FORMATION OF SILICON CARBIDE COATINGS BY CHEMICAL VAPOR DEPOSITION (review). Part 1

The article provides an overview of the scientific and technical literature in the field of the formation of silicon carbide coatings by chemical vapor deposition (CVD). CVD is a complex process, approaches to which vary depending on the tasks being solved. Depending on the technological parameters, the initial reagents, the substrate for deposition, the type and design of the CVD reactors, it is possible to achieve both the deposition of pure silicon carbide and the co-deposition of silicon and/or carbon. In the first part of the article, attention is paid to the study of CVD from the point of view of the mechanisms of chemical reactions, the design of the deposition apparatus, the substrates for deposition.

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Control of stoichiometry, microstructure, and mechanical properties in SiC coatings produced by fluidized bed chemical vapor deposition

Journal of Materials Research ◽

10.1557/jmr.2008.0220 ◽

2008 ◽

Vol 23 (6) ◽

pp. 1785-1796 ◽

Cited By ~ 44

Author(s):

E. López-Honorato ◽

P.J. Meadows ◽

J. Tan ◽

P. Xiao

Keyword(s):

Mechanical Properties ◽

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Young’S Modulus ◽

Fluidized Bed ◽

Vapor Deposition ◽

Young's Modulus ◽

Chemical Vapor ◽

Carbide Coatings ◽

Fuel Particles

Stoichiometric silicon carbide coatings the same as those used in the formation of TRISO (TRistructural ISOtropic) fuel particles were produced by the decomposition of methyltrichlorosilane in hydrogen. Fluidized bed chemical vapor deposition at around 1500 °C, produced SiC with a Young’s modulus of 362 to 399 GPa. In this paper we demonstrate the deposition of stoichiometric silicon carbide coatings with refined microstructure (grain size between 0.4 and 0.8 μm) and enhanced mechanical properties (Young’s modulus of 448 GPa and hardness of 42 GPa) at 1300 °C by the addition of propene. The addition of ethyne, however, had little effect on the deposition of silicon carbide. The effect of deposition temperature and precursor concentration were correlated to changes in the type of molecules participating in the deposition mechanism.

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Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling

Materials Science Forum ◽

10.4028/www.scientific.net/msf.778-780.175 ◽

2014 ◽

Vol 778-780 ◽

pp. 175-178 ◽

Cited By ~ 1

Author(s):

Pitsiri Sukkaew ◽

Lars Ojamäe ◽

Örjan Danielsson ◽

Olof Kordina ◽

Erik Janzén

Keyword(s):

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Outcome Prediction ◽

Chemical Vapor ◽

The Other ◽

Thermochemical Properties ◽

Complex Process ◽

Final Error ◽

Reported Data

Chemical vapor deposition of silicon carbide (SiC-CVD) is a complex process involving a Si-C-H system wherein a large number of reaction steps occur. To simulate such a system requires knowledge of thermochemical and transport properties of all the species involved in the process. The accuracy of this information consequently becomes a crucial factor toward the correctness of the outcome prediction. The database on thermochemical properties of well-known species such as small hydrocarbons has been established over decades and it is accurate and easily accessible. On the other hand, the database for less frequently used species such as organosilicons is still under development. Apart from the accuracy issue, a consistency in acquiring procedures, whether theoretical or experimental, is another factor controlling the final error of the simulated outcome. In this work, the thermochemical data for several important growth species for SiC CVD using the SiH4/CxHy/H2system has been calculated. For the most part an excellent agreement is seen with previously reported data, however for the organosilicons a larger deviation is detected and in particular for the CH3SiH2SiH species which shows a stark deviation from the CHEMKIN database.

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