Progress in Japanese frontier projects on ion beam processing of advanced materials

1996 ◽  
pp. 233-241
Author(s):  
K. Hattori
Keyword(s):  
Ion Beam ◽  
Advanced Materials

A Membrane Deflection Fracture Experiment to Investigate Fracture Toughness of Freestanding MEMS Materials

2003 ◽  
Vol 795 ◽  
Author(s):  
H. D. Espinosa ◽  
B. Peng
Keyword(s):  
Thin Film ◽  
Fracture Toughness ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Mean Value ◽  
Advanced Materials ◽  
Ultrananocrystalline Diamond ◽  
Membrane Deflection

ABSTRACTThis paper presents a novel Membrane Deflection Fracture Experiment (MDFE) to investigate the fracture toughness of MEMS and other advanced materials in thin film form. It involves the stretching of freestanding thin-film membranes, in a fixed-fixed configuration, containing pre-existing cracks. The fracture behavior of ultrananocrystalline diamond (UNCD), a material developed at Argonne National Laboratory, is investigated to illustrate the methodology. When the fracture initiates from sharp cracks, produced by indentation, the fracture toughness was found to be 4.7 MPa m1/2. When the fracture initiates from blunt notches with radii about 100 nm, machined by focused ion beam (FIB), the mean value of the apparent fracture toughness was found to be 7.2 MPa m1/2. Comparison of these two values, using the model proposed by Drory et al. [9], provides a correction factor of 2/3, which corresponds to a mean value of ρ/2x=1/2.

A Cross-Sectional TEM Specimen of a Multilayer Thin Film Prepared Using the FIB Technique

2015 ◽  
Vol 771 ◽  
pp. 108-111
Author(s):  
Harini Sosiati ◽  
Satoshi Hata ◽  
Toshiya Doi
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Multilayer Film ◽  
Ion Beam ◽  
Substrate Surface ◽  
Thin Foil ◽  
Advanced Materials ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Stem Image

A focused ion beam (FIB) mill equipped with a microsampling (MS) unit and combined with transmission electron microscopy (TEM)/scanning TEM-energy dispersive x-ray spectroscopy (STEM-EDXS) is a powerful tool for studies of the functional advanced materials. For the studies, the specimen must be prepared as a thin foil which is tranparent to the electron beam. Focused ion beam is very effective method for fabricating TEM specimen of the cross-sectional thin film with the “lift-out” technique using a tungsten (W)-needle probe as a micromanipulator. A multilayer film of MgB2/Ni deposited on a Si (001) substrate prepared by FIB-MS technique is presented. Before FIB fabrication, the surface of the multilayer film was coated with W-film to prevent the surface from bombardment by the ion beam. A bright field (BF)-STEM image of the multilayer film related to two-dimensional (2D) elemental mapping clearly showed the presence of MgB2-and Ni-nanolayers. The measured experimental spacing between Ni-nanolayers was comparable with the actual specimen design, but the thickness of Ni-nanolayer was not. Unexpected nanostructures of the formation of SiO2 film on the substrate surface and holes within the film were observed.

Major Materials Meetings in Asia Provide Multiple-Week Interdisciplinary Exchange: Tokyo, Kyoto, Shangha Are Host Cities

MRS Bulletin ◽  
1988 ◽  
Vol 13 (9) ◽  
pp. 29-36 ◽  
Keyword(s):  
Ion Implantation ◽  
Electronic Materials ◽  
Ion Beam ◽  
Vice President ◽  
Research Society ◽  
Advanced Materials ◽  
International Meeting ◽  
International Conference ◽  
Materials Research ◽  
Cad Cam

The beginning of June saw the cities of Tokyo, Kyoto, and Shanghai host to several weeks of interdisciplinary exchanges on a broad spectrum of materials topics. The meetings began with the MRS International Meeting on Advanced Materials (May 30 - June 3) and continued with the Shanghai Workshop on Characterization of Ion Implantation in Silicon (June 2-3) held as part of the 7th International Conference on Ion Implantation Technology in Kyoto (June 7-10), the 6th International Conference on Ion Beam Modification of Materials (June 12-17), and the JSAP-MRS International Conference on Electronic Materials (June 13-15).During the week preceding the meetings, the International Trade Center grounds at Harumi were the site of an Advanced Materials and Engineering Exhibition. Machine tools, CAD/CAM, and advanced materials exhibits filled three pavilions. The Materials Research Society was represented in the advanced materials area where, through a brochure translated into Japanese, the Society and its programs were introduced to the exhibit's visitors.The concept for the MRS International Meeting on Advanced Materials held May 30 to June 3 took root several years ago and represents the first “MRS-style” event to be organized in Japan. Based on the enthusiastic participation by Japanese scientists and by a healthy complement of foreign scientists, it should repeat. MRS First Vice President R.P.H. Chang has been responsible for the interaction between the Materials Research Society and the meeting Organizers.General chairmen for the event were S. Somiya of the Nishi Tokyo University (currently a Principal Editor for Journal of Materials Research) and M. Doyama of Nagoya University. They assembled some 20 topical symposia which were held in two buildings of the Sunshine City complex in the Ikebukuro district of Tokyo. All the sessions were very well attended, with total meeting registrant numbers reaching over 1,500.

APPLICATIONS OF ION BEAM ANALYSIS TO THE ELEMENTAL AND ISOTOPIC CHARACTERISATION OF ADVANCED MATERIALS

2001 ◽  
Vol 15 (28n29) ◽  
pp. 1271-1280
Author(s):  
I. C. VICKRIDGE
Keyword(s):  
Materials Science ◽  
Condensed Matter ◽  
Ion Beam ◽  
Depth Profiling ◽  
Advanced Materials ◽  
Nuclear Reaction Analysis ◽  
Condensed Matter Physics ◽  
Ion Beam Analysis ◽  
Isotopic Tracing ◽  
Beam Analysis

The accelerator laboratory of the Groupe de Physique des Solides, Paris, has pioneered a number of IBA techniques and applications over the last few decades. In particular, in the 1960's and 1970's, Nuclear Reaction analysis (NRA) including nuclear resonance depth profiling, isotopic tracing combined with NRA, and channelling techniques were developed under the leadership of G. Amsel. In this paper I will present a selection of recent applications from this laboratory of NRA, isotopic tracing with stable isotopes, and ion channelling, intended to illustrate the present status of these techniques in condensed matter physics and materials science, and to act as a backdrop for a discussion of future directions for development of Ion Beam Analysis in condensed matter physics and advanced materials research.

scholarly journals Modification, Synthesis, and Analysis of Advanced Materials Using Ion Beam Techniques

2012 ◽  
Vol 2012 ◽  
pp. 1-2 ◽  
Author(s):  
Adam Georg Balogh ◽  
Koumei Baba ◽  
David D. Cohen ◽  
Robert G. Elliman ◽  
Wolfgang Ensinger ◽  
...  
Keyword(s):  
Ion Beam ◽  
Advanced Materials

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

Effects of Ion Beam Milling on Surface Topography

1973 ◽  
Vol 31 ◽  
pp. 84-85
Author(s):  
P.G. Pawar ◽  
P. Duhamel ◽  
G.W. Monk
Keyword(s):  
Surface Topography ◽  
Ion Beam ◽  
Solid Material ◽  
Beam Current ◽  
Atomic Mass ◽  
Micro Milling ◽  
Ion Milling ◽  
Controlled Atmospheres ◽  
Milling Operations ◽  
Sufficient Energy

A beam of ions of mass greater than a few atomic mass units and with sufficient energy can remove atoms from the surface of a solid material at a useful rate. A system used to achieve this purpose under controlled atmospheres is called an ion miliing machine. An ion milling apparatus presently available as IMMI-III with a IMMIAC was used in this investigation. Unless otherwise stated, all the micro milling operations were done with Ar+ at 6kv using a beam current of 100 μA for each of the two guns, with a specimen tilt of 15° from the horizontal plane.It is fairly well established that ion bombardment of the surface of homogeneous materials can produce surface topography which resembles geological erosional features.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

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