Pulsed laser deposition of CoFe2O4/CoO hierarchical-type nanostructured heterojuction forming a Z-scheme for efficient spatial separation of photoinduced electron-hole pairs and highly active surface area

2019 ◽  
Vol 489 ◽  
pp. 584-594 ◽  
Author(s):  
Y. Popat ◽  
M. Orlandi ◽  
N. Patel ◽  
R. Edla ◽  
N. Bazzanella ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Surface Area ◽  
Pulsed Laser ◽  
Spatial Separation ◽  
Active Surface ◽  
Laser Deposition ◽  
Active Surface Area ◽  
Electron Hole ◽  
Highly Active

Aligned Photoelectrodes with Large Surface Area Prepared by Pulsed Laser Deposition

2012 ◽  
Vol 116 (14) ◽  
pp. 8102-8110 ◽  
Author(s):  
Jun Hong Noh ◽  
Jong Hoon Park ◽  
Hyun Soo Han ◽  
Dong Hoe Kim ◽  
Byung Suh Han ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Surface Area ◽  
Pulsed Laser ◽  
Large Surface Area ◽  
Laser Deposition

scholarly journals Performance and Mechanism of Photoelectrocatalytic Activity of MoSx/WO3 Heterostructures Obtained by Reactive Pulsed Laser Deposition for Water Splitting

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 871
Author(s):  
Vyacheslav Fominski ◽  
Roman Romanov ◽  
Dmitry Fominski ◽  
Alexey Soloviev ◽  
Oxana Rubinkovskaya ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser Deposition ◽  
Energy Band ◽  
Active Sites ◽  
Pulsed Laser ◽  
Photocurrent Density ◽  
Laser Deposition ◽  
Electron Hole ◽  
Glass Substrates ◽  
Catalytically Active

This work studies the factors that affect the efficiency of the photoelectrochemical hydrogen evolution reaction (HER) using MoSx/WO3 nano-heterostructures obtained by reactive pulsed laser deposition (RPLD) on glass substrates covered with fluorinated tin oxide (FTO). Another focus of the research is the potential of MoSx nanofilms as a precursor for MoOz(S) nanofilms, which enhance the efficiency of the photo-activated oxygen evolution reaction (OER) using the MoOz(S)/WO3/FTO heterostructures. The nanocrystalline WO3 film was created by laser ablation of a W target in dry air at a substrate temperature of 420 °C. Amorphous MoSx nanofilms (2 ≤ x ≤ 12) were obtained by laser ablation of an Mo target in H2S gas of varied pressure at room temperature of the substrate. Studies of the energy band structures showed that for all MoSx/WO3/FTO samples, photo-activated HER in an acid solution proceeded through the Z-scheme. The highest photoelectrochemical HER efficiency (a photocurrent density ~1 mA/cm2 at a potential of ~0 V under Xe lamp illumination (~100 mW/cm2)) was found for porous MoS4.5 films containing the highest concentration of catalytically active sites attributed to S ligands. During the anodic posttreatment of porous MoSx nanofilms, MoOz(S) films with a narrow energy band gap were formed. The highest OER efficiency (a photocurrent density ~5.3 mA/cm2 at 1.6 V) was detected for MoOz(S)/WO3/FTO photoanodes that were prepared by posttreatment of the MoSx~3.2 precursor. The MoOz(S) film contributed to the effective photogeneration of electron–hole pairs that was followed by the transport of photoelectrons from MoOz(S) into the WO3 film and the effective participation of holes possessing strong oxidation ability in the OER on the surface of the MoOz(S) film.

A dense La(Sr)Fe(Mn)O3−δ nano-film anode for intermediate-temperature solid oxide fuel cells

2015 ◽  
Vol 3 (7) ◽  
pp. 3586-3593 ◽  
Author(s):  
Young-Wan Ju ◽  
Junji Hyodo ◽  
Atsushi Inoishi ◽  
Shintaro Ida ◽  
Tatsumi Ishihara
Keyword(s):  
Fuel Cells ◽  
Solid Oxide Fuel Cells ◽  
Pulsed Laser ◽  
Active Surface ◽  
Metal Substrate ◽  
Solid Oxide ◽  
Laser Deposition ◽  
Active Surface Area ◽  
Oxide Fuel ◽  
Electrolyte Film

A dense La(Sr)Fe(Mn)O3−δ nano-film anode is fabricated between a La0.9Sr0.1Ga0.8Mg0.2O3−δ (LSGM) electrolyte film and a Ni–Fe metal substrate by pulsed laser deposition. The La(Sr)Fe(Mn)O3−δ nano-film improves power generation properties in solid oxide fuel cells with expanding anodic active surface area.

Microanalysis of silicate glass films grown on α-Al2O3 by pulsed-laser deposition

1993 ◽  
Vol 51 ◽  
pp. 438-439
Author(s):  
Michael P. Mallamaci ◽  
James Bentley ◽  
C. Barry Carter
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ceramic Materials ◽  
Laser Deposition ◽  
Triple Junctions ◽  
Ion Milling ◽  
Multicomponent Oxides ◽  
Glass Films

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.

Pulsed laser deposition of relaxor ferroelectric films

1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-261-Pr9-264
Author(s):  
M. Tyunina ◽  
J. Levoska ◽  
A. Sternberg ◽  
V. Zauls ◽  
M. Kundzinsh ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Relaxor Ferroelectric ◽  
Laser Deposition ◽  
Ferroelectric Films

Pulsed laser deposition of PbMg1/3Nb2/3O3 thin films and PbMg1/3Nb2/3O3/PbTiO3 multilayers

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-65-Pr11-69
Author(s):  
N. Lemée ◽  
H. Bouyanfif ◽  
J. L. Dellis ◽  
M. El Marssi ◽  
M. G. Karkut ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

SrBi2Nb2O9 ferroelectric thin films deposited by pulsed laser deposition on textured and epitaxied platinum electrodes

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Platinum Electrodes

Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Field Variable ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Ceramic Substrates ◽  
Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

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