Contactless electroreflectance studies of the Fermi level position at the air/GaN interface: Bistable nature of the Ga-polar surface

2017 ◽  
Vol 396 ◽  
pp. 1657-1666 ◽  
Author(s):  
Łukasz Janicki ◽  
Marta Gładysiewicz ◽  
Jan Misiewicz ◽  
Kamil Klosek ◽  
Marta Sobanska ◽  
...  
Keyword(s):  
Fermi Level ◽  
Polar Surface ◽  
Fermi Level Position

Segregation tendencies of transition-metal dopants in wide band gap semiconductor nanowires

2020 ◽  
Vol 22 (48) ◽  
pp. 27987-27998
Author(s):  
Mehmet Aras ◽  
Sümeyra Güler-Kılıç ◽  
Çetin Kılıç
Keyword(s):  
Transition Metal ◽  
Fermi Level ◽  
Band Gap ◽  
Wide Band ◽  
Semiconductor Nanowires ◽  
Wide Band Gap ◽  
Semiconductor Nanowire ◽  
Fermi Level Position

The segregation tendency of an impurity in a semiconductor nanowire can be tuned by adjusting the Fermi level position.

What is the metal role an the fermi-level position at the interface with IV-IV compounds ?

1998 ◽  
Author(s):  
V. Aubry-Fortuna ◽  
J.-L. Perrossier ◽  
M. Mamor ◽  
F. Meyer ◽  
C. Frojdh ◽  
...  
Keyword(s):  
Fermi Level ◽  
Fermi Level Position

The Fermi level position in as-grown GaInNAs(Sb) quantum wells and layers studied by contactless electroreflectance

2008 ◽  
Vol 5 (2) ◽  
pp. 473-477 ◽  
Author(s):  
R. Kudrawiec ◽  
H. B. Yuen ◽  
S. R. Bank ◽  
H. P. Bae ◽  
M. A. Wistey ◽  
...  
Keyword(s):  
Fermi Level ◽  
Quantum Wells ◽  
Fermi Level Position

Sensitivity of Fermi level position at Ga-polar, N-polar, and nonpolarm-plane GaN surfaces to vacuum and air ambient

2016 ◽  
Vol 55 (5S) ◽  
pp. 05FA08 ◽  
Author(s):  
Łukasz Janicki ◽  
Manolo Ramírez-López ◽  
Jan Misiewicz ◽  
Grzegorz Cywiński ◽  
Michał Boćkowski ◽  
...  
Keyword(s):  
Fermi Level ◽  
Fermi Level Position

What is the metal role on the Fermi-level position at the interface with IV-IV compounds?

1997 ◽  
Author(s):  
V. Aubry-Fortuna ◽  
J.-L. Perrossier ◽  
M. Mamor ◽  
F. Meyer ◽  
C. Frojdh ◽  
...  
Keyword(s):  
Fermi Level ◽  
Fermi Level Position

Effect of Bias on Recovery Rates of Stressed Amorphous Silicon Mis Structures

1990 ◽  
Vol 192 ◽  
Author(s):  
W. B. Jackson ◽  
M. Hack
Keyword(s):  
Fermi Level ◽  
Amorphous Silicon ◽  
Conduction Band ◽  
Defect Formation ◽  
Defect States ◽  
Theoretical Understanding ◽  
Fermi Level Position ◽  
Electron Accumulation ◽  
Capacitance Voltage ◽  
Mis Structures

ABSTRACTThe effect of Fermi level position on the annealing of defects created by electron accumulation is investigated. Results indicate that holes accelerate the annealing of defects created by electrons confirming the theoretical understanding of the proximity compensated layer. Capacitance-voltage curves indicate that hole accumulation tends to create defect states located closer to the conduction band than electron accumulation–a result in agreement with energetics of defect formation.

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