A layer of nano amorphous carbon was fabricated on the target substrate by precisely controlled magnetron sputtering, and then a layer of copper film was fabricated on the amorphous carbon. By using a vertical cold wall chemical vapor deposition system under protective atmosphere, the
carbon atoms at high temperature was catalyzed by copper to form graphene films. The amorphous carbon nano thin film was converted into monolayer graphene on a SiO2 substrate directly. The experimental results show that the graphene film has high crystal quality and conductivity.
Compared with other methods, the process is simple and the process window is wider. By virtue of this technique, a graphene-Si photodetector was also demonstrated. The photoelectric response and frequency characteristics have been studied which shows good device characteristics.
Контролируемый синтез графена на меди с использованием метода имплантации атомов отдачи углерода