Opening the germanene monolayer band gap using halogen atoms: An efficient approach studied by first-principles calculations

Using first principles calculations, we predicted that a direct-band-gap between 0.98 and 2.13 eV can be obtained in silicene by symmetrically and asymmetrically (Janus) functionalisation with halogen atoms and applying elastic tensile strain.

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Locating impurity and defect levels in the host band gap by first-principles calculations: Pure and Ce3+-doped YAlO3

Optical Materials ◽

10.1016/j.optmat.2021.110843 ◽

2021 ◽

Vol 113 ◽

pp. 110843

Author(s):

M.G. Brik ◽

C.-G. Ma ◽

M. Piasecki ◽

A. Suchocki

Keyword(s):

Band Gap ◽

First Principles ◽

First Principles Calculations ◽

Impurity And Defect Levels ◽

Defect Levels

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Band-gap engineering of CdS, CdSe and ZnSe first-principles calculations

2016 International Renewable and Sustainable Energy Conference (IRSEC) ◽

10.1109/irsec.2016.7983969 ◽

2016 ◽

Author(s):

Rachida Lamouri ◽

El Mehdi Salmani ◽

Hamid Ez-zahraouy ◽

Abdelilah Benyoussef

Keyword(s):

Band Gap ◽

First Principles ◽

First Principles Calculations ◽

Band Gap Engineering

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Strain-induced semimetal-to-semiconductor transition and indirect-to-direct band gap transition in monolayer 1T-TiS2

RSC Advances ◽

10.1039/c5ra16877e ◽

2015 ◽

Vol 5 (102) ◽

pp. 83876-83879 ◽

Cited By ~ 23

Author(s):

Chengyong Xu ◽

Paul A. Brown ◽

Kevin L. Shuford

Keyword(s):

Band Gap ◽

Electronic Properties ◽

Plane Strain ◽

Material Properties ◽

First Principles ◽

Tensile Strain ◽

First Principles Calculations ◽

Direct Band Gap ◽

Direct Band ◽

Uniform Plane

We have investigated the effect of uniform plane strain on the electronic properties of monolayer 1T-TiS2using first-principles calculations. With the appropriate tensile strain, the material properties can be transformed from a semimetal to a direct band gap semiconductor.

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An effective and efficient approach to p-type AlN by Be2:O codoping from first-principles calculations

Modern Physics Letters B ◽

10.1142/s0217984916502572 ◽

2016 ◽

Vol 30 (20) ◽

pp. 1650257

Author(s):

Meng Zhao ◽

Wenjun Wang ◽

Jun Wang ◽

Junwei Yang ◽

Weijie Hu ◽

...

Keyword(s):

First Principles ◽

Ionization Energy ◽

Hole Concentration ◽

Valence Band Maximum ◽

First Principles Calculations ◽

Mutual Compensation ◽

Efficient Approach ◽

P Type ◽

Codoping Method

Various Be:O-codoped AlN crystals have been investigated via first-principles calculations to evaluate the role of the different combinations in effectively and efficiently inducing p-type carriers. It is found that the O atom is favored to bond with two Be atoms. The formed Be2:O complexes decrease the acceptor ionization energy to 0.11 eV, which is 0.16 eV lower than that of an isolated Be in AlN, implying that the hole concentration could probably be increased by 2–3 orders of magnitude. The electronic structure of Be2:O-codoped AlN shows that the lower ionization energy can be attributed to the interaction between Be and O. The Be–O complexes, despite failing to induce p-type carriers for the mutual compensation of Be and O, introduce new occupied states on the valence-band maximum (VBM) and hence the energy needed for the transition of electrons to the acceptor level is reduced. Thus, the Be2:O codoping method is expected to be an effective and efficient approach to realizing p-type AlN.

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First-Principles Study on the Stabilities, Electronic and Optical Properties of GexSn1-xSe Alloys

Nanomaterials ◽

10.3390/nano8110876 ◽

2018 ◽

Vol 8 (11) ◽

pp. 876 ◽

Cited By ~ 1

Author(s):

Qi Qian ◽

Lei Peng ◽

Yu Cui ◽

Liping Sun ◽

Jinyan Du ◽

...

Keyword(s):

Optical Properties ◽

Solar Cells ◽

Band Gap ◽

Electronic Properties ◽

First Principles ◽

Future Application ◽

First Principles Calculations ◽

Electronic And Optical Properties ◽

Direct Bandgap ◽

The Future

We systematically study, by using first-principles calculations, stabilities, electronic properties, and optical properties of GexSn1-xSe alloy made of SnSe and GeSe monolayers with different Ge concentrations x = 0.0, 0.25, 0.5, 0.75, and 1.0. Our results show that the critical solubility temperature of the alloy is around 580 K. With the increase of Ge concentration, band gap of the alloy increases nonlinearly and ranges from 0.92 to 1.13 eV at the PBE level and 1.39 to 1.59 eV at the HSE06 level. When the Ge concentration x is more than 0.5, the alloy changes into a direct bandgap semiconductor; the band gap ranges from 1.06 to 1.13 eV at the PBE level and 1.50 to 1.59 eV at the HSE06 level, which falls within the range of the optimum band gap for solar cells. Further optical calculations verify that, through alloying, the optical properties can be improved by subtle controlling the compositions. Since GexSn1-xSe alloys with different compositions have been successfully fabricated in experiments, we hope these insights will contribute to the future application in optoelectronics.

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First-Principles Calculations of Titanium Dopants in Alumina

Materials Science Forum ◽

10.4028/www.scientific.net/msf.475-479.3095 ◽

2005 ◽

Vol 475-479 ◽

pp. 3095-3098

Author(s):

Katsuyuki Matsunaga ◽

Teruyasu Mizoguchi ◽

Atsutomo Nakamura ◽

Takahisa Yamamoto ◽

Yuichi Ikuhara

Keyword(s):

Band Gap ◽

First Principles ◽

Electronic Structures ◽

First Principles Calculations ◽

Pseudopotential Calculations ◽

Formation Energies

First-principles pseudopotential calculations were performed to investigate atomic and electronic structures of titanium (Ti) dopants in alumina (Al2O3). It was found that a substitutional Ti3+ defect induced an extra level occupied by one electron within the band gap of Al2O3. When two or more substitutional Ti3+ defects were located closely to each other, the defect-induced levels exhibited strong bonding interactions, and their formation energies decreased with increasing numbers of Ti3+ defects. This indicates that association and clustering of substitutional Ti3+ defects in Al2O3 can take place due to the interaction of the defect-induced levels.

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Structure and electronic properties of C2N/graphene predicted by first-principles calculations

RSC Advances ◽

10.1039/c5ra26873g ◽

2016 ◽

Vol 6 (34) ◽

pp. 28484-28488 ◽

Cited By ~ 25

Author(s):

Dandan Wang ◽

DongXue Han ◽

Lei Liu ◽

Li Niu

Keyword(s):

Band Gap ◽

Electronic Properties ◽

Water Splitting ◽

First Principles ◽

First Principles Calculations ◽

Gap Opening

Graphene band gap opening is achieved when integrated with C2N. C2N/graphene heterostructures are promising materials for FETs and water splitting.

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COMPARATIVE STUDY OF THE STRUCTURAL AND ELECTRONIC PROPERTIES OF BN(5, 5) AND C(5, 5) NANOTUBES UNDER PRESSURE

International Journal of Modern Physics B ◽

10.1142/s0217979210056876 ◽

2010 ◽

Vol 24 (24) ◽

pp. 4851-4859

Author(s):

KAIHUA HE ◽

GUANG ZHENG ◽

GANG CHEN ◽

QILI CHEN ◽

MIAO WAN ◽

...

Keyword(s):

High Pressure ◽

Comparative Study ◽

Charge Density ◽

Band Gap ◽

Electronic Properties ◽

Cross Section ◽

First Principles ◽

First Principles Calculations ◽

Zinc Blende ◽

Structural And Electronic Properties

The structural and electronic properties of BN(5, 5) and C(5, 5) nanotubes under pressure are studied by using first principles calculations. In our study range, BN(5, 5) undergoes obvious elliptical distortion, while for C(5, 5) the cross section first becomes an ellipse and then, under further pressure, is flattened. The band gap of BN(5, 5) decreases with increasing pressure, which is inverse to that of zinc blende BN, whereas for C(5, 5) the metallicity is always preserved under high pressure. The population of charge density indicates that intertube bonding is formed under pressure. We also find that BN(5, 5) may collapse, and a new polymer material based on C(5, 5) is formed by applying pressure.

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A New Phase of GaN

Journal of Chemistry ◽

10.1155/2016/8612892 ◽

2016 ◽

Vol 2016 ◽

pp. 1-9 ◽

Cited By ~ 8

Author(s):

Qingyang Fan ◽

Changchun Chai ◽

Qun Wei ◽

Jionghao Yang ◽

Peikun Zhou ◽

...

Keyword(s):

Band Gap ◽

First Principles ◽

Elastic Anisotropy ◽

Ambient Pressure ◽

Young Modulus ◽

Structure Study ◽

First Principles Calculations ◽

Hydrogen Storage Material ◽

Storage Material ◽

New Phase

The structural, mechanical, and electronic properties of the orthorhombic GaN (Pnma-GaN) are investigated at ambient pressure by using first-principles calculations method with the ultrasoft pseudopotential scheme. The elastic constants and phonon calculations reveal Pnma-GaN is mechanically and dynamically stable at ambient pressure. The calculated Young modulus of Pnma-GaN is 170 GPa, which is the three-fifths of wurtzite-GaN. Electronic structure study shows that Pnma-GaN is a direct semiconductor with band gap of 1.847 eV. The anisotropic calculation shows that wurtzite-GaN has a smaller elastic anisotropy than that of Pnma-GaN in Young’s modulus. In addition, when the composition of aluminum increases from 0 to 0.063 in the alloy, the band gap decreases initially and increases afterward for Pnma-Ga1−xAlxN, while, for wurtzite-Ga1−xAlxN, the band gap increases with the increasing compositionx. Due to the structural porous feature, Pnma-GaN can also be expected to be a good hydrogen storage material.

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