High-throughput synthesis and characterization of Mg1−xCaxO films as a lattice and valence-matched gate dielectric for ZnO based field effect transistors

2006 ◽  
Vol 252 (7) ◽  
pp. 2507-2511 ◽  
Author(s):  
J. Nishii ◽  
A. Ohtomo ◽  
M. Ikeda ◽  
Y. Yamada ◽  
K. Ohtani ◽  
...  
Keyword(s):  
High Throughput ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Synthesis And Characterization

scholarly journals Synthesis and Characterization of a Pyromellitic Diimide-Based Polymer with C- and N-Main Chain Links: Matrix for Solution-Processable n-Channel Field-Effect Transistors

2011 ◽  
Vol 1 (1) ◽  
pp. 136-140 ◽  
Author(s):  
Srinivas Kola ◽  
Noah J. Tremblay ◽  
Ming-Ling Yeh ◽  
Howard E. Katz ◽  
Stuart B. Kirschner ◽  
...  
Keyword(s):  
Field Effect ◽  
Main Chain ◽  
Field Effect Transistors ◽  
Synthesis And Characterization ◽  
C And N ◽  
Solution Processable ◽  
Chain Links

Thin film field-effect transistors of 2,6-diphenyl anthracene (DPA)

2015 ◽  
Vol 51 (59) ◽  
pp. 11777-11779 ◽  
Author(s):  
Jie Liu ◽  
Huanli Dong ◽  
Zongrui Wang ◽  
Deyang Ji ◽  
Changli Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Synthesis And Characterization ◽  
Design Synthesis

The present work showed the design, synthesis and characterization of a high performance anthracene-based semiconductor.

Fabrication and Characterization of Directly-Assembled ZnO Nanowire Field Effect Transistors with Polymer Gate Dielectrics

2007 ◽  
Vol 7 (11) ◽  
pp. 4101-4105
Author(s):  
Ahnsook Yoon ◽  
Woong-Ki Hong ◽  
Takhee Lee
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Electrical Characteristics ◽  
Zno Nanowire ◽  
Device Structure

We report the fabrication and electrical characterization of ZnO nanowire field effect transistors (FETs). Dielectrophoresis technique was used to directly align ZnO nanowires between lithographically prepatterned source and drain electrodes, and spin-coated polyvinylphenol (PVP) polymer thin layer was used as a gate dielectric layer in "top-gate" FET device configuration. The electrical characteristics of the top-gate ZnO nanowire FETs were found to be comparable to the conventional "bottom-gate" nanowire FETs with a SiO2 gate dielectric layer, suggesting the directly-assembled nanowire FET with a polymer gate dielectric layer is a useful device structure of nanowire FETs.

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