Large-area adlayer-free single-layer h-BN film achieved by controlling intercalation growth

2019 ◽  
Vol 498 ◽  
pp. 143851 ◽  
Author(s):  
Yanwei He ◽  
Hao Tian ◽  
Alireza Khanaki ◽  
Wenhao Shi ◽  
Jason Tran ◽  
...  
Keyword(s):  
Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 956
Author(s):  
Philipp Taus ◽  
Adrian Prinz ◽  
Heinz D. Wanzenboeck ◽  
Patrick Schuller ◽  
Anton Tsenov ◽  
...  

Biomimetic structures such as structural colors demand a fabrication technology of complex three-dimensional nanostructures on large areas. Nanoimprint lithography (NIL) is capable of large area replication of three-dimensional structures, but the master stamp fabrication is often a bottleneck. We have demonstrated different approaches allowing for the generation of sophisticated undercut T-shaped masters for NIL replication. With a layer-stack of phase transition material (PTM) on poly-Si, we have demonstrated the successful fabrication of a single layer undercut T-shaped structure. With a multilayer-stack of silicon oxide on silicon, we have shown the successful fabrication of a multilayer undercut T-shaped structures. For patterning optical lithography, electron beam lithography and nanoimprint lithography have been compared and have yielded structures from 10 µm down to 300 nm. The multilayer undercut T-shaped structures closely resemble the geometry of the surface of a Morpho butterfly, and may be used in future to replicate structural colors on artificial surfaces.


2016 ◽  
Vol 16 (4) ◽  
pp. 3659-3663
Author(s):  
H Yu ◽  
L Zhang ◽  
X. H Li ◽  
H. Y Xu ◽  
Y. C Liu

The amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) were demonstrated based on a double-layer channel structure, where the channel is composed of an ultrathin nitrogenated a-IGZO (a-IGZO:N) layer and an undoped a-IGZO layer. The double-layer channel device showed higher saturation mobility and lower threshold-voltage shift (5.74 cm2/Vs, 2.6 V) compared to its single-layer counterpart (0.17 cm2/Vs, 7.23 V). The improvement can be attributed to three aspects: (1) improved carrier transport properties of the channel by the a-IGZO:N layer with high carrier mobility and the a-IGZO layer with high carrier concentration, (2) reduced interfacial trap density between the active channel and the gate insulator, and (3) higher surface flatness of the double-layer channel. Our study reveals key insights into double-layer channel, involving selecting more suitable electrical property for back-channel layer and more suitable interface modification for active layer. Meanwhile, room temperature fabrication amorphous TFTs offer certain advantages on better flexibility and higher uniformity over a large area.


RSC Advances ◽  
2019 ◽  
Vol 9 (28) ◽  
pp. 16057-16057
Author(s):  
Maria Hasan ◽  
Wang Meiou ◽  
Liu Yulian ◽  
Sami Ullah ◽  
Huy Q. Ta ◽  
...  

Correction for ‘Direct chemical vapor deposition synthesis of large area single-layer brominated graphene’ by Maria Hasan et al., RSC Adv., 2019, 9, 13527–13532.


Nano Letters ◽  
2020 ◽  
Author(s):  
Francesco Calavalle ◽  
Paul Dreher ◽  
Ananthu P. Surdendran ◽  
Wen Wan ◽  
Melanie Timpel ◽  
...  

ACS Nano ◽  
2014 ◽  
Vol 8 (5) ◽  
pp. 4961-4968 ◽  
Author(s):  
Woanseo Park ◽  
Jaeyoon Baik ◽  
Tae-Young Kim ◽  
Kyungjune Cho ◽  
Woong-Ki Hong ◽  
...  

2019 ◽  
Vol 1 (2) ◽  
pp. 643-655 ◽  
Author(s):  
Francesco Tumino ◽  
Carlo S. Casari ◽  
Matteo Passoni ◽  
Valeria Russo ◽  
Andrea Li Bassi

Molybdenum disulphide (MoS2) is a promising material for heterogeneous catalysis and novel 2D optoelectronic devices. In this work, single-layer MoS2 is synthesized on Au(111) by pulsed laser deposition, showing the potentialities of this technique in the synthesis of high-quality 2D materials films.


2019 ◽  
Vol 7 (10) ◽  
pp. 2978-2986 ◽  
Author(s):  
Hua Li ◽  
Jianfeng Wang ◽  
Shali Li ◽  
Jacques Robichaud ◽  
Dan Wang ◽  
...  

Crack-free large-area single-layer SiO2 inverse opal (IO) films similar to an inverse “moth's eye” structure, are fabricated. The effects of their porous structure on transmittance in the visible region are investigated.


2015 ◽  
Vol 127 (41) ◽  
pp. 12226-12231 ◽  
Author(s):  
Renhao Dong ◽  
Martin Pfeffermann ◽  
Haiwei Liang ◽  
Zhikun Zheng ◽  
Xiang Zhu ◽  
...  

2012 ◽  
Vol 1451 ◽  
pp. 45-49
Author(s):  
Dennis L. Pleskot ◽  
Jennifer R. Kyle ◽  
Maziar Ghazinejad ◽  
Shirui Guo ◽  
Isaac Ruiz ◽  
...  

ABSTRACTFluorescence Quenching Microscopy has been shown to be an effective means of characterizing graphene on the macroscale. Centimeter-scale CVD-grown pristine and doped graphene were manufactured in a high temperature (1000°C) furnace on pristine copper substrates. The copper was then etched away in a FeCl3solution and the graphene was coated with DCM-based fluorescent dye before being imaged in a fluorescence microscope. The fluorescence image was then image-processed using modified Matlab software. The resulting image showed clear contrast between the pristine graphene sheet and defects on the graphene surface, which revealed that fluorescence microscopy could determine the quality of a large region of graphene. Also, significant contrast was identified between single-layer and multi-layer regions, showing that this technique is also effective at determining the degree of uniformity within a graphene sample. Lastly, the fluorescence images showed contrast between doped and undoped regions of graphene.


Sign in / Sign up

Export Citation Format

Share Document