Understanding and quantifying electron beam effects during in situ TEM nanomechanical tensile testing on metal thin films

2021 ◽  
pp. 117441
Author(s):  
Sandra Stangebye ◽  
Yin Zhang ◽  
Saurabh Gupta ◽  
Ting Zhu ◽  
Olivier Pierron ◽  
...  
2003 ◽  
Vol 51 (7) ◽  
pp. 1937-1943 ◽  
Author(s):  
R.C. Hugo ◽  
H. Kung ◽  
J.R. Weertman ◽  
R. Mitra ◽  
J.A. Knapp ◽  
...  

Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.


2017 ◽  
Vol 686 ◽  
pp. 44-48 ◽  
Author(s):  
Wei Wang ◽  
Xianwei Bai ◽  
Xiangxiang Guan ◽  
Xi Shen ◽  
Yuan Yao ◽  
...  

2001 ◽  
Author(s):  
M. A. Haque ◽  
M. T. A. Saif

Abstract We present a MEMS-based technique for in-situ uniaxial tensile testing of freestanding thin films inside SEM and TEM. It integrates a freestanding thin film specimen with MEMS force sensors and structures to produce an on-chip tensile testing facility. Cofabrication of the specimen with force and displacement measuring mechanisms produces the following unique features: 1) Quantitative experimentation can be carried out in both SEM and TEM, 2) No extra gripping mechanism is required, 3) Specimen misalignment can be eliminated, 4) Pre-stress in specimen can be determined, and 5) Specimens with micrometer to nanometer thickness can be tested. We demonstrate the technique by testing a 200-nanometer thick Aluminum specimen in-situ in SEM. Significant strengthening and anelasticity were observed at this size scale.


1993 ◽  
Vol 323 ◽  
Author(s):  
Yujing Wu ◽  
Elizabeth G. Jacobs ◽  
Cyrus Pouraghabagher ◽  
Russell F. Pinizzotto

AbstractThe formation and growth of Cu6Sn5 and Cu3Sn at the interface of Sn-Pb solder/copper substrate are factors which affect the solderability and reliability of electronic solder joints. The addition of particles such as Ni to eutectic Sn-Pb solder drastically affects the activation energies of formation for both intermetallics. This study was performed to understand the mechanisms of intermetallic formation and the effects of Ni on intermetallic growth. Cu/Sn and Cu/Sn/Ni thin films were deposited by evaporation and observed in the TEM in real time using a hot stage. The diffusion of Sn through Cu6Sn5 and Cu3Sn followed by reaction with Cu must occur for intermetallic formation and growth to take place. Ni is an effective diffusion barrier which prevents Sn from diffusing into Cu.


2005 ◽  
Vol 875 ◽  
Author(s):  
Marc Legros ◽  
Gerhard Dehm ◽  
T. John Balk

AbstractTo investigate the origin of the high strength of thin films, in-situ cross-sectional TEM deformation experiments have been performed on several metallic films attached to rigid substrates. Thermal cycles, comparable to those performed using laser reflectometry, were applied to thin foils inside the TEM and dislocation motion was recorded dynamically on video. These observations can be directly compared to the current models of dislocation hardening in thin films. As expected, the role of interfaces is crucial, but, depending on their nature, they can attract or repel dislocations. When the film/interface holds off dislocations, experimental values of film stress match those predicted by the Nix-Freund model. In contrast, the attracting case leads to higher stresses that are not explained by this model. Two possible hardening scenarios are explored here. The first one assumes that the dislocation/interface attraction reduces dislocation mobility and thus increases the yield stress of the film. The second one focuses on the lack of dislocation nucleation processes in the case of attracting interfaces, even though a few sources have been observed in-situ.


2021 ◽  
pp. 117505
Author(s):  
Mehrdad T Kiani ◽  
Lucia T Gan ◽  
Rachel Traylor ◽  
Rui Yang ◽  
Christopher M Barr ◽  
...  

2019 ◽  
Vol 181 ◽  
pp. 148-159 ◽  
Author(s):  
Christian Ebner ◽  
Jagannathan Rajagopalan ◽  
Christina Lekka ◽  
Christian Rentenberger

Author(s):  
Daniel Bufford ◽  
Douglas Stauffer ◽  
William Mook ◽  
S.A. Syed Asif ◽  
Brad Boyce ◽  
...  

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