Friction and wear behaviors of molybdenum disulfide nanosheets under normal electric field

2018 ◽  
Vol 455 ◽  
pp. 527-532 ◽  
Author(s):  
Yuanming Zeng ◽  
Feng He ◽  
Quan Wang ◽  
Xiaohong Yan ◽  
Guoxin Xie
FlatChem ◽  
2017 ◽  
Vol 3 ◽  
pp. 16-25 ◽  
Author(s):  
Sangita Kumari ◽  
Harshal P. Mungse ◽  
Rashi Gusain ◽  
Niranjan Kumar ◽  
Hiroyuki Sugimura ◽  
...  

1993 ◽  
Vol 3 (8) ◽  
pp. 1201-1225 ◽  
Author(s):  
G. N�ron de Surgy ◽  
J.-P. Chabrerie ◽  
O. Denoux ◽  
J.-E. Wesfreid

1997 ◽  
Vol 473 ◽  
Author(s):  
Heng-Chih Lin ◽  
Edwin C. Kan ◽  
Toshiaki Yamanaka ◽  
Simon J. Fang ◽  
Kwame N. Eason ◽  
...  

ABSTRACTFor future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior. In this research, we used a simple two-spheres model and a three-dimensional Laplace solver to simulate the electric field and the tunneling current in the oxide region. Our results show that both quantities are strong functions of roughness spatial wavelength, associated amplitude, and oxide thickness. We found that RMS roughness itself cannot fully characterize surface roughness and that roughness has a larger effect for thicker oxide in terms of surface electric field and tunneling behavior.


Nanoscale ◽  
2019 ◽  
Vol 11 (33) ◽  
pp. 15550-15560 ◽  
Author(s):  
Aline Amorim Graf ◽  
Matthew J. Large ◽  
Sean P. Ogilvie ◽  
Yuanyang Rong ◽  
Peter J. Lynch ◽  
...  

We demonstrate the spontaneous edge functionalisation of molybdenum disulfide nanosheets exfoliated in acetone. Formation of molybdenum oxides explains the observed high-quality and stability of the dispersion in a low boiling point solvent.


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