A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors With a SiO2/High- $k$ Stacked Gate-Oxide Structure

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2572610 ◽

2016 ◽

Vol 63 (8) ◽

pp. 3291-3299 ◽

Author(s):

Sanjay Kumar ◽

Ekta Goel ◽

Kunal Singh ◽

Balraj Singh ◽

Mirgender Kumar ◽

...

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Electrical Characteristics ◽

Oxide Structure

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Two-dimensional analytical model for hetero-junction double-gate tunnel field-effect transistor with a stacked gate-oxide structure

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.054201 ◽

2017 ◽

Vol 56 (5) ◽

pp. 054201 ◽

Author(s):

Hui Fang Xu ◽

Bang Gui Guan

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Two Dimensional ◽

Oxide Structure ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2656630 ◽

2017 ◽

Vol 64 (3) ◽

pp. 960-968 ◽

Author(s):

Sanjay Kumar ◽

Ekta Goel ◽

Kunal Singh ◽

Balraj Singh ◽

Prince Kumar Singh ◽

...

Keyword(s):

Analytical Modeling ◽

Double Gate ◽

Electrical Characteristics ◽

Oxide Structure ◽

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A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.3283 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3283-3290 ◽

Author(s):

Te-Kuang Chiang ◽

Mei-Li Chen

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

Short Channel ◽

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Double Gate PbS Quantum Dot Field-Effect Transistors for Tuneable Electrical Characteristics

Advanced Electronic Materials ◽

10.1002/aelm.201500467 ◽

2016 ◽

Vol 2 (4) ◽

pp. 1500467 ◽

Author(s):

Artem G. Shulga ◽

Laura Piveteau ◽

Satria Z. Bisri ◽

Maksym V. Kovalenko ◽

Maria A. Loi

Keyword(s):

Quantum Dot ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Electrical Characteristics ◽

Pbs Quantum Dot

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Ferro-electric stacked gate oxide heterojunction electro-statically doped source/drain double-gate tunnel field effect transistors: A superior structure

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2017.07.014 ◽

2017 ◽

Vol 71 ◽

pp. 161-165 ◽

Author(s):

Balraj Singh ◽

Trailokya Nath Rai ◽

Deepti Gola ◽

Kunal Singh ◽

Ekta Goel ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

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Use of negative capacitance to simulate the electrical characteristics in double-gate ferroelectric field-effect transistors

Current Applied Physics ◽

10.1016/j.cap.2012.05.008 ◽

2012 ◽

Vol 12 (6) ◽

pp. 1591-1595 ◽

Author(s):

Y.G. Xiao ◽

M.H. Tang ◽

Y. Xiong ◽

J.C. Li ◽

C.P. Cheng ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Negative Capacitance ◽

Double Gate ◽

Electrical Characteristics

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The influence of ferroelectric–electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors

Microelectronics Reliability ◽

10.1016/j.microrel.2011.11.006 ◽

2012 ◽

Vol 52 (4) ◽

pp. 757-760 ◽

Author(s):

Yongguang Xiao ◽

Minghua Tang ◽

Jiancheng Li ◽

Bo Jiang ◽

John He

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Interface Layer ◽

Negative Capacitance ◽

Double Gate ◽

Electrical Characteristics ◽

Electrode Interface

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A Quasi-Analytical Model for Double-Gate Tunneling Field-Effect Transistors

IEEE Electron Device Letters ◽

10.1109/led.2012.2208933 ◽

2012 ◽

Vol 33 (10) ◽

pp. 1468-1470 ◽

Author(s):

Andrew Pan ◽

Chi On Chui

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Tunneling Field Effect Transistors ◽

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Analytical model for threshold voltage of double gate bilayer graphene field effect transistors

Microelectronics Reliability ◽

10.1016/j.microrel.2013.08.003 ◽

2014 ◽

Vol 54 (1) ◽

pp. 44-48 ◽

Author(s):

M. Saeidmanesh ◽

M. Rahmani ◽

H. Karimi ◽

M. Khaledian ◽

Razali Ismail

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Bilayer Graphene ◽

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A New Two-Dimensional Analytical Model for Nanoscale Symmetrical Tri-Material Gate Stack Double Gate Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.104503 ◽

2009 ◽

Vol 48 (10) ◽

pp. 104503 ◽

Author(s):

Mei-Li Chen ◽

Wen-Kai Lin ◽

Shih-Fang Chen

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

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