Al-Ti-W alloys deposited by magnetron sputtering: effective barrier to prevent steel hydrogen embrittlement

2021 ◽  
pp. 150786
Author(s):  
Issam Lakdhar ◽  
Akram Alhussein ◽  
Julien Capelle ◽  
Juan Creus
Keyword(s):  
Hydrogen Embrittlement ◽  
Magnetron Sputtering ◽  
Effective Barrier

Stress Relaxation and the Formation of Silicides in the Process of the Crystallization of NI-NB Films on SI

1991 ◽  
Vol 49 ◽  
pp. 898-899
Author(s):  
N. Rozhanski ◽  
V. Lifshitz
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Integrated Circuits ◽  
Direct Evidence ◽  
Alloy Film ◽  
Diffusion Barriers ◽  
Effective Barrier

Thin films of amorphous Ni-Nb alloys are of interest since they can be used as diffusion barriers for integrated circuits on Si. A native SiO2 layer is an effective barrier for Ni diffusion but it deformation during the crystallization of the alloy film lead to the appearence of diffusion fluxes through it and the following formation of silicides. This study concerns the direct evidence of the action of stresses in the process of the crystallization of Ni-Nb films on Si and the structure of forming NiSi2 islands.

Effect of the Electro-Chemical Hydrogen Charging Time on Hydrogen Embrittlement of X70 Steel Using for Gas Pipeline

2013 ◽  
Vol 51 (11) ◽  
pp. 813-820
Author(s):  
Chi-Eun Sung ◽  
Hyeon-Jee Jeon ◽  
Jin-Kyung Lee ◽  
In-Soo Son ◽  
Sang-Pill Lee ◽  
...  
Keyword(s):  
Hydrogen Embrittlement ◽  
Gas Pipeline ◽  
Hydrogen Charging ◽  
Charging Time

Influence of magnetron sputtering conditions on the parameters of TiN coatings on steel substrates

2006 ◽  
Vol 2006 (suppl_23_2006) ◽  
pp. 269-274 ◽  
Author(s):  
R. Mirchev ◽  
V. Antonov ◽  
I. Iordanova ◽  
P. J. Kelly
Keyword(s):  
Magnetron Sputtering ◽  
Tin Coatings ◽  
Steel Substrates

High Quality HfO2 Film and Its Applications in Novel Poly-Si Devices

2002 ◽  
Vol 716 ◽  
Author(s):  
K.L. Ng ◽  
N. Zhan ◽  
M.C. Poon ◽  
C.W. Kok ◽  
M. Chan ◽  
...  
Keyword(s):  
Barrier Height ◽  
Nonvolatile Memory ◽  
Dielectric Material ◽  
Tunneling Current ◽  
Interface Layer ◽  
Si Substrate ◽  
Hfo2 Film ◽  
Effective Barrier Height ◽  
Effective Barrier ◽  
Nonvolatile Memory Devices

AbstractHfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.

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