Detailed analysis of β-SiC formation by high dose carbon ion implantation in silicon

AbstractThe use of high dose carbon ion implantation in Si for the production of ultrathin membranes is investigated. Carbon implantations with doses up to 1018 cm-8 and energies up to 300 keV, at room temperature and 500°C were used, followed by 10 hours annealing at 1150°C. Structural and chemical analysis has been performed (including TEM, XPS, Raman and IR spectroscopies), and the etch properties have been investigated for KOH and TMAH etchants. It is found that doses higher than 1017 cm-2 are needed to obtain efficient etch-stop layers in TMAH, independently of the annealing conditions, while in contrast with previous work, it was not possible to obtain satisfactory results using KOH. According to this, ultrathin crystalline membranes (below 500 nm thick) with average surface roughness as low as 4.8 nm, measured by AFM, were obtained, and the structural analysis revealed the formation of a highly stable buried layer of crystalline β-SiC precipitates aligned with the Si matrix. These results corroborate the ability of high dose C ion implantation to obtain buried layers usable for micomachining applications.

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Spectroscopic characterization of phases formed by high‐dose carbon ion implantation in silicon

Journal of Applied Physics ◽

10.1063/1.358714 ◽

1995 ◽

Vol 77 (7) ◽

pp. 2978-2984 ◽

Cited By ~ 28

Author(s):

C. Serre ◽

A. Pérez‐Rodríguez ◽

A. Romano‐Rodríguez ◽

J. R. Morante ◽

R. Kögler ◽

...

Keyword(s):

Ion Implantation ◽

Spectroscopic Characterization ◽

High Dose ◽

Carbon Ion

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Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100118370 ◽

1985 ◽

Vol 43 ◽

pp. 300-301

Author(s):

N. Lewis ◽

E. L. Hall ◽

A. Mogro-Campero ◽

R. P. Love

Keyword(s):

Ion Implantation ◽

Single Crystal ◽

Single Crystal Silicon ◽

Silicon Layer ◽

Device Fabrication ◽

Silicon On Insulator ◽

High Dose ◽

Crystal Silicon ◽

Oxygen Ion ◽

Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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TEM study of buried cobalt disilicide layers formed by ion implantation: Identification of cobalt monosilicide inclusions

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176010 ◽

1990 ◽

Vol 48 (4) ◽

pp. 576-577

Author(s):

A. De Veirman ◽

J. Van Landuyt ◽

K.J. Reeson ◽

R. Gwilliam ◽

C. Jeynes ◽

...

Keyword(s):

Ion Implantation ◽

Annealing Treatment ◽

Silicon On Insulator ◽

High Dose ◽

Nitrogen Flow ◽

Cobalt Disilicide ◽

Transmission Electron ◽

Beam Heating ◽

Co Concentration ◽

Silicon On Insulator Technology

In analogy to the formation of SIMOX (Separation by IMplanted OXygen) material which is presently the most promising silicon-on-insulator technology, high-dose ion implantation of cobalt in silicon is used to synthesise buried CoSi2 layers. So far, for high-dose ion implantation of Co in Si, only formation of CoSi2 is reported. In this paper it will be shown that CoSi inclusions occur when the stoichiometric Co concentration is exceeded at the peak of the Co distribution. 350 keV Co+ ions are implanted into (001) Si wafers to doses of 2, 4 and 7×l017 per cm2. During the implantation the wafer is kept at ≈ 550°C, using beam heating. The subsequent annealing treatment was performed in a conventional nitrogen flow furnace at 1000°C for 5 to 30 minutes (FA) or in a dual graphite strip annealer where isochronal 5s anneals at temperatures between 800°C and 1200°C (RTA) were performed. The implanted samples have been studied by means of Rutherford Backscattering Spectroscopy (RBS) and cross-section Transmission Electron Microscopy (XTEM).

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A New Hafnium-Beryllium System Prioduced by Ion Implantation and Annealing Techniques

MRS Proceedings ◽

10.1557/proc-27-187 ◽

1983 ◽

Vol 27 ◽

Cited By ~ 1

Author(s):

J.C. Soares ◽

A.A. Melo ◽

M.F. DA Silva ◽

E.J. Alves ◽

K. Freitag ◽

...

Keyword(s):

Ion Implantation ◽

Single Crystals ◽

Room Temperature ◽

Low Dose ◽

Correlation Method ◽

High Dose ◽

Tetrahedral Sites ◽

Time Differential ◽

Before And After ◽

Beryllium Foil

ABSTRACTLow and high dose hafnium imolanted beryllium samoles have been prepared at room temperature by ion implantation of beryllium commercial foils and single crystals. These samples have been studied before and after annealing with the time differential perturbed angular correlation method (TDPAC) and with Rutherford backscattering and channeling techniques. A new metastable system has been discovered in TDPAC-measurements in a low dose hafnium implanted beryllium foil annealed at 500°C. Channeling measurements show that the hafnium atoms after annealing, are in the regular tetrahedral sites but dislocated from the previous position occupied after implantation. The formation of this system is connected with the redistribution of oxygen in a thin layer under the surface. This effect does not take place precisely at the same temperature in foils and in single crystals.

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