Schottky barrier engineering with a metal nitride–double interlayer–semiconductor contact structure to achieve high thermal stability and ultralow contact resistivity
2019 ◽
Vol 7
(35)
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pp. 10953-10960
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2010 ◽
Vol 159
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pp. 81-86
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Keyword(s):
2005 ◽
Vol 148
(2)
◽
pp. 161-168
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2011 ◽
Vol 11
(5)
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pp. 4639-4643
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Keyword(s):