Influence of heat generated by a Raman excitation laser on the structural analysis of thin amorphous silicon film

2016 ◽  
Vol 364 ◽  
pp. 302-307 ◽  
Author(s):  
P. Novák ◽  
J. Očenášek ◽  
L. Prušáková ◽  
V. Vavruňková ◽  
J. Savková ◽  
...  
2000 ◽  
Vol 609 ◽  
Author(s):  
Stefan Costea ◽  
Franco Gaspari ◽  
Tome Kosteski ◽  
Stefan Zukotynski ◽  
Nazir P. Kherani ◽  
...  

ABSTRACTThe change with time in the electrical conductivity of a hydrogenated-tritiated amorphous silicon film (a-Si:H:T) has been studied. The conductivity decreased with time after deposition. A model is developed to account for the decrease. The radioactive decay of tritium into helium produces energetic beta particles. Each β particle creates over 1500 electron-hole pairs in the film thereby increasing the conductivity of the film. The 3He atoms diffuse away leaving dangling bonds behind. We find that neutral dangling bonds (D0) are responsible for the decrease in conductivity by acting as recombination centers in the material.


2006 ◽  
Vol 45 (10A) ◽  
pp. 7675-7676 ◽  
Author(s):  
Jun-Dar Hwang ◽  
Tzu-Yi Chi ◽  
Jun-Chin Liu ◽  
Chung-Yuan Kung ◽  
In-Cha Hsein

2016 ◽  
Vol 36 (3) ◽  
pp. 0325001
Author(s):  
安倩 An Qian ◽  
侯金 Hou Jin ◽  
王文珍 Wang Wenzhen ◽  
杨春勇 Yang Chunyong ◽  
钟志有 Zhong Zhiyou

1996 ◽  
Vol 279 (1-2) ◽  
pp. 174-179 ◽  
Author(s):  
T. Yamaguchi ◽  
Y. Kaneko ◽  
A.H. Jayatissa ◽  
M. Aoyama

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