Graphene Directly Growth on Non-Metal Substrate from Amorphous Carbon Nano Films Without Transfer and Its Application in Photodetector

2021 ◽  
Vol 13 (4) ◽  
pp. 574-582
Author(s):  
Kun Xu ◽  
Pei Ding ◽  
Yan Li ◽  
Leiming Chen ◽  
Junwei Xu ◽  
...  

A layer of nano amorphous carbon was fabricated on the target substrate by precisely controlled magnetron sputtering, and then a layer of copper film was fabricated on the amorphous carbon. By using a vertical cold wall chemical vapor deposition system under protective atmosphere, the carbon atoms at high temperature was catalyzed by copper to form graphene films. The amorphous carbon nano thin film was converted into monolayer graphene on a SiO2 substrate directly. The experimental results show that the graphene film has high crystal quality and conductivity. Compared with other methods, the process is simple and the process window is wider. By virtue of this technique, a graphene-Si photodetector was also demonstrated. The photoelectric response and frequency characteristics have been studied which shows good device characteristics.

2019 ◽  
Vol 5 (3) ◽  
pp. 463-470 ◽  
Author(s):  
Changqing Shen ◽  
Xingzhou Yan ◽  
Fangzhu Qing ◽  
Xiaobin Niu ◽  
Richard Stehle ◽  
...  

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2235
Author(s):  
Otto Zietz ◽  
Samuel Olson ◽  
Brendan Coyne ◽  
Yilian Liu ◽  
Jun Jiao

To develop a synthesis technique providing enhanced control of graphene film quality and uniformity, a systematic characterization and manipulation of hydrocarbon precursors generated during plasma enhanced chemical vapor deposition of graphene is presented. Remote ionization of acetylene is observed to generate a variety of neutral and ionized hydrocarbon precursors, while in situ manipulation of the size and reactivity of carbon species permitted to interact with the growth catalyst enables control of the resultant graphene morphology. Selective screening of high energy hydrocarbon ions coupled with a multistage bias growth regime results in the production of 90% few-to-monolayer graphene on 50 nm Ni/Cu alloy catalysts at 500 °C. Additionally, synthesis with low power secondary ionization processes is performed and reveals further control during the growth, enabling a 50% reduction in average defect densities throughout the film. Mass spectrometry and UV-Vis spectroscopy monitoring of the reaction environment in conjunction with Raman characterization of the synthesized graphene films facilitates correlation of the carbon species permitted to reach the catalyst surface to the ultimate quality, layer number, and uniformity of the graphene film. These findings reveal a robust technique to control graphene synthesis pathways during plasma enhanced chemical vapor deposition.


2013 ◽  
Vol 774-776 ◽  
pp. 634-639
Author(s):  
Peng Fei Zhao ◽  
Da Wei He ◽  
Yong Sheng Wang ◽  
Ming Fu ◽  
Hong Peng Wu ◽  
...  

We optimized the CH4 and H2 gas flow rate of chemical vapor deposition (CVD) graphene growth and obtained larger area, fewer-layered graphene grown on Cu foils. After transfering to SiO2 substrate by PMMA more than 3 times to repair the defect of monolayer graphene film, we synthesized large area, transparent and continuous graphene film. The morphology and structure were characterized by SEM and Raman spectroscopy. Analysis of electrical properties and optical properties show that we obtained low resistance and high transparency of ~90%, which could be used on photoelectric device as solar cell and acceptable for replacing commercial ITO electrodes.


2015 ◽  
Vol 815 ◽  
pp. 18-21
Author(s):  
Tao Huang ◽  
Lin Chen ◽  
Qing Qing Sun ◽  
Peng Zhou ◽  
David Wei Zhang

Graphene is a novel two dimensional material with exceptional properties. Chemical vapor deposition of graphene on metal substrates is widely used to prepare high quality graphene film. However, the graphene films need to be transferred to oxide substrates for device applications. A chemical vapor deposition approach for direct growth of graphene films on zinc oxide was demonstrated in the present investigation. Raman spectra were used to characterize the grown graphene films. The impact of the growth temperature, time and gas flow ratio on the layer number and crystallite size of graphene was investigated.


2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.


Author(s):  
Marcelo Lopes Pereira Junior ◽  
Wiliam Ferreira da Cunha ◽  
Douglas Soares Galvão ◽  
Luiz Antonio Ribeiro Junior

Recently, laser-assisted chemical vapor deposition has been used to synthesize a free-standing, continuous, and stable monolayer amorphous carbon (MAC).


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