC coatings were deposited on the substrates of reaction bonded silicon carbide (RB-SiC) by CVD process. Then, the morphologies of the deposits were examined with scanning electron microscopy. The crystalline phase of the as-deposited films was confirmed with X-ray diffractometry. And the adhesion between the CVD film and the substrate was rated with scraping method. As a result, the morphologies of the deposits, i.e. whiskers at 1050°C or films at 1100°C, are different from that of the substrate. And the mean diameter of the deposits at 1100°C is larger than that at 1050°C. Furthermore, the crystalline phase of the as-deposited film is determined as β-SiC and the adhesion is firm enough not to be peeled off with the scraping test.

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