Impact of Sn doping on the hydrogen detection characteristics of ZnO thin films: Insights from experimental and DFT combination

2021 ◽  
pp. 151585
Author(s):  
Zahira El khalidi ◽  
Ayoub Daouli ◽  
Hicham Jabraoui ◽  
Bouchaib Hartiti ◽  
Amal Bouich ◽  
...  
2015 ◽  
Vol 15 (11) ◽  
pp. 9184-9191 ◽  
Author(s):  
M. A. Islam ◽  
K. S. Rahman ◽  
F. Haque ◽  
N. A. Khan ◽  
M. Akhtaruzzaman ◽  
...  
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2012 ◽  
Vol 03 (11) ◽  
pp. 1781-1785 ◽  
Author(s):  
Nadia Chahmat ◽  
Ammar Haddad ◽  
Azzedine Ain-Souya ◽  
Rachid Ganfoudi ◽  
Nadir Attaf ◽  
...  

2011 ◽  
Vol 60 (7) ◽  
pp. 077505
Author(s):  
Wu Yan-Nan ◽  
Xu Ming ◽  
Wu Ding-Cai ◽  
Dong Cheng-Jun ◽  
Zhang Pei-Pei ◽  
...  

2015 ◽  
Vol 1109 ◽  
pp. 276-280
Author(s):  
I. Saurdi ◽  
Mohamad Hafiz Mamat ◽  
A.K. Shafura ◽  
Mohd Firdaus Malek ◽  
A. Ishak ◽  
...  

In this paper, the nanostructured Sn-doped ZnO thin films were prepared by Spin coating technique on glass substrates at various Sn doping of 0, 1, 1.5, 1, 2.0 and 3 at.%. The structural, optical and electrical properties were characterized by field emission scanning electron microscopy (FESEM), X-Ray Diffraction (XRD), UV-Vis-NIR and I-V measurement, respectively. The surface morphology reveals that the average particle size of nanostructured Sn-doped ZnO thin films decreased as the Sn concentrations increased. The results show all films are transparent in the visible region with average transmittance above 88%. Meanwhile, the resistivity of Sn-soped ZnO thin films was decreased when the Sn concentrations increased. Among all of Sn-doped ZnO thin films, the thin films doped with 2 at.% shows the optimum properties of average resistivity and transmittance were 7.7 x 102 Ω.Cm and 96%, respectively.


2015 ◽  
Vol 635 ◽  
pp. 290-294 ◽  
Author(s):  
N.H. Sheeba ◽  
Sunil C. Vattappalam ◽  
Johns Naduvath ◽  
P.V. Sreenivasan ◽  
Sunny Mathew ◽  
...  

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