Influences of oxygen partial pressure on structure and related properties of ZrO2 thin films prepared by electron beam evaporation deposition

Ga2O3 thin films were fabricated by the electron-beam evaporation technique at a varying oxygen partial pressure from 0 to 2.0 × 10−2 Pa. The effect of oxygen partial pressure on the crystalline structure and optical properties of the Ga2O3 films was analyzed using sophisticated techniques including X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Raman spectroscopy, spectroscopic ellipsometry, ultraviolet-visible spectroscopy and a laser-induced damage test system. The correlation between the oxygen partial pressure and the film’s properties in optics and materials were investigated. XRD and Raman revealed that all films were amorphous in spite of applying a varying oxygen partial pressure. With the change of oxygen partial pressure, XPS data indicated that the content of oxygen in the Ga2O3 films could be broadly modulable. As a result, a changeable refractive index of the Ga2O3 film is realizable and a variable blue-shift of absorption edges in transmittance spectra of the films is achievable. Moreover, the damage threshold value varied from 0.41 to 7.51 J/cm2 according to the rise of oxygen partial pressure. These results demonstrated that the optical properties of Ga2O3 film can be broadly tunable by controlling the oxygen content in the film.

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Influence of oxygen partial pressure on the optical properties of electron beam evaporated vanadium pentoxide thin films

Optical Materials ◽

10.1016/s0925-3467(97)00168-7 ◽

1998 ◽

Vol 10 (2) ◽

pp. 101-107 ◽

Cited By ~ 34

Author(s):

C.V Ramana ◽

O.M Hussain ◽

S Uthanna ◽

B Srinivasulu Naidu

Keyword(s):

Thin Films ◽

Optical Properties ◽

Electron Beam ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Vanadium Pentoxide

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Structural, Optical and Electrical Properties of Electron Beam Evaporated Tioxny Films as Selective Solar Absorber Coatings

Advances in Materials Science and Engineering ◽

10.33140/jamser.04.01.05 ◽

2020 ◽

Vol 4 (1) ◽

Keyword(s):

Electron Beam ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Solar Spectrum ◽

Single Layer ◽

Electron Beam Evaporation ◽

Oxygen Flow ◽

Solar Absorptance ◽

Solar Absorber ◽

Xrd Diffraction

Titanium oxinitride (TiOx Ny ) solar absorber coatings were deposited at different oxygen partial pressures onto Cu, Si and glass substrates using electron beam evaporation technique. XRD diffraction patterns evidenced (111), (200) and (220) orientation of TiNx phase. The preferred orientation of the films changed with oxygen partial pressure. XPS revealed the intensity of both Ti 2P3/2 and Ti 2P1/2 increases as a function of oxygen flow, and also shifted towards higher binding energy, indicating more oxidized state of Ti species than that of TiO2 due to incorporation of nitrogen atoms. Formation of uniformly distributed spherical like particles and an increase in surface roughness of the TiOx Ny films were observed as a function of oxygen partial pressure as depicted from SEM and AFM, respectively. Ellipsometric and resistivity measurements showed a shift from metallic to semiconductor behaviour of the TiOx Ny films as oxygen flow changed. A solar absorptance value of 0.94 in the solar spectrum region and a low thermal emittance value of 0.05 were achieved for the TiOx Ny solar absorber coatings prepared at the oxygen partial pressure of 7.5x10-5 Torr due to both interference and intrinsic absorption. This study confirmed that a single layer of TiOx Ny film can be a good candidate as selective solar absorber.

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