Phase transition, effective mass and carrier mobility of MoS2 monolayer under tensile strain

2015 ◽  
Vol 325 ◽  
pp. 27-32 ◽  
Author(s):  
Sheng Yu ◽  
Hao D. Xiong ◽  
Kwesi Eshun ◽  
Hui Yuan ◽  
Qiliang Li
Surfaces ◽  
2020 ◽  
Vol 4 (1) ◽  
pp. 1-8
Author(s):  
Tomasz Kosmala ◽  
Pawel Palczynski ◽  
Matteo Amati ◽  
Luca Gregoratti ◽  
Hikmet Sezen ◽  
...  

Here, we present a proof-of-concept experiment where phase engineering at the nanoscale of 2D transition metal dichalcogenides (TMDC) flakes (from semiconducting 2H phase to metallic 1T phase) can be achieved by thermal annealing of a TMDC/Au/mica system. The local dewetting of Au particles and resulting tensile strain produced on the TMDC flakes, strongly bound to the Au surface through effective S-Au bonds, can induce a local structural phase transition. An important role is also played by the defects induced by the thermal annealing: when vacancies are present, the threshold strain needed to trigger the phase transition is significantly reduced. Scanning photoelectron microscopy (SPEM) was revealed to be the perfect tool to monitor the described phenomena.


2021 ◽  
Author(s):  
Priya kaushal ◽  
Tarun Chaudhary ◽  
Gargi Khanna

Abstract The present work is based on the computational study of MoS2 monolayer and effect of tensile strain on its atomic level structure. The bandgap for MoS2 monolayer, defected MoS2 monolayer and Silicon-doped monolayer are 1.82 eV (direct bandgap), 0.04 (indirect bandgap) and 1.25eV (indirect bandgap), respectively. The impact of tensile strain (0-0.7%) on the bandgap and effective mass of charge carriers of these three MoS2 structure has been investigated. The bandgap decrease of 5.76%, 31.86% and 6.03% has been observed in the three structures for biaxial strain while the impact of uniaxial strain is quite low. The impact of higher temperature on the bandgap under biaxial tensile strain has been also analyzed in this paper. These observations are extremely important for 2D material-based research for electronic applications.


2019 ◽  
Vol 34 (01) ◽  
pp. 1950003
Author(s):  
Yu-Qiang Cui ◽  
Zhong-Liang Pan

We investigate the finite-temperature and zero quark chemical potential QCD chiral phase transition of strongly interacting matter within the two-flavor Nambu–Jona-Lasinio (NJL) model as well as the proper time regularization. We use two different regularization processes, as discussed in Refs. 36 and 37, separately, to discuss how the effective mass M varies with the temperature T. Based on the calculation, we find that the M of both regularization schemes decreases when T increases. However, for three different parameter sets, quite different behaviors will show up. The results obtained by the method in Ref. 36 are very close to each other, but those in Ref. 37 are getting farther and farther from each other. This means that although the method in Ref. 37 seems physically more reasonable, it loses the advantage in Ref. 36 of a small parameter dependence. In addition, we also, find that two regularization schemes provide similar results when T [Formula: see text] 100 MeV, while when T is larger than 100 MeV, the difference becomes obvious: the M calculated by the method in Ref. 36 decreases more rapidly than that in Ref. 37.


2017 ◽  
Vol 5 (23) ◽  
pp. 5772-5779 ◽  
Author(s):  
Viet-Anh Ha ◽  
Francesco Ricci ◽  
Gian-Marco Rignanese ◽  
Geoffroy Hautier

We demonstrate through first principles computations how the metal–oxygen–metal angle directly drives the hole effective mass (thus the carrier mobility) in p-type s-orbital-based oxides.


2019 ◽  
Vol 125 (5) ◽  
pp. 055104 ◽  
Author(s):  
Zhengshang Wang ◽  
Huan He ◽  
Xudong Cui ◽  
Hangtian Liu ◽  
Wenbin Qiu ◽  
...  

ACS Nano ◽  
2020 ◽  
Vol 14 (10) ◽  
pp. 13611-13618
Author(s):  
Julien Chaste ◽  
Imen Hnid ◽  
Lama Khalil ◽  
Chen Si ◽  
Alan Durnez ◽  
...  

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