Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes

2005 ◽  
Vol 252 (4) ◽  
pp. 1153-1158 ◽  
Author(s):  
Enise Ayyildiz ◽  
Hidayet Cetin ◽  
Zs. J. Horváth
Keyword(s):  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Temperature Dependent

A Subcircuit SPICE Model for SiC Charge-Balance Schottky Diodes

2020 ◽  
Vol 1004 ◽  
pp. 945-952
Author(s):  
Collin W. Hitchcock ◽  
Xiang Zhou ◽  
Gyanesh Pandey ◽  
Reza Ghandi ◽  
Alexander Bolotnikov ◽  
...  
Keyword(s):  
Room Temperature ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Electrical Behavior ◽  
Charge Balance ◽  
Temperature Dependent ◽  
Proper Selection ◽  
Spice Model ◽  
Proposed Model ◽  
Selection Of

The electrical behavior of silicon carbide charge-balance (CB) Schottky/JBS diodes is examined. Based on the observed electrical characteristics, a subcircuit SPICE model for the experimental devices is proposed and validated against the data. The proposed model consists of a standard SPICE diode with custom parameters along with a network of discrete resistive and reactive subcircuit elements required to replicate the complex static and dynamic behavior of the experimental devices. With proper selection of component values, static, dynamic, and temperature-dependent device behavior are well modelled from room temperature to 150°C.

scholarly journals Reduction of reverse leakage current at the TiO2/GaN interface in field plate Ni/Au/n-GaN Schottky diodes

2021 ◽  
Vol 24 (04) ◽  
pp. 399-406
Author(s):  
A.M. Goriachko ◽  
◽  
M.V. Strikha ◽  
◽  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Temperature Dependent ◽  
Field Plate ◽  
Reverse Leakage Current ◽  
Plate Length ◽  
Fabrication Procedure ◽  
Field Oxide

This paper presents the fabrication procedure of TiO2 passivated field plate Schottky diode and gives a comparison of Ni/Au/n-GaN Schottky barrier diodes without field plate and with field plate of varying diameters from 50 to 300 µm. The influence of field oxide (TiO2) on the leakage current of Ni/Au/n-GaN Schottky diode was investigated. This suggests that the TiO2 passivated structure reduces the reverse leakage current of Ni/Au/n-GaN Schottky diode. Also, the reverse leakage current of Ni/Au/n-GaN Schottky diodes decreases as the field plate length increases. The temperature-dependent electrical characteristics of TiO2 passivated field plate Ni/Au/n-GaN Schottky diodes have shown an increase of barrier height within the temperature range 300…475 K.

Investigation of temperature dependent electrical characteristics on Au/Ni/β-Ga 2 O 3 Schottky diodes

2018 ◽  
Vol 119 ◽  
pp. 212-217 ◽  
Author(s):  
Ang Li ◽  
Qian Feng ◽  
Jincheng Zhang ◽  
Zhuangzhuang Hu ◽  
Zhaoqing Feng ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Temperature Dependent

Analysis of temperature dependent electrical characteristics of Au/n-GaAs/GaAs structures in a wide temperature range

Vacuum ◽  
2008 ◽  
Vol 83 (2) ◽  
pp. 276-281 ◽  
Author(s):  
A. Bengi ◽  
S. Altındal ◽  
S. Özçelik ◽  
S.T. Agaliyeva ◽  
T.S. Mammadov
Keyword(s):  
Wide Temperature Range ◽  
Electrical Characteristics ◽  
Temperature Dependent ◽  
Temperature Range

On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes

2006 ◽  
Vol 83 (3) ◽  
pp. 577-581 ◽  
Author(s):  
M.M. Bülbül ◽  
S. Zeyrek ◽  
Ş. Altındal ◽  
H. Yüzer
Keyword(s):  
Series Resistance ◽  
Schottky Diodes ◽  
Temperature Dependent ◽  
Dependent Series

Temperature Sensors Based on AlN/4H-SiC Diodes

2021 ◽  
Vol 13 (7) ◽  
pp. 1318-1323
Author(s):  
Myeong-Cheol Shin ◽  
Dong-Hyeon Kim ◽  
Seong-Woo Jung ◽  
Michael A. Schweitz ◽  
Sang-Mo Koo
Keyword(s):  
Annealing Temperature ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Temperature Sensors ◽  
Electrical Characteristics ◽  
Voltage Range ◽  
Radio Frequency Sputtering ◽  
Sensing Applications ◽  
Current Voltage ◽  
Dc Bias

ABSTRACTThis study report on the formation of AlN/SiC heterostructure Schottky diodes for use of temperature sensing applications enhance the sensitivity. We analyzed the sensitivity of the AlN/SiC Schottky diode sensor depending on the annealing temperature. AlN/4H-SiC Schottky diodes were fabricated by depositing aluminum nitride (AlN) thin film on 4H/SiC by radio frequency sputtering. The forward bias electrical characteristics were determined under DC bias (in the voltage range of 0–1.5 V). The ideality factor, barrier height, and sensitivity were derived through current–voltage–temperature (I–V–T) measurements in the temperature range of 300–500 K. The sensitivity of the AlN/4H-SiC Schottky barrier diode ranged from 2.5–5.0 mV/K.

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