Double‐Gate MoS 2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

2021 ◽  
pp. 2101036
Author(s):  
Jiali Yi ◽  
Xingxia Sun ◽  
Chenguang Zhu ◽  
Shengman Li ◽  
Yong Liu ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Full Range ◽  
Logic Circuits ◽  
Double Gate

Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

2019 ◽  
Vol 7 (29) ◽  
pp. 8855-8860 ◽  
Author(s):  
Janghyuk Kim ◽  
Marko J. Tadjer ◽  
Michael A. Mastro ◽  
Jihyun Kim
Keyword(s):  
Plasma Treatment ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors

2015 ◽  
Vol 111 ◽  
pp. 62-66 ◽  
Author(s):  
W. Mizubayashi ◽  
K. Fukuda ◽  
T. Mori ◽  
K. Endo ◽  
Y.X. Liu ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Fin Length

scholarly journals Analyses of Short Channel Effects of Single-Gate and Double-Gate Graphene Nanoribbon Field Effect Transistors

2016 ◽  
Vol 2016 ◽  
pp. 1-8 ◽  
Author(s):  
Hojjatollah Sarvari ◽  
Amir Hossein Ghayour ◽  
Zhi Chen ◽  
Rahim Ghayour
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Tight Binding ◽  
Graphene Nanoribbon ◽  
Basis Set ◽  
Double Gate ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

Short channel effects of single-gate and double-gate graphene nanoribbon field effect transistors (GNRFETs) are studied based on the atomistic pz orbital model for the Hamiltonian of graphene nanoribbon using the nonequilibrium Green’s function formalism. A tight-binding Hamiltonian with an atomistic pz orbital basis set is used to describe the atomistic details in the channel of the GNRFETs. We have investigated the vital short channel effect parameters such as Ion and Ioff, the threshold voltage, the subthreshold swing, and the drain induced barrier lowering versus the channel length and oxide thickness of the GNRFETs in detail. The gate capacitance and the transconductance of both devices are also computed in order to calculate the intrinsic cut-off frequency and switching delay of GNRFETs. Furthermore, the effects of doping of the channel on the threshold voltage and the frequency response of the double-gate GNRFET are discussed. We have shown that the single-gate GNRFET suffers more from short channel effects if compared with those of the double-gate structure; however, both devices have nearly the same cut-off frequency in the range of terahertz. This work provides a collection of data comparing different features of short channel effects of the single gate with those of the double gate GNRFETs. The results give a very good insight into the devices and are very useful for their digital applications.

Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work function

2013 ◽  
Vol 102 (16) ◽  
pp. 162104 ◽  
Author(s):  
T. Matsukawa ◽  
Y. X. Liu ◽  
W. Mizubayashi ◽  
J. Tsukada ◽  
H. Yamauchi ◽  
...  
Keyword(s):  
Work Function ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Amorphous Metal ◽  
Double Gate ◽  
Metal Gate

Analytical model for threshold voltage of double gate bilayer graphene field effect transistors

2014 ◽  
Vol 54 (1) ◽  
pp. 44-48 ◽  
Author(s):  
M. Saeidmanesh ◽  
M. Rahmani ◽  
H. Karimi ◽  
M. Khaledian ◽  
Razali Ismail
Keyword(s):  
Analytical Model ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Bilayer Graphene ◽  
Double Gate

Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors

2011 ◽  
Vol 470 ◽  
pp. 218-223
Author(s):  
Nobuya Mori ◽  
Yoshinari Kamakura ◽  
Genaddy Mil'nikov ◽  
Hideki Minari
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Correction Term ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Threshold Voltage Shift ◽  
Analytical Expression

Quantum-transport simulations of current-voltage characteristics are performed in ultra-small double-gate and gate-all-around metal-oxide-semiconductor field-effect-transistors (MOSFETs) with a single attractive ion in the channel region. The ion induces a threshold voltage shift, whose origin is attributed to an ion-induced barrier lowering (IIBL). An analytical expression for the IIBL in ultra-small MOSFETs is derived. The analytical expression for the IIBL consists of two terms: a term related to the potential curvature at the potential top and a correction term due to the screening effects. The analytical model reproduces reasonably well the stimulated IIBL in the subthreshold region.

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