Improvement of Metal-Oxide Films by Post Atmospheric Ar/O2 Plasma Treatment for Thin Film Transistors with High Mobility and Excellent Stability

2021 ◽  
pp. 150947
Author(s):  
Ravindra Naik Bukke ◽  
Narendra Naik Mude ◽  
Md Mobaidul Islam ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Oxide Films ◽  
High Mobility ◽  
Metal Oxide Films ◽  
O2 Plasma Treatment ◽  
O2 Plasma ◽  
Excellent Stability

Effect of O2 plasma treatment on density-of-states in a-IGZO thin film transistors

2016 ◽  
Vol 13 (1) ◽  
pp. 45-50 ◽  
Author(s):  
Xingwei Ding ◽  
Fei Huang ◽  
Sheng Li ◽  
Jianhua Zhang ◽  
Xueyin Jiang ◽  
...  
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Density Of States ◽  
Thin Film Transistors ◽  
O2 Plasma Treatment ◽  
O2 Plasma

scholarly journals Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O2 plasma treatment

2018 ◽  
Vol 150 ◽  
pp. 23-27 ◽  
Author(s):  
S. Knobelspies ◽  
A. Takabayashi ◽  
A. Daus ◽  
G. Cantarella ◽  
N. Münzenrieder ◽  
...  
Keyword(s):  
Thin Film ◽  
Contact Resistance ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
O2 Plasma Treatment ◽  
O2 Plasma

Effects of O2 plasma treatment on low temperature solution-processed zinc tin oxide thin film transistors

2013 ◽  
Vol 210 (9) ◽  
pp. 1745-1749 ◽  
Author(s):  
Jeong-Soo Lee ◽  
Seung-Min Song ◽  
Yong-Hoon Kim ◽  
Jang-Yeon Kwon ◽  
Min-Koo Han
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Plasma Treatment ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Tin Oxide ◽  
Temperature Solution ◽  
O2 Plasma Treatment ◽  
O2 Plasma

scholarly journals Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors

Materials ◽  
2017 ◽  
Vol 10 (6) ◽  
pp. 612 ◽  
Author(s):  
Jae Heo ◽  
Seungbeom Choi ◽  
Jeong-Wan Jo ◽  
Jingu Kang ◽  
Ho-Hyun Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film ◽  
Mobility Solution

Solution-processed lanthanum-doped Al2O3 gate dielectrics for high-mobility metal-oxide thin-film transistors

2018 ◽  
Vol 660 ◽  
pp. 814-818 ◽  
Author(s):  
Jaeyoung Kim ◽  
Seungbeom Choi ◽  
Jeong-Wan Jo ◽  
Sung Kyu Park ◽  
Yong-Hoon Kim
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film
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