Fabrication of interdigitated high-performance zinc oxide nanowire modified electrodes for glucose sensing

Heterojunction nanohybrid zinc oxide nanowires on graphene (ZnO-NW/graphene) combines crystalline ZnO-NWs with high charge mobility of graphene to provide a platform for high-performance devices.

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High-Performance Strain Sensors Based on Vertically Aligned Piezoelectric Zinc Oxide Nanowire Array/Graphene Nanohybrids

ACS Applied Nano Materials ◽

10.1021/acsanm.0c01150 ◽

2020 ◽

Vol 3 (7) ◽

pp. 6711-6718 ◽

Cited By ~ 1

Author(s):

Mohan Panth ◽

Brent Cook ◽

Young Zhang ◽

Dan Ewing ◽

Ashely Tramble ◽

...

Keyword(s):

Zinc Oxide ◽

High Performance ◽

Nanowire Array ◽

Strain Sensors ◽

Vertically Aligned ◽

Zinc Oxide Nanowire

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Core-shell nanostructured Zn-Co-O@CoS arrays for high-performance hybrid supercapacitors

Dalton Transactions ◽

10.1039/d1dt00584g ◽

2021 ◽

Author(s):

Yi He ◽

Lei Xie ◽

Shixiang Ding ◽

Yujia Long ◽

Xinyi Zhou ◽

...

Keyword(s):

Zinc Oxide ◽

Energy Storage ◽

Active Sites ◽

High Performance ◽

Electronic Conductivity ◽

Wide Distribution ◽

Energy Storage Materials ◽

Core Shell ◽

Storage Materials ◽

Hybrid Supercapacitors

Although the zinc oxide (ZnO) with wide distribution is one of the most attractive energy storage materials, the low electronic conductivity and insufficient active sites of bulk ZnO increase the...

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Modification of a polymer gate insulator by zirconium oxide doping for low temperature, high performance indium zinc oxide transistors

RSC Advances ◽

10.1039/c4ra08548e ◽

2014 ◽

Vol 4 (86) ◽

pp. 45742-45748 ◽

Cited By ~ 13

Author(s):

Byeong-Geun Son ◽

So Yeon Je ◽

Hyo Jin Kim ◽

Jae Kyeong Jeong

Keyword(s):

Zinc Oxide ◽

Low Temperature ◽

Zirconium Oxide ◽

High Performance ◽

Gate Insulator ◽

Indium Zinc Oxide

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Improved inter-yarn friction and ballistic impact performance of zinc oxide nanowire coated ultra-high molecular weight polyethylene (UHMWPE)

Polymer ◽

10.1016/j.polymer.2021.124125 ◽

2021 ◽

pp. 124125

Author(s):

Kelsey Steinke ◽

Henry A. Sodano

Keyword(s):

Molecular Weight ◽

Zinc Oxide ◽

High Molecular Weight ◽

Ballistic Impact ◽

Impact Performance ◽

Zinc Oxide Nanowire ◽

Ultra High Molecular Weight

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The Characteristics of Aluminum-Gallium-Zinc-Oxide Ultraviolet Phototransistors by Co-Sputtering Method

Electronics ◽

10.3390/electronics10050631 ◽

2021 ◽

Vol 10 (5) ◽

pp. 631

Author(s):

Wei-Lun Huang ◽

Sheng-Po Chang ◽

Cheng-Hao Li ◽

Shoou-Jinn Chang

Keyword(s):

Zinc Oxide ◽

Thin Film Transistors ◽

High Performance ◽

Wide Bandgap ◽

Visible Light Region ◽

Current Ratio ◽

Rejection Ratio ◽

Light Region ◽

Sputtering Power ◽

Solar Blind

In this thesis, Aluminum-Gallium-Zinc oxide (AGZO) photo thin film transistors (PTFTs) fabricated by the co-sputtered method are investigated. The transmittance and absorption show that AGZO is highly transparent across the visible light region, and the bandgap of AGZO can be tuned by varying the co-sputtering power. The AGZO TFT demonstrates high performance with a threshold voltage (VT) of 0.96 V, on/off current ratio of 1.01 × 107, and subthreshold swing (SS) of 0.33 V/dec. Besides, AGZO has potential for solar-blind applications because of its wide bandgap. The AGZO PTFT of this research can achieve a rejection ratio of 4.31 × 104 with proper sputtering power and a rising and falling time of 35.5 s and 51.5 s.

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