What is the metal role on the Fermi-level position at the interface with IV-IV compounds?

1997 ◽  
Author(s):  
V. Aubry-Fortuna ◽  
J.-L. Perrossier ◽  
M. Mamor ◽  
F. Meyer ◽  
C. Frojdh ◽  
...  
Keyword(s):  
Fermi Level ◽  
Fermi Level Position

Segregation tendencies of transition-metal dopants in wide band gap semiconductor nanowires

2020 ◽  
Vol 22 (48) ◽  
pp. 27987-27998
Author(s):  
Mehmet Aras ◽  
Sümeyra Güler-Kılıç ◽  
Çetin Kılıç
Keyword(s):  
Transition Metal ◽  
Fermi Level ◽  
Band Gap ◽  
Wide Band ◽  
Semiconductor Nanowires ◽  
Wide Band Gap ◽  
Semiconductor Nanowire ◽  
Fermi Level Position

The segregation tendency of an impurity in a semiconductor nanowire can be tuned by adjusting the Fermi level position.

What is the metal role an the fermi-level position at the interface with IV-IV compounds ?

1998 ◽  
Author(s):  
V. Aubry-Fortuna ◽  
J.-L. Perrossier ◽  
M. Mamor ◽  
F. Meyer ◽  
C. Frojdh ◽  
...  
Keyword(s):  
Fermi Level ◽  
Fermi Level Position

The Fermi level position in as-grown GaInNAs(Sb) quantum wells and layers studied by contactless electroreflectance

2008 ◽  
Vol 5 (2) ◽  
pp. 473-477 ◽  
Author(s):  
R. Kudrawiec ◽  
H. B. Yuen ◽  
S. R. Bank ◽  
H. P. Bae ◽  
M. A. Wistey ◽  
...  
Keyword(s):  
Fermi Level ◽  
Quantum Wells ◽  
Fermi Level Position

Sensitivity of Fermi level position at Ga-polar, N-polar, and nonpolarm-plane GaN surfaces to vacuum and air ambient

2016 ◽  
Vol 55 (5S) ◽  
pp. 05FA08 ◽  
Author(s):  
Łukasz Janicki ◽  
Manolo Ramírez-López ◽  
Jan Misiewicz ◽  
Grzegorz Cywiński ◽  
Michał Boćkowski ◽  
...  
Keyword(s):  
Fermi Level ◽  
Fermi Level Position

Effect of Bias on Recovery Rates of Stressed Amorphous Silicon Mis Structures

1990 ◽  
Vol 192 ◽  
Author(s):  
W. B. Jackson ◽  
M. Hack
Keyword(s):  
Fermi Level ◽  
Amorphous Silicon ◽  
Conduction Band ◽  
Defect Formation ◽  
Defect States ◽  
Theoretical Understanding ◽  
Fermi Level Position ◽  
Electron Accumulation ◽  
Capacitance Voltage ◽  
Mis Structures

ABSTRACTThe effect of Fermi level position on the annealing of defects created by electron accumulation is investigated. Results indicate that holes accelerate the annealing of defects created by electrons confirming the theoretical understanding of the proximity compensated layer. Capacitance-voltage curves indicate that hole accumulation tends to create defect states located closer to the conduction band than electron accumulation–a result in agreement with energetics of defect formation.

Electronic Properties of Chemically Etched CdTe Thin Films: Role of Te for Back-Contact Formation

2001 ◽  
Vol 668 ◽  
Author(s):  
D. Kraft ◽  
A. Thiβen ◽  
M. Campo ◽  
M. Beerbom ◽  
T. Mayer ◽  
...  
Keyword(s):  
Fermi Level ◽  
Electronic Properties ◽  
Photoelectron Spectroscopy ◽  
Valence Band Maximum ◽  
Ex Situ ◽  
Back Contact ◽  
Experimental Conditions ◽  
Band Bending ◽  
Fermi Level Position ◽  
Contact Formation

ABSTRACTImprovement of electric back contact formation is one of the major issues of the CdTe thin film solar cell research. Chemical etching of CdTe before metallization is accepted to improve contact formation. It is believed that a CdTe/Te contact is formed by this procedure leading to a Fermi level position in the CdTe close to the valence band maximum for low contact resistance. We have studied the electronic properties of chemically etched CdTe surfaces with photoelectron spectroscopy. Etching of the samples was performed in air (“ex-situ“) as well as in an electrochemical setup directly attached to the UHV system (“in-situ“). The formation of a Te layer is clearly shown by (S)XPS. In contrast to previous studies we could not detect the formation of a p-CdTe surface for different experimental conditions. The detected Fermi level position indicates still band bending and hence a blocking Schottky barrier.

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